Depletion Region Optimization in UTC Photodiodes for High Speed and High Power Performance

Jin Li,Bing Xiong,Changzheng Sun,Yi Luo,Jian Wang,Zhibiao Hao,Lai Wang,Yanjun Han,Hongtao Li

DOI: https://doi.org/10.1109/oecc.2015.7340226

2015-01-01

Abstract:Depletion region of uni-traveling-carrier photodiodes (UTC-PDs) is optimized. Wide bandwidth of 28.5 GHz and high saturation photocurrent of 38 mA at 20 GHz are achieved for a 14-μm diameter device.

What problem does this paper attempt to address?

High-Power, Wide-Bandwidth Modified Uni-Traveling-Carrier Photodiodes with an Optimized Depletion Region

Jin Li,Bing Xiong,Yi Luo,Changzheng Sun,Zhibiao Hao,Jian Wang,Yanjun Han,Lai Wang,Hongtao Li

DOI: https://doi.org/10.7567/apex.9.052203

IF: 2.819

2016-01-01

Applied Physics Express

Abstract:A modified uni-traveling-carrier photodiode (MUTC-PD) with an optimized depletion region is fabricated and its saturation characteristics are investigated. The space-charge effect is effectively suppressed by inserting a carefully designed cliff layer in the middle of the depletion region. The 22-µm-diameter device exhibits a bandwidth of 28 GHz. Compared with our previous work, the saturation photocurrent of the novel device is increased from 55 to 99 mA, and the corresponding RF power is increased from 15.5 to 20.1 dBm. Furthermore, a 12-µm-diameter device with a bandwidth of 50 GHz is demonstrated, together with a saturation photocurrent of 61 mA, corresponding to an RF power of 15.3 dBm.
Nearly-Ballistic Optimization Design of High-Speed Uni-Traveling-Carrier Photodiodes

Zhen Zheng,Hao Ran,Xing Dong,Feng Zhihong,Jin Shangzhong

DOI: https://doi.org/10.3788/cjl202047.1006003

2020-01-01

Chinese Journal of Lasers

Abstract:Based on the nearly-ballistic optimization method, a high performance uni-traveling-carrier photodiode (UTC-PD) design scheme is proposed in this paper. The UTC-PD prepared by this scheme has high response speed, high responsivity, and large saturation output, and can alleviate the load voltage swing effect. The designed novel photodiode uses a partially depleted absorption layer with gradient doping. A thin p-type doped charge layer is inserted at the bottom of the collection layer. The internal electric field of the device is optimized to make the photogenerated electrons drift at the overshoot speed, reduce the electron transit time, make the device have high bias voltage operation ability, and therefore increase the 3 dB bandwidth and improve the saturation performance. Simulation results show that under the condition of high reverse bias voltage of 8 V, the device with an active area of 16 mu m(2) can obtain a 3 dB bandwidth exceeding 86 GHz with a responsivity of 0.17 A/W.
Ultrafast MUTC Photodiodes over 200 GHz with High Saturation Power.

Yuxin Tian,Bing Xiong,Changzheng Sun,Zhibiao Hao,Jian Wang,Lai Wang,Yanjun Han,Hongtao Li,Lin Gan,Yi Luo

DOI: https://doi.org/10.1364/oe.491552

IF: 3.8

2023-01-01

Optics Express

Abstract:Novel back-illuminated modified uni-traveling-carrier photodiodes (MUTC-PDs) with wide bandwidth and high saturation power are demonstrated. The effect of cliff layer doping on the electric field distribution is investigated to achieve fast carrier transport. MUTC-PDs with miniaturized device diameter and low contact resistance are fabricated to improve the RC-limited bandwidth. Meanwhile, inductive peaking is implemented to further extend the bandwidth. PDs with 3-µm and 3.6-µm-diameter exhibit a ultrawide bandwidth of 230 GHz and 200 GHz, together with −4.94 dBm and −2.14 dBm saturation power at 220 GHz and 200 GHz, respectively.
Back-illuminated Modified Uni-Traveling-carrier Photo-Diodes (Mutc-Pds) with 3-Db Bandwidth over 40 GHz

