Mid-Wave Infrared High-Speed InAs/GaSb Superlattice Uni-Traveling Carrier Photodetector

Zhijian Shen,Jinshan Yao,Hong Lu,Baile Chen

DOI: https://doi.org/10.1109/oecc56963.2023.10209925

2023-01-01

Abstract:We present a UTC-structured high-speed InAs/GaSb T2SL MWIR PD. At 300K, The device has a 4.2 $\mu \mathrm{m}$ zero-bias responsivity of 0.24 A/W and a 4.54 GHz 3-dB bandwidth at -5V.

What problem does this paper attempt to address?

High-Speed Mid-Wave Infrared Uni-Traveling Carrier Photodetector with Inductive Peaked Dewar Packaging

Zhijian Shen,Jinshan Yao,Jian Huang,Zhecheng Dai,Luyu Wang,Fengyu Liu,Xinbo Zou,Bo Peng,Weimin Liu,Hong Lu,Baile Chen

DOI: https://doi.org/10.1109/jlt.2023.3322967

IF: 4.7

2024-01-01

Journal of Lightwave Technology

Abstract:Recently, there has been a growing demand for high-speed mid-wave infrared (MWIR) photodetectors (PDs) driven by the emergence of new fields, such as free-space communication and frequency comb spectroscopy. In this study, we investigated a high-speed InAs/GaSb type-II superlattice (T2SL) MWIR uni-traveling carrier (UTC) PD with relatively low dark current and high responsivity. We also perform an inductive peaked dewar packaging on the PD to be user-friendly and allow cryogenic operation. The original on-wafer PD shows a dark current density of 54.05 A/cm 2 at 300 K, along with a responsivity exceeding 0.36 A/W at 4.5 μm and a 3-dB bandwidth of 3.83 GHz at -5 V bias. The inductive-peaked device in dewar packaging demonstrates a dark current density of 1.65×10 -5 A/cm 2 at 77 K, and a responsivity of 0.39 A/W at 4 μm, and a 3-dB bandwidth of 5.29 GHz.
High-Speed Mid-Wave Infrared InAs/InAsSb Superlattice Uni-Traveling Carrier Photodetectors with Different Absorber Doping

Jian Huang,Zhecheng Dai,Zhijian Shen,Zongti Wang,Zhiqi Zhou,Ziyu Wang,Bo Peng,Weimin Liu,Baile Chen

DOI: https://doi.org/10.1109/ted.2022.3218489

2022-01-01

Abstract:In this article, we studied two high-speed mid-wave infrared InAs/InAsSb type-II superlattice (T2SL) uni-traveling carrier (UTC) photodetectors (PDs) with different graded p-doping profiles in the absorber. It is found that the UTC device with higher absorber p-doping (hereafter referred to as Device A) has a larger 3-dB bandwidth than that of the device with lower absorber p-doping (hereafter referred to as Device B). However, Device A shows a higher dark current and lower responsivity performance than Device B. The peak responsivity of Devices A and B is about 0.9 and 1.2 A/W, respectively, under −1 V at room temperature. The performance comparisons of both devices are explored in detail. These results could contribute a further step toward developing high-speed InAs/InAsSb T2SL PDs.
High Speed Mid-Infrared Interband Cascade Photodetector Based on InAs/GaSb Type-II Superlattice

Yaojiang Chen,Xuliang Chai,Zhiyang Xie,Zhuo Deng,Ningtao Zhang,Yi Zhou,Zhicheng Xu,Jianxin Chen,Baile Chen

DOI: https://doi.org/10.48550/arXiv.1907.05592

2019-07-12

Applied Physics

Abstract:High speed mid-wave infrared (MWIR) photodetectors have applications in the areas such as free space optical communication and frequency comb spectroscopy. However, most of the research on the MWIR photodetectors is focused on how to increase the quantum efficiency and reduce the dark current, in order to improve the detectivity (D*), and the 3dB bandwidth performance of the corresponding MWIR photodetectors is still not fully studied. In this work, we report and characterize a MWIR interband cascade photodetector based on InAs/GaSb type-II superlattice with a 50% cutoff wavelength at ~5.3 um at 300 K. The 3 dB cutoff frequency is 2.4 GHz at 300 K, for a 40 {\mu}m circular diameter device under -5 V applied bias. Limitations on the detector high speed performance are also discussed.High speed mid-wave infrared (MWIR) photodetectors have applications in the areas such as free space optical communication and frequency comb spectroscopy. However, most of the research on the MWIR photodetectors is focused on how to increase the quantum efficiency and reduce the dark current, in order to improve the detectivity (D*), and the 3dB bandwidth performance of the corresponding MWIR photodetectors is still not fully studied. In this work, we report and characterize a MWIR interband cascade photodetector based on InAs/GaSb type-II superlattice with a 50% cutoff wavelength at ~5.3 um at 300 K. The 3 dB cutoff frequency is 2.4 GHz at 300 K, for a 40 um circular diameter device under -5 V applied bias. Limitations on the detector high speed performance are also discussed.
Molecular Beam Epitaxy Growth and Characteristics of the High Quantum Efficiency InAs/GaSb Type-Ii Superlattices MWIR Detector

