Abstract:Based on the nearly-ballistic optimization method, a high performance uni-traveling-carrier photodiode (UTC-PD) design scheme is proposed in this paper. The UTC-PD prepared by this scheme has high response speed, high responsivity, and large saturation output, and can alleviate the load voltage swing effect. The designed novel photodiode uses a partially depleted absorption layer with gradient doping. A thin p-type doped charge layer is inserted at the bottom of the collection layer. The internal electric field of the device is optimized to make the photogenerated electrons drift at the overshoot speed, reduce the electron transit time, make the device have high bias voltage operation ability, and therefore increase the 3 dB bandwidth and improve the saturation performance. Simulation results show that under the condition of high reverse bias voltage of 8 V, the device with an active area of 16 mu m(2) can obtain a 3 dB bandwidth exceeding 86 GHz with a responsivity of 0.17 A/W.

The Effect of Illumination Uniformity on the Saturation Characteristics of Photodiode

Study on the Saturation Characteristics of High-Speed Uni-Traveling-carrier Photodiodes Based on Field Screening Analysis

High-Power, Wide-Bandwidth Modified Uni-Traveling-Carrier Photodiodes with an Optimized Depletion Region

Bandwidth improvement of high power uni-traveling-carrier photodiodes by reducing the series resistance and capacitance

Depletion Region Optimization in UTC Photodiodes for High Speed and High Power Performance

150 GHz Bandwidth Modified Uni-traveling-carrier Photodiodes with 2.45 Dbm Saturation Output Power

Nearly-Ballistic Optimization Design of High-Speed Uni-Traveling-Carrier Photodiodes

Characterization and Optimization of InGaAs/InP Photodiodes with High Saturation Current

Back-illuminated Modified Uni-Traveling-carrier Photo-Diodes (Mutc-Pds) with 3-Db Bandwidth over 40 GHz

Analysis of Frequency Response of High Power MUTC Photodiodes Based on Photocurrent-Dependent Equivalent Circuit Model

Design and optimization of MUTC photodiode performance under high-power operating conditions

High-Saturation-Current Modified Uni-Traveling-Carrier Photodiode With Cliff Layer

UTC-PD's optoelectronic mixing principle and optimal working condition

Back-To-Back Utc-Pds with High Responsivity, High Saturation Current and Wide Bandwidth

Design of uni-traveling-carrier photodiode with nanoscale optical microstructures

Ultrafast MUTC Photodiodes over 200 GHz with High Saturation Power.

190 GHz Bandwidth Modified Uni-Traveling Carrier Photodiodes with High Saturation Power.

The Behavior of the Intermodulation Distortions of Modified Uni-Traveling Carrier Photodiodes Produced by Bias Modulation

Bandwidth Optimization and Fabrication of High-Power MUTC-PD

Characterization and optimization of high-power InGaAs/InP photodiodes

Ultra-Wide Bandwidth and High Saturation Power Uni-Traveling Carrier Photodiodes