Beyond 110 GHz Uni-Traveling Carrier Photodiodes on an InP-Membrane-on-Silicon Platform
Jasper de Graaf,Xinran Zhao,Dimitrios Konstantinou,Menno van den Hout,Sander Reniers,Longfei Shen,Sjoerd van der Heide,Simon Rommel,Idelfonso Tafur Monroy,Chigo Okonkwo,Zizheng Cao,Ton Koonen,Kevin Williams,Yuqing Jiao
DOI: https://doi.org/10.1109/jstqe.2021.3110411
IF: 4.9
2022-03-01
IEEE Journal of Selected Topics in Quantum Electronics
Abstract:In this work we have demonstrated a waveguide integrated uni-traveling carrier photodiode on an InP-membrane-on-silicon platform with 3 dB bandwidth beyond 110 GHz. With design optimization and an improved process, devices as small as $ ext{3} imes ext{2};mu ext{m}^2$ are successfully realized. An electrical equivalent circuit model based on measured S-parameters revealed ultra-small series resistance and junction capacitance as low as 6.5 $Omega$ and 4.4 fF, respectively, in the diodes. The model also provided insight in the photocurrent dependent characteristics in the bandwidth and resonsivity of the devices. Finally, data transmission measurements are demonstrated, showcasing the high speed telecommunication abilities of the UTC-PD.
engineering, electrical & electronic,optics,physics, applied,quantum science & technology