Chen Kai-Hao,Xu Zhi-Cheng,Liang Zhao-Ming,Zhu Yi-Hong,Chen Jian-Xin,He Li

DOI: https://doi.org/10.11972/j.issn.1001-9014.2021.03.001

2021-01-01

JOURNAL OF INFRARED AND MILLIMETER WAVES

Abstract:A very high quantum efficiency InAs/GaSb T2SL mid-wavelength infrared (MWIR) photodetector has been grown by molecular beam epitaxy (MBE). The T2SL detector structure material exhibited smooth surface with step-flow growth and excellent structural homogeneity. The 50% cut-off wavelength was about 5.5 mu m. The peak current responsivity was 2.6 A/W corresponding to a quantum efficiency over 80% at 77 K,which was comparable to that of MCT. At 77 K,the dark current density at -50 mV bias was 1.8x10(-6) A/cm(2) and the resistance-area product (RA) at maximum (-50 mV bias) was 3.8x10(5) Omega.cm(2). The peak detectivity was calculated to be 6.1 x 10(12) cm Hz(1/2)/W.
Mid-Wave Infrared InAs/GaSb Type-II Superlattice Photodetector with N-B-p Design Grown on GaAs Substrate

Zhuo Deng,Daqian Guo,Jian Huang,Huiyun Liu,Jiang Wu,Baile Chen

DOI: https://doi.org/10.1109/jqe.2019.2917946

IF: 2.5

2019-01-01

IEEE Journal of Quantum Electronics

Abstract:In this paper, we report the direct growth and characterization of a mid-wave infrared InAs/GaSb type-II superlattice n-B-p photodetector on a GaAs substrate. The design consists of an n-doped contact, a wide bandgap unipolar barrier, and a p-doped absorber, which uses photogenerated electron as minority carriers to enjoy the longer electron diffusion length compared with hole diffusion length. At 77 K, the device exhibits a dark current density of $2.9\times 10^{-5}$ A/cm2 under −0.1 V and a zero-bias differential-resistance-area product (R0A) in excess of $8\times 10^{3}~ \Omega \cdot \text {cm}^{2}$ . Arrhenius analysis of dark current demonstrates that the dominant mechanism is diffusion at a temperature higher than 130 K. 50% cutoff wavelength of the detector is found at $6.4~\mu \text{m}$ at 77 K under zero bias, with a peak responsivity of 0.56 A/W. The corresponding specific detectivity is $7.6\times 10^{11}~\text {cm}\cdot \text {Hz}^{1/2}$ /W. The key device parameters which limit the further optimization of performance are discussed.
High-Performance Midwave Type-II Superlattice Infrared Photodetectors With a Stepped InAs/GaSb Absorber

Qi Yuan,Chuang Li,Daqian Guo,Xinyue Cui,Xingyu Tang,Kai Shen,Jiang Wu,Zhiming Wang

DOI: https://doi.org/10.1109/ted.2023.3256965

IF: 3.1

2023-04-25

IEEE Transactions on Electron Devices

Abstract:Due to the short carrier diffusion length, the extraction of photogenerated carriers is one of the key issues in InAs/GaSb superlattice (SL) photodetectors. Here, we report a midinfrared InAs/GaSb SL absorber with a stepped band alignment. The stepped absorber facilitates a better carrier extraction efficiency. Simulation results show that the proposed nBn detector with a stepped absorber exhibited a substantial performance improvement over the nBn detectors with uniform absorbers. At 150 K, the detector with a 3.6- -thick stepped absorber has a maximum quantum efficiency (QE) of 46%, which is about 16% higher than that of the detectors with uniform absorbers. The maximum specific detectivity reached cm Hz /W at 4.9 under −0.2 V bias. With the enhanced carrier extraction efficiency, the detectivity can gained a further improvement with a thicker stepped absorber, unlike the detector with a uniform absorber where the detectivity deteriorated with the absorber thickness increased from 3.6 to .

