Abstract:This paper presents preliminary results of a high speed 1550 nm indium gallium arsenide (InGaAs)-based mesa-type modified uni-traveling carrier photodiode (M-UTC-PD) structure. Conventional UTC-PD refers to P-I-N type photodiodes which selectively use electrons as active carriers. Photons absorbed in the relatively thin P-type absorber create minority carriers which are field accelerated toward a depleted collector thereby establishing high velocity ballistic transport, making these structures applicable for high speed applications. The M-UTC-PD structure presented uses spatially tailored P-type absorber regions to limit minority carrier generation both in the lateral and axial dimensions. Utilizing an otherwise conventional UTC-PD epitaxial structure where the top P-type layers are undoped, the spatially tailored P-type regions are defined by closed ampoule Zinc diffusion techniques. The M-UTC-PD structure presented utilizes a series of nested p-doped rings within a mesa structure to limit dark current and reduce overall capacitance to improve high speed operation. Two photodiode structures will be investigated for this research project, a conventional UTC-PD structure and a modified structure, utilizing similar device designs, epitaxial designs and fabrication processes. The conventional structure will be utilized for fabrication process development, verification of epi quality and development of rapid prototyping approach toward chip-based testing and subsequent high speed RF testing procedures. Conventional UTC-PD device results will be used as a comparison to quantify the performance of the M-UTC-PD structure utilizing Zn-doped defined p-type absorber regions. Results are given for chip tests of UTC-PD chips verifying epitaxial quality and fabrication process, subsequent testing of packaged devices and RF analysis remains. Process development of the Zn-doped devices is underway, once completed, these devices will be compared to the base design to quantify performance enhancement associated with the modified design.

Design Consideration of Uni-Traveling Carrier Photodiode: Influence of Doping Profile and Buffer Layer

Back-illuminated Modified Uni-Traveling-carrier Photo-Diodes (Mutc-Pds) with 3-Db Bandwidth over 40 GHz

Nearly-Ballistic Optimization Design of High-Speed Uni-Traveling-Carrier Photodiodes

Study on the Saturation Characteristics of High-Speed Uni-Traveling-carrier Photodiodes Based on Field Screening Analysis

Design of uni-traveling-carrier photodiode with nanoscale optical microstructures

Bandwidth improvement of high power uni-traveling-carrier photodiodes by reducing the series resistance and capacitance

Depletion Region Optimization in UTC Photodiodes for High Speed and High Power Performance

High-Speed Mid-Wave Infrared InAs/InAsSb Superlattice Uni-Traveling Carrier Photodetectors with Different Absorber Doping

High Speed 1550 nm Indium Gallium Arsenide-Indium Phosphide Photodetector

Bandwidth Optimization and Fabrication of High-Power MUTC-PD

Back-To-Back Utc-Pds with High Responsivity, High Saturation Current and Wide Bandwidth

High Overall Performance Uni-Traveling Carrier Photodiodes for Sub-Thz Wave Generation

High-Power, Wide-Bandwidth Modified Uni-Traveling-Carrier Photodiodes with an Optimized Depletion Region

Ultrafast Dual-Drifting Layer Uni-Traveling Carrier Photodiode with High Saturation Current

Beyond 110 GHz Uni-Traveling Carrier Photodiodes on an InP-Membrane-on-Silicon Platform

Double-cliff-layer Uni-Traveling-carrier Photodiode with High Responsivity and Ultra-Broad Bandwidth

An 850 Nm InGaAs Modified Uni-Traveling-Carrier Photodiode Enhanced by Distributed Bragg Reflector

Analysis of Frequency Response of High Power MUTC Photodiodes Based on Photocurrent-Dependent Equivalent Circuit Model

An Equivalent Circuit Model for Uni-Traveling-Carrier Photodiode

Research on Ultra-Wideband and High Saturation Power Uni-Traveling Carrier Photodetectors(invited)

Modified Uni-Traveling Carrier Photodiodes Heterogeneously Integrated on Silicon-on-Insulator (SOI)