Zheng Zhen,Ran Hao,Dong Xing,Zhihong Feng,Shangzhong Jin,Erping Li

DOI: https://doi.org/10.1117/12.2585422

2020-01-01

Abstract:InP-based back-illuminated modified uni-traveling-carrier photodiodes (MUTC-PDs) with high-speed and high-responsivity are demonstrated using flip-chip technology in this letter. The partially depleted absorption layer with gradual doping and cliff layer are utilized to realize large 3-dB bandwidth. A high responsivity of 0.54 A/W with over 40 GHz large 3-dB bandwidth from a 7-mu m-diameter back-illuminated MUTC-PD is achieved. The results demonstrate that the modified design can effectively enhance the internal electric field and concentration gradient, so as to optimize the response speed of the device.
Ultrafast MUTC Photodiodes with 230 GHz Bandwidth

Yuxin Tian,Bing Xiong,Changzheng Sun,Zhibiao Hao,Jian Wang,Lai Wang,Yanjun Han,Hongtao Li,Lin Gan,Yi Luo

DOI: https://doi.org/10.1109/OECC56963.2023.10209609

2023-01-01

Abstract:Novel back-illuminated modified uni-traveling-carrier photodiodes (MUTC-PDs) are designed to achieve ultrawide bandwidth. The fabricated 3-μm-diameter PDs demonstrate a 3-dB bandwidth of 230 GHz with a saturation power of −4.94 dBm @ 220 GHz.
150 GHz Bandwidth Modified Uni-traveling-carrier Photodiodes with 2.45 Dbm Saturation Output Power

Yuxin Tian,Bing Xiong,Changzheng Sun,Zhibiao Hao,Jian Wang,Lai Wang,Yanjun Han,Hongtao Li,Yi Luo

DOI: https://doi.org/10.1109/acp55869.2022.10088569

2022-01-01

Abstract:Back-illuminated modified uni-traveling-carrier photodiodes (MUTC-PDs) are optimized to achieve high power and wide bandwidth. The fabricated 6-μm-diameter PD demonstrates a 3-dB bandwidth of 150 GHz with a record-high saturation power of 2.45 dBm @ 150 GHz.
Bandwidth Optimization and Fabrication of High-Power MUTC-PD

Xuejie Wang,Yongqing Huang,Shuhu Tan,Jiawei Du,Mingxi Yang,Kai Liu,Xiaofeng Duan,Xiaomin Ren

DOI: https://doi.org/10.1109/jqe.2024.3367951

IF: 2.5

2024-03-09

IEEE Journal of Quantum Electronics

Abstract:A high-speed and high-power modified uni-traveling-carrier photodiode (MUTC-PD) is optimized and fabricated. The optimization method takes carrier transport as the core and considers the hole transport time limited bandwidth of the MUTC-PD for the first time. Taking into account the impact of the electron transport time and RC time constant on device performance, the device is simulated and fabricated. In structure epitaxy, it is proposed to use graded doping to fit Gaussian doping to reduce the epitaxial growth error. The measured bandwidth of the MUTC-PD reaches 34 GHz and the RF output power reaches 17.1 dBm with the mesa diameter of . In addition, the influence of modulation depth on high-speed and high-power performance is studied.

engineering, electrical & electronic,optics,physics, applied,quantum science & technology
Design and optimization of MUTC photodiode performance under high-power operating conditions

Xiaowei Yang,Xiaofeng Duan,Kai Liu,Yongqing Huang

DOI: https://doi.org/10.1364/ao.537191

IF: 1.9

2024-10-03

Applied Optics

Abstract:Xiaowei Yang, Xiaofeng Duan, Kai Liu, Yongqing Huang A high-bandwidth and high-power back-illuminated modified uni-traveling-carrier photodiode (MUTC-PD) with InGaAsP/InGaAs as the main ... [Appl. Opt. 63, 7644-7651 (2024)]

optics
Ultrafast Dual-Drifting Layer Uni-Traveling Carrier Photodiode with High Saturation Current

Jin Li,Bing Xiong,Yi Luo,Changzheng Sun,Jian Wang,Zhibiao Hao,Yanjun Han,Lai Wang,Hongtao Li

