High-Speed Mid-Wave Infrared InAs/InAsSb Superlattice Uni-Traveling Carrier Photodetectors with Different Absorber Doping

Jian Huang,Zhecheng Dai,Zhijian Shen,Zongti Wang,Zhiqi Zhou,Ziyu Wang,Bo Peng,Weimin Liu,Baile Chen
DOI: https://doi.org/10.1109/ted.2022.3218489
2022-01-01
Abstract:In this article, we studied two high-speed mid-wave infrared InAs/InAsSb type-II superlattice (T2SL) uni-traveling carrier (UTC) photodetectors (PDs) with different graded p-doping profiles in the absorber. It is found that the UTC device with higher absorber p-doping (hereafter referred to as Device A) has a larger 3-dB bandwidth than that of the device with lower absorber p-doping (hereafter referred to as Device B). However, Device A shows a higher dark current and lower responsivity performance than Device B. The peak responsivity of Devices A and B is about 0.9 and 1.2 A/W, respectively, under −1 V at room temperature. The performance comparisons of both devices are explored in detail. These results could contribute a further step toward developing high-speed InAs/InAsSb T2SL PDs.
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