Novel back-to-back uni-traveling-carrier photodiodes with high responsivity and wide bandwidth

Tuo Shi,Bing Xiong,Changzheng Sun,Yi Luo

DOI: https://doi.org/10.1364/ofc.2013.ow3j.2

2013-01-01

Abstract:Novel back-to-back uni-traveling-carrier photodiodes are proposed and demonstrated. High responsivity of 0.83 A/W and wide bandwidth over 40 GHz are realized simultaneously in mesa-structure photodiodes for the first time. © 2013 OSA.

What problem does this paper attempt to address?

Integrated Uni-Traveling-Carrier Photodiodes with High Responsivity and Wide Bandwidth for Microwave Photonics

changzheng sun,bing xiong,yi luo

DOI: https://doi.org/10.1364/acpc.2014.af3a.3

2014-01-01

Abstract:Back-to-back integrated uni-traveling-carrier photodiodes with high responsivity of 0.83 A/W and wide electric bandwidth over 40 GHz are realized. Resonant cavity-enhanced uni-travelling-carrier photodiodes are optimized for high responsivity and wide optical bandwidth over 20 nm.
Back-To-Back Utc-Pds with High Responsivity, High Saturation Current and Wide Bandwidth

Tuo Shi,Bing Xiong,Changzheng Sun,Yi Luo

DOI: https://doi.org/10.1109/lpt.2012.2229703

IF: 2.6

2013-01-01

IEEE Photonics Technology Letters

Abstract:A novel back-illuminated mesa-structure back-to-back uni-traveling-carrier photodiode (UTC-PD) is proposed and realized. By stacking two UTC-PDs to form a PINIP structure, high responsivity, high output saturation power, and wide bandwidth are achieved simultaneously. The responsivity of a 24-mu m-diameter device is as high as 0.86 A/W, and a 3-dB bandwidth up to 28.3 GHz is attained. The saturation current up to 62 mA at 1-dB compression point is demonstrated at the frequency of 24 GHz.
Back-illuminated Modified Uni-Traveling-carrier Photo-Diodes (Mutc-Pds) with 3-Db Bandwidth over 40 GHz

Zheng Zhen,Ran Hao,Dong Xing,Zhihong Feng,Shangzhong Jin,Erping Li

DOI: https://doi.org/10.1117/12.2585422

2020-01-01

Abstract:InP-based back-illuminated modified uni-traveling-carrier photodiodes (MUTC-PDs) with high-speed and high-responsivity are demonstrated using flip-chip technology in this letter. The partially depleted absorption layer with gradual doping and cliff layer are utilized to realize large 3-dB bandwidth. A high responsivity of 0.54 A/W with over 40 GHz large 3-dB bandwidth from a 7-mu m-diameter back-illuminated MUTC-PD is achieved. The results demonstrate that the modified design can effectively enhance the internal electric field and concentration gradient, so as to optimize the response speed of the device.
Double-cliff-layer Uni-Traveling-carrier Photodiode with High Responsivity and Ultra-Broad Bandwidth

Yaru Han,Yuxin Tian,Bing Xiong,Changzheng Sun,Jian Wang,Zhibiao Hao,Yanjun Han,Lai Wang,Hongtao Li,Lin Gan,Yi Luo

DOI: https://doi.org/10.3788/col202422.052501

IF: 2.56

2024-01-01

Chinese Optics Letters

Abstract:A novel backside-illuminated double-cliff-layer uni-traveling-carrier[DCL-UTC]photodiode with both high responsivity and ultra-broad bandwidth is designed and demonstrated.A thick absorption layer is adopted for high responsivity,and a depletion region with double cliff layers is proposed to alleviate the space charge effect and maintain overshoot electron velocity under large photocurrents.In addition,inductive coplanar waveguide electrodes are employed to enhance the frequency response performance.The 6-pm-diameter photodiode exhibits a high responsivity of 0.51 A/W and a large 3-dB bandwidth of 102 GHz.A high RF output power of 2.7 dBm is recorded at 100 GHz.
Evanescently Coupled Waveguide Uni-Travelling Carrier Photodiodes with Wide Bandwidth and High Responsivity

Mingwei Sun,Bing Xiong,Changzheng Sun,Zhibiao Hao,Jian Wang,Lai Wang,Yanjun Han,Hongtao Li,Lin Gan,Yi Luo