DOI: https://doi.org/10.1364/oe.24.008420

IF: 3.8

2016-01-01

Optics Express

Abstract:A novel backside-illuminated mesa-structure dual-drifting layer (DDL) uni-traveling-carrier photodiode (UTC-PD) is reported to demonstrate high-power performance at sub-THz frequencies. The DDL structure consists of a velocity overshoot layer and a velocity saturation layer, formed by inserting a 20 nm p-type cliff layer into the thick depletion region. In the overshoot layer, photo-generated electrons drift at overshoot velocity under the carefully designed electric field profile, thus resulting in a short electron transit time. The saturation layer serves as a voltage sacrificing layer to enable high bias voltage operation, which leads to alleviated load voltage swing effect, as well as improved saturation performance. Our DDL UTC-PD exhibits a 3-dB bandwidth of 106 GHz with a responsivity of 0.17 A/W under a wide bias voltage range from 4 to 8 V. The photocurrent reaches up to 28 mA, corresponding to an output power of 7.3 dBm at 105 GHz.
Back-To-Back Utc-Pds with High Responsivity, High Saturation Current and Wide Bandwidth

Tuo Shi,Bing Xiong,Changzheng Sun,Yi Luo

DOI: https://doi.org/10.1109/lpt.2012.2229703

IF: 2.6

2013-01-01

IEEE Photonics Technology Letters

Abstract:A novel back-illuminated mesa-structure back-to-back uni-traveling-carrier photodiode (UTC-PD) is proposed and realized. By stacking two UTC-PDs to form a PINIP structure, high responsivity, high output saturation power, and wide bandwidth are achieved simultaneously. The responsivity of a 24-mu m-diameter device is as high as 0.86 A/W, and a 3-dB bandwidth up to 28.3 GHz is attained. The saturation current up to 62 mA at 1-dB compression point is demonstrated at the frequency of 24 GHz.
Study on the Saturation Characteristics of High-Speed Uni-Traveling-carrier Photodiodes Based on Field Screening Analysis

Tuo Shi,Bing Xiong,Changzheng Sun,Yi Luo

DOI: https://doi.org/10.3788/col201109.082302

2011-01-01

Abstract:A back-illuminated mesa-structure InGaAs/InP charge-compensated uni-traveling-carrier (UTC) photodiode (PD) is fabricated, and its saturation characteristics are investigated. The responsivity of the 40-\mu m-diameter PD is as high as 0.83 A/W, and the direct current (DC) saturation current is up to 275 mA. The 1-dB compression point at the 3-dB cutoff frequency of 9 GHz is measured to be 100 mA, corresponding to an output radio frequency (RF) power of up to 20.1 dBm. According to the calculated electric field distributions in the depleted region under both DC and alternating current (AC) conditions, the saturation of the UTC-PD is caused by complete field screening at high optical injection levels.
Bandwidth improvement of high power uni-traveling-carrier photodiodes by reducing the series resistance and capacitance

Jin Li,Bing Xiong,Chang-Zheng Sun,Yi Luo,Jian Wang,Zhi-Biao Hao,Yan-Jun Han,Lai Wang,Hong-Tao Li

DOI: https://doi.org/10.1088/1674-1056/24/7/078503

2015-06-25

Chinese Physics B

Abstract:A backside illuminated mesa-structure InGaAs/InP modified uni-traveling-carrier photodiode (MUTC-PD) with wide bandwidth and high saturation power is fabricated and investigated. The device structure is optimized to reduce the capacitance and resistance. For the 22-μm-diameter device, the maximum responsivity at 1.55 μm is 0.5 A/W, and the 3-dB cutoff frequency reaches up to 28 GHz. The output photocurrent at the 1-dB compression point is measured to be 54 mA at 25 GHz, with a corresponding output radio frequency (RF) power of up to 15.5 dBm. The saturation characteristics of the MUTC-PD are also verified by the electric field simulation, and electric field collapse is found to be the cause of the saturation phenomenon.

physics, multidisciplinary
190 GHz Bandwidth Modified Uni-Traveling Carrier Photodiodes with High Saturation Power.