engineering, electrical & electronic,physics, applied
Mid-wave InAs/GaSb Superlattice PiBN Infrared Photodetector Grown on GaAs Substrate

Jian Huang,Daqian Guo,Zhuo Deng,Huiyun Liu,Jiang Wu,Baile Chen

DOI: https://doi.org/10.1109/acp.2018.8595800

2018-01-01

Abstract:We present a GaAs based PiBN InAs/GaSb type II superlattice photodetector for mid infrared application with peak responsivity of 0.52A/W at 3.2um at 77K under 0V.
High Bandwidth Surface-Illuminated Ingaas/Inp Uni-Travelling- Carrier Photodetector

Li Chong,Xue Chun-Lai,Li Chuan-Bo,Liu Zhi,Cheng Bu-Wen,Wang Qi-Ming

DOI: https://doi.org/10.1088/1674-1056/22/11/118503

2013-01-01

Chinese Physics B

Abstract:Uni-traveling-carrier photodiodes（UTC-PDs）with ultrafast response and high saturation output are reported.A gradient doping layer and a narrow InP cliff layer were introduced to enhance the saturation and bandwidth characteristics.We measured the dark current,photo response,bandwidth,and saturation current of the fabricated UTC devices.For a15-μm-diameter device,the dark current was 3.5 nA at a reverse bias of 1 V,and the 3-dB bandwidth was 17.2 GHz at a reverse bias of 5 V,which are comparable to the theoretically values.The maximum responsivity at 1.55μm was 0.32 A/W.The saturation output current was over 19.0 mA without bias.
Mid-wavelength Nbn Photodetector with High Operating Temperature and Low Dark Current Based on InAs/InAsSb Superlattice Absorber

Peng Cao,Tiancai Wang,Hongling Peng,Zhanguo Li,Qiandong Zhuang,Wanhua Zheng

DOI: https://doi.org/10.3788/col202422.012502

IF: 2.56

2024-01-01

Chinese Optics Letters

Abstract:In this paper, we demonstrate nBn InAs/InAsSb type II superlattice (T2SL) photodetectors with AlAsSb as the barrier that targets mid -wavelength infrared (MWIR) detection. To improve operating temperature and suppress dark current, a specific Sb soaking technique was employed to improve the interface abruptness of the superlattice with device passivation using a SiO2 layer. These result in ultralow dark current density of 6.28 x 10-6 A/cm2 and 0.31 A/cm2 under -600 mV at 97 K and 297 K, respectively, which is lower than most reported InAs/InAsSb-based MWIR photodetectors. Corresponding resistance area product values of 3.20 x 104 omega center dot cm2 and 1.32 omega center dot cm2 were obtained at 97 K and 297 K. A peak responsivity of 0.39 A/W with a cutoff wavelength around 5.5 mu m and a peak detectivity of 2.1 x 109 cm center dot Hz1/2/W were obtained at a high operating temperature up to 237 K.
Pbn Type Short-Wavelength Infrared Photodetector with an Ultralow Dark Current and Extended Wavelength Based on a Strained InGaAs/GaAsSb Superlattice.

Peng Cao,Matthew Bentley,Minghui You,Jiaqi Wei,Hongling Peng,Tiancai Wang,Chunxu Song,Qiandong Zhuang,Wanhua Zheng

DOI: https://doi.org/10.1364/ol.543761

IF: 3.6

2024-01-01

Optics Letters

Abstract:An InGaAs/GaAsSb type II superlattice (T2SL) absorber is a promising alternative material for a short-wavelength infrared (SWIR) photodetector due to the largely tunable bandgap by adjusting the thickness and material composition of InGaAs and GaAsSb in each T2SL period. We demonstrate a pBn type SWIR photodetector consisting of a strained InGaAs/GaAsSb T2SL absorber and AlGaAsSb barrier. The device presents an ultralow dark current density of 1.81 × 10-4 A/cm2 and a peak responsivity of 0.38 A/W under a reverse bias of -1 V at 300 K. The detector shows a peak detectivity of 1.62 × 1011 cm·Hz1/2/W and 4.63 × 1010 cm·Hz1/2/W under a reverse bias of -1 V at 260 K and 300 K, respectively. Moreover, our photodetector demonstrates an extended 100% cutoff wavelength response up to 2.2 μm.
High Speed 1550 nm Indium Gallium Arsenide-Indium Phosphide Photodetector