DOI: https://doi.org/10.1364/cleo_si.2024.sm1l.6

2024-01-01

Abstract:Evanescently coupled waveguide uni-travelling carrier photodiodes utilizing multi-layer coupling waveguide structure has been proposed. Wide bandwidth of 120 GHz and high responsivity of 0.50 A/W at −1 V bias have been demonstrated without spot-size converters.
Plasmonic Resonance-Enhanced Low Dark Current and High-Speed InP/InGaAs Uni-Traveling-Carrier Photodiode

Bojian Zhang,Yingjian Liu,Kai Jiang,Fangli Wang,Muyi Yang,Songpo Guo,Zhengfu Han,Liang Wang

DOI: https://doi.org/10.1021/acsaelm.2c01052

IF: 4.494

2022-09-23

ACS Applied Electronic Materials

Abstract:High-speed and high-efficiency photodiodes are especially beneficial for exponential data communication traffic growth. However, improving high responsivity while maintaining low dark current and high bandwidth remains a challenge for vertical detector design. This study proposes a plasmonic InP/InGaAs uni-traveling-carrier photodiode with optical antenna arrays, which exhibits a low dark current of 2.52 nA at a −3 V bias voltage, a high bandwidth of over 40 GHz, and a high responsivity of 0.12 A/W. The absorption efficiency of the photodiode shows 2-fold improvement using plasmonic resonance generated by nanodisks at 1550 nm. This work designs a low dark current and high-bandwidth photodiode with improved responsivity, which provides a potential method for high-speed vertical photodiode design.

materials science, multidisciplinary,engineering, electrical & electronic
High Overall Performance Uni-Traveling Carrier Photodiodes for Sub-Thz Wave Generation

Jianwei Chen,Ran Hao,Zheng Zhen,Huaqing Jiang,Kaida Tang,Chenyuan Chen,Shangzhong Jin

DOI: https://doi.org/10.1364/ao.481495

IF: 1.9

2023-01-01

Applied Optics

Abstract:Modified near-ballistic uni-traveling-carrier photodiodes with improved overall performances were studied theoretically and experimentally. A bandwidth up to 0.2 THz with a 3 dB bandwidth of 136 GHz and large output power of 8.22 dBm (99 GHz) under the −2V bias voltage were obtained. The device exhibits good linearity in the photocurrent-optical power curve even at large input optical power, with a responsivity of 0.206 A/W. Physical explanations for the improved performances have been made in detail. The absorption layer and the collector layer were optimized to retain a high built-in electric field around the interface, which not only ensures the smoothness of the band structure but also facilitates the near-ballistic transmission of uni-traveling carriers. The obtained results may find potential applications in future high-speed optical communication chips and high-performance terahertz sources.
Ultrafast Modified Uni-Traveling Carrier Photodiode with 3-Db Bandwidth of 150 GHz

Enfei Chao,Bing Xiong,Changzheng Sun,Zhibiao Hao,Jian Wang,Lai Wang,Yanjun Han,Hongtao Li,Jiadong Yu,Yi Luo

DOI: https://doi.org/10.1364/cleo_si.2021.sm1d.3

2021-01-01

Abstract:Ultrafast modified uni-traveling carrier photodiodes are designed based on a comprehensive model. The 3-dB bandwidths of fabricated devices with 4.5- and 6.5-μm diameters are 150 GHz and 110 GHz, respectively, in agreement with our simulations.
Plasmonic Uni-Traveling-carrier Photodiode

Bojian Zhang,Liang Wang

DOI: https://doi.org/10.1117/12.2577098

2021-01-01

Abstract:The high-speed photodetector represented by uni-traveling-carrier photodiode is developing towards a higher bandwidth design. The high-bandwidth design will be constrained by the reduced responsivity of the device. Plasmonic photodetectors, due to their ability to confine light at the surface of the metal, can perform light-matter interaction with absorbing materials on a deep subwavelength scale, which providing a new design direction for higher speed photodetectors. We report a high-speed photodetector design that combines uni-traveling-carrier photodiode and plasmonic resonance to achieve a two-fold improvement in device responsivity. The results reveal that plasmonic uni-traveling-carrier photodiode is a potential choice for high-speed photodetector design.
Dual-drifting-layer Uni-Traveling Carrier Photodiode for Wide Bandwidth and High Power Performance