Yuxin Tian,Bing Xiong,Changzheng Sun,Zhibiao Hao,Jian Wang,Lai Wang,Yanjun Han,Hongtao Li,Lin Gan,Yi Luo

DOI: https://doi.org/10.1364/ofc.2023.w1a.4

2023-01-01

Abstract:Back-illuminated modified uni-traveling carrier photodiodes with improved saturation performance at ultra-high frequencies are developed. The 4-µm-diameter PD exhibits a 3-dB bandwidth of 190 GHz with a saturation power of ‐1.21 dBm@190 GHz.
Design Consideration of Uni-Traveling Carrier Photodiode: Influence of Doping Profile and Buffer Layer

Yang Li,Hang Zhou,Pengfei Xu,Yujie Chen,Yanfeng Zhang,Siyuan Yu

DOI: https://doi.org/10.1109/asicon.2015.7517156

2015-01-01

Abstract:Device modeling of InGaAs-InP-based uni-traveling carrier photodiode (UTC-PD) were performed in order to reveal the key parameters which affect the high speed performance of UTC-PD. Our simulations got 3dB bandwidth of 12.66GHz without interface effects and 3.59GHz with interface effects, respectively. On the other hand, step doping profile got a 3dB bandwidth of 21.4GHz, which is about 1.8 times larger than that of uniform doping. These indicate that both doping profile in the absorption layer and the defect at the interfacial buffer layer have remarkable influence on the performance of UTC-PD.
Ultra-Wide Bandwidth and High Saturation Power Uni-Traveling Carrier Photodiodes

Bing Xiong,Yuxin Tian,Changzheng Sun,Zhibiao Hao,Jian Wang,Lai Wang,Yanjun Han,Hongtao Li,Lin Gan,Yi Luo

DOI: https://doi.org/10.1364/ofc.2024.tu3d.4

2024-01-01

Abstract:In this talk, we present our recent work on ultra-wide bandwidth (>100 GHz) uni-traveling-carrier photodetectors with high saturation power, by optimizing the photogenerated carrier transport and taking advantage of the inductive gain peaking effect.
The Effect of Illumination Uniformity on the Saturation Characteristics of Photodiode

Xiuqi Zhang,Yanjun Han,Bing Xiong,Hongtao Li,Yi Luo,Changzheng Sun,Jian Wang,Zhibiao Hao,Lai Wang

DOI: https://doi.org/10.1109/acp55869.2022.10088579

2022-01-01

Abstract:The saturation characteristics of modified uni-traveling-carrier photodiode (MUTC-PD) is optimized by improving the illumination uniformity. The saturation photocurrent of the device at 20 GHz increases from 15 mA to 60 mA under 5 V reverse bias, at the cost of a decrease in optical coupling efficiency by about 25%. The experimental results are in fair agreement with simulations of electric field variation inside the PD under different illumination uniformity.
Ultra-fast Waveguide MUTC Photodiodes over 220 GHz

Linze Li,Luyu Wang,Tianyu Long,Zhouze Zhang,Juanjuan Lu,Baile Chen

2024-02-12

Abstract:We present InP-based evanescently-coupled waveguide modified uni-traveling carrier photodiodes (MUTC-PDs) exhibiting a breakthrough in bandwidth. The optimization of carrier transport and optical coupling is achieved through a detailed discussion on the design of the cliff layer and waveguide layer. Addressing the parasitic capacitance challenge, we introduce benzocyclobutene (BCB) beneath the PD electrodes, effectively overcoming the bandwidth bottleneck associated with the RC time constant. Devices with sizes of 2 * 7 um2 and 2 * 10 um2 achieve 3-dB bandwidths over 220 GHz, along with external responsivities of 0.161 A/W and 0.237 A/W, respectively. Notably, the RF output power reaches a peak of -1.69 dBm at 215 GHz for 2 * 15 um2 PDs.

Applied Physics,Optics
Research on Ultra-Wideband and High Saturation Power Uni-Traveling Carrier Photodetectors(invited)

Xiong Bing,Chao Enfei,Luo Yi,Sun Changzheng,Han Yanjun,Wang Jian,Hao Zhibiao,Wang Lai,Li Hongtao

DOI: https://doi.org/10.3788/irla20211052

2021-01-01

Infrared and Laser Engineering

Abstract:Ultra-wideband uni-traveling carrier (UTC) photodetectors have broadband advantages over traditional PIN detectors, as only fast electrons are required to transport in UTC photodetectors. They will be one of the key optoelectronic devices in the sub-terahertz systems, such as 6G broadband wireless communications, terahertz imaging, ultra-wideband noise generators, etc. For the requirements of optoelectronic conversion in sub-terahertz frequency band, high-speed photo-generated carrier transport mechanics and inductive coplanar waveguide (CPW) structure were studied to improve the device bandwidth and saturation power of the photodetector. A dual-drift layer structure MUTC photodetector chip with bandwidth of 106 GHz, saturated output power of 7.3 dBm, and a CPW-optimized MUTC photodetector chip with bandwidth over 150 GHz were developed.
Comprehensive Design Method of MUTC-PD for Terahertz Applications

