Abstract:Due to the exceptional transmission property of optical fiber and the development of high-performance optoelectronic components, microwave photonic links have been used in many applications, including radio-over-fiber systems, optical beam forming and optical signal processing. To reduce insertion loss and enhance dynamic range in the microwave photonic links, it is crucial to implement high-power and high-linearity photodiodes. A promising candidate for this application is the uni-travelling-carrier photodiode (UTC-PD), which mitigates the space charge effect by using electrons as the only active carrier, thereby increasing the saturation current. In this work, an InGaAs/InP modified UTC-PD (MUTC-PD) is simulated, fabricated and characterized. The MUTC-PD electrostatics are first calculated using Synopsys Sentaurus TCAD, which provides insight and illustrates the device saturation mechanism (i.e. space charge effect). It is also found that a “cliff layer” (e.g. lightly-doped InP layer inserted between the absorption and collection layer) helps suppress the space charge effect under high-illumination conditions and improves the device high power handling capability. An InGaAs/InP MUTC-PD epitaxial structure grown by MOCVD has also been processed into a frontside-illuminated photodiode by using optical lithography, wet and dry etch processes, dielectric planarization and metallization. The performance of these fabricated photodiodes were evaluated by measuring dark current, responsivity and bandwidth. Finally, the device’s thermal behavior has been explored by way of MATLAB simulation. Since thermal heating limits the photodiode ultimate high-power performance, different thermal management strategies, like wafer transfer and heat sink, have been simulated and are compared.

Bandwidth improvement of high power uni-traveling-carrier photodiodes by reducing the series resistance and capacitance

Back-illuminated Modified Uni-Traveling-carrier Photo-Diodes (Mutc-Pds) with 3-Db Bandwidth over 40 GHz

High-Power, Wide-Bandwidth Modified Uni-Traveling-Carrier Photodiodes with an Optimized Depletion Region

150 GHz Bandwidth Modified Uni-traveling-carrier Photodiodes with 2.45 Dbm Saturation Output Power

Back-To-Back Utc-Pds with High Responsivity, High Saturation Current and Wide Bandwidth

Bandwidth Optimization and Fabrication of High-Power MUTC-PD

Study on the Saturation Characteristics of High-Speed Uni-Traveling-carrier Photodiodes Based on Field Screening Analysis

High-Speed and High-Responsivity InP-Based Uni-Traveling-Carrier Photodiodes

Analysis of Frequency Response of High Power MUTC Photodiodes Based on Photocurrent-Dependent Equivalent Circuit Model

Ultrafast MUTC Photodiodes over 200 GHz with High Saturation Power.

An 850 Nm InGaAs Modified Uni-Traveling-Carrier Photodiode Enhanced by Distributed Bragg Reflector

Design and optimization of MUTC photodiode performance under high-power operating conditions

High Bandwidth Surface-Illuminated Ingaas/Inp Uni-Travelling- Carrier Photodetector

Ultra-fast Waveguide MUTC Photodiodes over 220 GHz

High-Performance Inverted Evanescently-coupledWaveguide Integrated MUTC-PD with High Responsespeed

High-Saturation-Current Modified Uni-Traveling-Carrier Photodiode With Cliff Layer

D-Band MUTC Photodiodes with Flat Frequency Response

InGaAs/InP Modified Uni-Travelling-Carrier Photodiode with a Cliff Layer

Ultrafast MUTC Photodiodes with 230 GHz Bandwidth

High-power high-linearity flip-chip bonded modified uni-traveling carrier photodiode.

190 GHz Bandwidth Modified Uni-Traveling Carrier Photodiodes with High Saturation Power.