Jin Li,Bing Xiong,Changzheng Sun,Yi Luo

DOI: https://doi.org/10.1364/cleo_si.2015.sth1i.8

2015-01-01

Abstract:Uni-traveling-carrier photodiodes with novel dual-drifting-layer structure is proposed to realize wide bandwidth and high saturation power performance. High-speed operation at high bias voltage is demonstrated by optimizing the electric field profile within the dual-drifting-layer structure.
High-Power Monolithically Integrated Traveling Wave Photodiode Array

Andreas Beling,Hao Chen,Huapu Pan,Joe C. Campbell

DOI: https://doi.org/10.1109/LPT.2009.2033817

IF: 2.6

2009-01-01

IEEE Photonics Technology Letters

Abstract:A novel traveling wave photodiode array (TWPDA) based on back-illuminated InGaAs-InP charge compensated modified uni-traveling carrier photodiodes is demonstrated. A two-element TWPDA with integrated termination resistor has a responsivity of 0.55 A/W and bandwidth of 17 GHz. The saturation photocurrent and the available electrical output power are 114 mA and + 13 dBm at - 3.5-V bias voltage, resp...
Nearly-Ballistic Optimization Design of High-Speed Uni-Traveling-Carrier Photodiodes

Zhen Zheng,Hao Ran,Xing Dong,Feng Zhihong,Jin Shangzhong

DOI: https://doi.org/10.3788/cjl202047.1006003

2020-01-01

Chinese Journal of Lasers

Abstract:Based on the nearly-ballistic optimization method, a high performance uni-traveling-carrier photodiode (UTC-PD) design scheme is proposed in this paper. The UTC-PD prepared by this scheme has high response speed, high responsivity, and large saturation output, and can alleviate the load voltage swing effect. The designed novel photodiode uses a partially depleted absorption layer with gradient doping. A thin p-type doped charge layer is inserted at the bottom of the collection layer. The internal electric field of the device is optimized to make the photogenerated electrons drift at the overshoot speed, reduce the electron transit time, make the device have high bias voltage operation ability, and therefore increase the 3 dB bandwidth and improve the saturation performance. Simulation results show that under the condition of high reverse bias voltage of 8 V, the device with an active area of 16 mu m(2) can obtain a 3 dB bandwidth exceeding 86 GHz with a responsivity of 0.17 A/W.
190 GHz Bandwidth Modified Uni-Traveling Carrier Photodiodes with High Saturation Power.

Yuxin Tian,Bing Xiong,Changzheng Sun,Zhibiao Hao,Jian Wang,Lai Wang,Yanjun Han,Hongtao Li,Lin Gan,Yi Luo

DOI: https://doi.org/10.1364/ofc.2023.w1a.4

2023-01-01

Abstract:Back-illuminated modified uni-traveling carrier photodiodes with improved saturation performance at ultra-high frequencies are developed. The 4-µm-diameter PD exhibits a 3-dB bandwidth of 190 GHz with a saturation power of ‐1.21 dBm@190 GHz.
High-responsivity vertical-illumination Si/Ge uni-traveling-carrier photodiodes based on silicon-on-insulator substrate

Chong Li,ChunLai Xue,Zhi Liu,Hui Cong,Buwen Cheng,Xia Guo,Wuming Liu

DOI: https://doi.org/10.48550/arXiv.1511.05593

2015-11-16

Abstract:Si/Ge uni-traveling carrier photodiodes exhibit higher output current when space-charge effects are overcome and thermal effects are suppressed, which is highly beneficial for increasing the dynamic range of various microwave photonic systems and simplifying high-bit-rate digital receivers in different applications. From the point of view of packaging, detectors with vertical-illumination configuration can be easily handled by pick-and-place tools and are a popular choice for making photo-receiver modules. However, vertical-illumination Si/Ge uni-traveling carrier (UTC) devices suffer from inter-constraint between high speed and high responsivity. Here, we report a high responsivity vertical-illumination Si/Ge UTC photodiode based on a silicon-on-insulator substrate. The maximum absorption efficiency of the devices was 2.4 times greater than the silicon substrate owing to constructive interference. The Si/Ge UTC photodiode was successfully fabricated and had a dominant responsivity at 1550 nm of 0.18 A/W, a 50% improvement even with a 25% thinner Ge absorption layer.