Enfei Chao,Bing Xiong,Changzheng Sun,Zhibiao Hao,Jian Wang,Lai Wang,Yanjun Han,Hongtao Li,Jiadong Yu,Yi Luo

DOI: https://doi.org/10.1364/acpc.2020.m4a.150

2020-01-01

Abstract:A novel modified uni-traveling-carrier photodiode has been carefully designed by a comprehensive design method which includes a physically-based energy-balance model and an accurate circuit model. The simulated 3-dB bandwidth reaches 180 GHz for 3-mu m-diameter device. (C) 2020 The Author(s)
D-Band MUTC Photodiodes with Flat Frequency Response

Enfei Chao,Bing Xiong,Changzheng Sun,Zhibiao Hao,Jian Wang,Lai Wang,Yanjun Han,Hongtao Li,Jiadong Yu,Yi Luo

DOI: https://doi.org/10.1109/jstqe.2021.3115488

IF: 4.9

2021-01-01

IEEE Journal of Selected Topics in Quantum Electronics

Abstract:Novel back-illuminated modified uni-traveling- carrier photodiodes (MUTC-PDs) are reported to demonstrate wide bandwidth and high output power performance at D-band (110–170 GHz) regime. A comprehensive design model is employed to predict and tune the frequency response by incorporating coplanar waveguides (CPWs) with different inductive peaking effects. As a demonstration, 4.5-μm-diameter photodiodes with two types of CPWs are fabricated to exhibit different frequency response profiles. Both PDs exhibit a 3-dB bandwidth over 150 GHz and the measured frequency responses are in excellent agreement with simulations. Thanks to the proper design of the CPW electrodes, the two PDs exhibit an output power roll-off of only 4.3 dB and 4.8 dB from dc to 170 GHz, respectively, and high saturation performance is maintained over the broadband frequency range of 130–170 GHz.

Depletion Region Optimization in UTC Photodiodes for High Speed and High Power Performance

High-Power, Wide-Bandwidth Modified Uni-Traveling-Carrier Photodiodes with an Optimized Depletion Region

Nearly-Ballistic Optimization Design of High-Speed Uni-Traveling-Carrier Photodiodes

Ultrafast MUTC Photodiodes over 200 GHz with High Saturation Power.

Back-illuminated Modified Uni-Traveling-carrier Photo-Diodes (Mutc-Pds) with 3-Db Bandwidth over 40 GHz

Ultrafast MUTC Photodiodes with 230 GHz Bandwidth

150 GHz Bandwidth Modified Uni-traveling-carrier Photodiodes with 2.45 Dbm Saturation Output Power

Bandwidth Optimization and Fabrication of High-Power MUTC-PD

Design and optimization of MUTC photodiode performance under high-power operating conditions

Ultrafast Dual-Drifting Layer Uni-Traveling Carrier Photodiode with High Saturation Current

Back-To-Back Utc-Pds with High Responsivity, High Saturation Current and Wide Bandwidth

Study on the Saturation Characteristics of High-Speed Uni-Traveling-carrier Photodiodes Based on Field Screening Analysis

Bandwidth improvement of high power uni-traveling-carrier photodiodes by reducing the series resistance and capacitance

190 GHz Bandwidth Modified Uni-Traveling Carrier Photodiodes with High Saturation Power.

Design Consideration of Uni-Traveling Carrier Photodiode: Influence of Doping Profile and Buffer Layer

Ultra-Wide Bandwidth and High Saturation Power Uni-Traveling Carrier Photodiodes

The Effect of Illumination Uniformity on the Saturation Characteristics of Photodiode

Ultra-fast Waveguide MUTC Photodiodes over 220 GHz

Research on Ultra-Wideband and High Saturation Power Uni-Traveling Carrier Photodetectors(invited)

Comprehensive Design Method of MUTC-PD for Terahertz Applications

D-Band MUTC Photodiodes with Flat Frequency Response