Erik Perez,Ronald LaComb,Faquir Jain

DOI: https://doi.org/10.1142/s0129156423500131

2023-07-22

International Journal of High Speed Electronics and Systems

Abstract:This paper presents preliminary results of a high speed 1550 nm indium gallium arsenide (InGaAs)-based mesa-type modified uni-traveling carrier photodiode (M-UTC-PD) structure. Conventional UTC-PD refers to P-I-N type photodiodes which selectively use electrons as active carriers. Photons absorbed in the relatively thin P-type absorber create minority carriers which are field accelerated toward a depleted collector thereby establishing high velocity ballistic transport, making these structures applicable for high speed applications. The M-UTC-PD structure presented uses spatially tailored P-type absorber regions to limit minority carrier generation both in the lateral and axial dimensions. Utilizing an otherwise conventional UTC-PD epitaxial structure where the top P-type layers are undoped, the spatially tailored P-type regions are defined by closed ampoule Zinc diffusion techniques. The M-UTC-PD structure presented utilizes a series of nested p-doped rings within a mesa structure to limit dark current and reduce overall capacitance to improve high speed operation. Two photodiode structures will be investigated for this research project, a conventional UTC-PD structure and a modified structure, utilizing similar device designs, epitaxial designs and fabrication processes. The conventional structure will be utilized for fabrication process development, verification of epi quality and development of rapid prototyping approach toward chip-based testing and subsequent high speed RF testing procedures. Conventional UTC-PD device results will be used as a comparison to quantify the performance of the M-UTC-PD structure utilizing Zn-doped defined p-type absorber regions. Results are given for chip tests of UTC-PD chips verifying epitaxial quality and fabrication process, subsequent testing of packaged devices and RF analysis remains. Process development of the Zn-doped devices is underway, once completed, these devices will be compared to the base design to quantify performance enhancement associated with the modified design.
High-Speed Compact Plasmonic-PdSe<sub>2</sub> Waveguide-Integrated Photodetector

Jialing Jian,Jianghong Wu,Chuyu Zhong,Hui Ma,Boshu Sun,Yuting Ye,Ye Luo,Maoliang Wei,Kunhao Lei,Ruizhe Liu,Zequn Chen,Guangyi Li,Hao Dai,Renjie Tang,Chunlei Sun,Junying Li,Wei Li,Ming Li,Hongtao Lin,Lan Li

DOI: https://doi.org/10.1021/acsphotonics.3c00453

IF: 7

2023-01-01

ACS Photonics

Abstract:Waveguide-integrated photodetectors are essential components in integrated photonic circuits since they facilitate light conversion into electrical signals. Nonetheless, optical absorption and carrier collection can significantly affect the device performance. As a solution to this issue, plasmonic slot waveguides confine optical energy within a subwavelength scale in a photoconductive detector, enhancing optical absorption and providing extremely short channels to collect carriers. Two-dimensional van der Waals layered palladium selenide (PdSe2) exhibits the merits of a narrow bandgap and high carrier mobility, thus positioning it as a favorable candidate material for photodetectors operating at the telecommunication band. In this study, we propose and experimentally verify a high-speed PdSe2-plasmonic waveguide-integrated photodetector with a dark current of 4.5 mu A and an intrinsic responsivity of 560.1 mA center dot W-1 at 3 V. Additionally, it has an internal quantum efficiency of 32.3%, and the measured 3 dB bandwidth is 17.5 GHz. This integrated photodetector fulfills the requirements of various critical applications in optical communication, microwave photonics, sensing, and imaging.
Visible-extended Mid-Infrared Wide Spectrum Detector Based on InAs/GaSb Type-ⅱ Superlattices (T2SL)

Chunyan Guo,Yaoyao Sun,Zhe Jia,Zhi Jiang,Yuexi Lv,Hongyue Hao,Xi Han,Yinan Dong,Dongwei Jiang,Guowei Wang,Yingqiang Xu,Tao Wang,Jinshou Tian,Zhaoxin Wu,Zhichuan Niu