Instrumentation and Detectors,Materials Science,Optics
Ultra-Wide Bandwidth and High Saturation Power Uni-Traveling Carrier Photodiodes

Bing Xiong,Yuxin Tian,Changzheng Sun,Zhibiao Hao,Jian Wang,Lai Wang,Yanjun Han,Hongtao Li,Lin Gan,Yi Luo

DOI: https://doi.org/10.1364/ofc.2024.tu3d.4

2024-01-01

Abstract:In this talk, we present our recent work on ultra-wide bandwidth (>100 GHz) uni-traveling-carrier photodetectors with high saturation power, by optimizing the photogenerated carrier transport and taking advantage of the inductive gain peaking effect.
Beyond 110 GHz Uni-Traveling Carrier Photodiodes on an InP-Membrane-on-Silicon Platform

Jasper de Graaf,Xinran Zhao,Dimitrios Konstantinou,Menno van den Hout,Sander Reniers,Longfei Shen,Sjoerd van der Heide,Simon Rommel,Idelfonso Tafur Monroy,Chigo Okonkwo,Zizheng Cao,Ton Koonen,Kevin Williams,Yuqing Jiao

DOI: https://doi.org/10.1109/jstqe.2021.3110411

IF: 4.9

2022-03-01

IEEE Journal of Selected Topics in Quantum Electronics

Abstract:In this work we have demonstrated a waveguide integrated uni-traveling carrier photodiode on an InP-membrane-on-silicon platform with 3 dB bandwidth beyond 110 GHz. With design optimization and an improved process, devices as small as $ ext{3} imes ext{2};mu ext{m}^2$ are successfully realized. An electrical equivalent circuit model based on measured S-parameters revealed ultra-small series resistance and junction capacitance as low as 6.5 $Omega$ and 4.4 fF, respectively, in the diodes. The model also provided insight in the photocurrent dependent characteristics in the bandwidth and resonsivity of the devices. Finally, data transmission measurements are demonstrated, showcasing the high speed telecommunication abilities of the UTC-PD.

engineering, electrical & electronic,optics,physics, applied,quantum science & technology
Bandwidth improvement of high power uni-traveling-carrier photodiodes by reducing the series resistance and capacitance

Jin Li,Bing Xiong,Chang-Zheng Sun,Yi Luo,Jian Wang,Zhi-Biao Hao,Yan-Jun Han,Lai Wang,Hong-Tao Li

DOI: https://doi.org/10.1088/1674-1056/24/7/078503

2015-06-25

Chinese Physics B

Abstract:A backside illuminated mesa-structure InGaAs/InP modified uni-traveling-carrier photodiode (MUTC-PD) with wide bandwidth and high saturation power is fabricated and investigated. The device structure is optimized to reduce the capacitance and resistance. For the 22-μm-diameter device, the maximum responsivity at 1.55 μm is 0.5 A/W, and the 3-dB cutoff frequency reaches up to 28 GHz. The output photocurrent at the 1-dB compression point is measured to be 54 mA at 25 GHz, with a corresponding output radio frequency (RF) power of up to 15.5 dBm. The saturation characteristics of the MUTC-PD are also verified by the electric field simulation, and electric field collapse is found to be the cause of the saturation phenomenon.

physics, multidisciplinary
High-Power, Wide-Bandwidth Modified Uni-Traveling-Carrier Photodiodes with an Optimized Depletion Region

Jin Li,Bing Xiong,Yi Luo,Changzheng Sun,Zhibiao Hao,Jian Wang,Yanjun Han,Lai Wang,Hongtao Li

DOI: https://doi.org/10.7567/apex.9.052203

IF: 2.819

2016-01-01

Applied Physics Express

Abstract:A modified uni-traveling-carrier photodiode (MUTC-PD) with an optimized depletion region is fabricated and its saturation characteristics are investigated. The space-charge effect is effectively suppressed by inserting a carefully designed cliff layer in the middle of the depletion region. The 22-µm-diameter device exhibits a bandwidth of 28 GHz. Compared with our previous work, the saturation photocurrent of the novel device is increased from 55 to 99 mA, and the corresponding RF power is increased from 15.5 to 20.1 dBm. Furthermore, a 12-µm-diameter device with a bandwidth of 50 GHz is demonstrated, together with a saturation photocurrent of 61 mA, corresponding to an RF power of 15.3 dBm.
Structure Optimization of Resonant Cavity-Enhanced Uni-Travelling Carrier Photodiode for High Quantum Efficiency and Wide Optical Bandwidth

Di Miao,Bing Xiong,Changzheng Sun,Yi Luo

DOI: https://doi.org/10.1364/ACPC.2014.ATh3A.51

2014-01-01

Abstract:Resonant cavity-enhanced uni-travelling carrier photodiode structure with optimized distributed Bragg reflector (DBR) mirror and absorber-layer was proposed. The device is expected to achieve high quantum efficiency of 89% and wide optical bandwidth of 23 nm.
Ultrafast Dual-Drifting Layer Uni-Traveling Carrier Photodiode with High Saturation Current

Jin Li,Bing Xiong,Yi Luo,Changzheng Sun,Jian Wang,Zhibiao Hao,Yanjun Han,Lai Wang,Hongtao Li

DOI: https://doi.org/10.1364/oe.24.008420

IF: 3.8

2016-01-01

Optics Express

Abstract:A novel backside-illuminated mesa-structure dual-drifting layer (DDL) uni-traveling-carrier photodiode (UTC-PD) is reported to demonstrate high-power performance at sub-THz frequencies. The DDL structure consists of a velocity overshoot layer and a velocity saturation layer, formed by inserting a 20 nm p-type cliff layer into the thick depletion region. In the overshoot layer, photo-generated electrons drift at overshoot velocity under the carefully designed electric field profile, thus resulting in a short electron transit time. The saturation layer serves as a voltage sacrificing layer to enable high bias voltage operation, which leads to alleviated load voltage swing effect, as well as improved saturation performance. Our DDL UTC-PD exhibits a 3-dB bandwidth of 106 GHz with a responsivity of 0.17 A/W under a wide bias voltage range from 4 to 8 V. The photocurrent reaches up to 28 mA, corresponding to an output power of 7.3 dBm at 105 GHz.

Novel back-to-back uni-traveling-carrier photodiodes with high responsivity and wide bandwidth

Integrated Uni-Traveling-Carrier Photodiodes with High Responsivity and Wide Bandwidth for Microwave Photonics

Back-To-Back Utc-Pds with High Responsivity, High Saturation Current and Wide Bandwidth

Back-illuminated Modified Uni-Traveling-carrier Photo-Diodes (Mutc-Pds) with 3-Db Bandwidth over 40 GHz

Double-cliff-layer Uni-Traveling-carrier Photodiode with High Responsivity and Ultra-Broad Bandwidth

Evanescently Coupled Waveguide Uni-Travelling Carrier Photodiodes with Wide Bandwidth and High Responsivity

Plasmonic Resonance-Enhanced Low Dark Current and High-Speed InP/InGaAs Uni-Traveling-Carrier Photodiode

High Overall Performance Uni-Traveling Carrier Photodiodes for Sub-Thz Wave Generation

Ultrafast Modified Uni-Traveling Carrier Photodiode with 3-Db Bandwidth of 150 GHz

Plasmonic Uni-Traveling-carrier Photodiode

Dual-drifting-layer Uni-Traveling Carrier Photodiode for Wide Bandwidth and High Power Performance

High-Power Monolithically Integrated Traveling Wave Photodiode Array

Nearly-Ballistic Optimization Design of High-Speed Uni-Traveling-Carrier Photodiodes

190 GHz Bandwidth Modified Uni-Traveling Carrier Photodiodes with High Saturation Power.

High-responsivity vertical-illumination Si/Ge uni-traveling-carrier photodiodes based on silicon-on-insulator substrate

Ultra-Wide Bandwidth and High Saturation Power Uni-Traveling Carrier Photodiodes

Beyond 110 GHz Uni-Traveling Carrier Photodiodes on an InP-Membrane-on-Silicon Platform

Bandwidth improvement of high power uni-traveling-carrier photodiodes by reducing the series resistance and capacitance

High-Power, Wide-Bandwidth Modified Uni-Traveling-Carrier Photodiodes with an Optimized Depletion Region

Structure Optimization of Resonant Cavity-Enhanced Uni-Travelling Carrier Photodiode for High Quantum Efficiency and Wide Optical Bandwidth

Ultrafast Dual-Drifting Layer Uni-Traveling Carrier Photodiode with High Saturation Current