DOI: https://doi.org/10.1016/j.infrared.2017.12.020

IF: 2.997

2018-01-01

Infrared Physics & Technology

Abstract:The authors report an innovative design of wide spectrum detector that can detect visible and mid-infrared spectrum, from 0.4 to 5 μm, simultaneously. The detector is designed with microstructure of various types of photon traps fabricated on mid-infrared InAs/GaSb type-II superlattice materials. Quantum efficiency has been significantly improved due to the action of photon traps which can decrease the reflectivity of the surface of InAs/GaSb type-Ⅱ superlattice down to less than 5%. Under the condition of 77 K and 200 mV bias voltage, the responsivity of the detector is about 0.025–0.45 A/W in the visible wavelength regime of 400–790 nm, more than 0.3 A/W in spectrum of 800–2000 nm, respectively. Through the optimized photon trap structure, the responsivity of detector is to 1.25 A/W and predominantly improve the quantum efficiency of the detector up to 52.5% at 3 μm.
Waveguide-integrated PdSe2 photodetector with high responsivity and speed in the near-infrared range across the O+E+S+C bands

Jianghong Wu,Hui Ma,Chuyu Zhong,Maoliang Wei,Chunlei Sun,Yuting Ye,Yan Xu,Bo Tang,Ye Luo,Boshu Sun,Jialing Jian,Hao Dai,Hongtao Lin,Lan Li

DOI: https://doi.org/10.21203/rs.3.rs-1399761/v1

2022-01-01

Abstract:Abstract Hybrid integration of two-dimensional (2D) materials on a silicon photonic platform enables diverse exploration of novel active functions and significant improvement in device performance for next-generation silicon integrated photonic circuits. 2D transition metal dichalcogenide materials (TMDCs) have attracted extensive attention for photodetectors, but developing high-performance waveguide-integrated photodetectors based on conventionally investigated 2D TMDCs at the telecom C-band is still a big challenge because of their large optical bandgap and slow carrier mobility. Here, we propose PdSe2, a new type of 2D TMDC, to be integrated with silicon photonic components for on-chip photodetection with high responsivity and speed in the datacom and telecom optical bands ranging from the O-band to the C-band. The obtained waveguide-integrated photodetectors show a high responsivity of 1190.2 mA W−1 at 1550 nm and a low noise-equivalent power of 4.0 pW Hz-0.5 at 5V. The 3 dB bandwidth reaches up to 1.5 GHz, and the measured data rate is 2.5 Gbit s−1. The achieved PdSe2 photodetectors provide new insights to explore the integration of novel 2D TMDCs with silicon photonics and demonstrate the potential of integrated photodetectors for applications in diverse areas, including optical communications, on-chip spectroscopy, and sensing.
Mid-wavelength infrared InAs/GaSb type Ⅱ superlattice detectors

Xu Qingqing,Chen Jianxin,Zhou Yi,Li Tianxing,Jin Jupeng,Lin Chun,He Li

2012-01-01

Infrared and Laser Engineering

Abstract:Infrared(IR) photo detectors based on InAs/GaSb type II superlattice have developed quickly in recent years.Many groups show great interest in InAs/GaSb superlattice detector for its superiors as high quantum efficient,high working temperature,high uniformity and low dark current densities.The growth of mid-wavelength infrared InAs/GaSb superlattice on GaSb substrates by molecular beam epitaxy(MBE) was studied.The growth temperature and the interface structures to obtain high quality material were optimized.The InAs/GaSb superlattice layers were characterized by atomic force microscope(AFM) and high resolution X-ray diffraction(XRD).Finally,highly lattice matched mid-infrared InAs/GaSb superlattice material was achieved.The FWHM of the 0th satellite peak of X-ray scanning curve is 28.8 arcsec.The p-i-n single IR photodiode based on InAs/GaSb superlattice has current responsivity of 0.48 A/W and blackbody detectivity of 4.54×1010 cmHz1/2W,and peak detectivity of 1.75×1011 cmHz1/2W at 77 K.
InAs/GaSb Type-II superlattice (T2SL) photodetector operating in the very-long wavelength infrared (VLWIR) spectral domain

P. Christol,R. Alchaar,J. -B. Rodriguez,L. Höglund,S. Naureen,R. Marcks von Würtemberg,C. Asplund,E. Costard,A. Rouvié,J. Brocal,O. Saint-Pé

DOI: https://doi.org/10.1117/12.2536158

2019-07-12

Abstract:In this communication, we report on electrical and electro-optical characterizations of InAs/GaSb Type-II superlattice (T2SL) LWIR photodetector, showing cut-off wavelengths at 11μm at 77K. The devices, made of barrier structures in XBp configuration, were grown by molecular beam epitaxy (MBE) on GaSb substrate. Experimental measurements on samples were made by photoresponse spectra, by capacitance-voltage (C-V) and dark current-voltage (I-V) characteristics performed as a function of temperature.
Dual-color mid-mid-wavelength infrared InAs / InAsSb superlattice focal plane arrays

He Ying-Jie,Peng Zhen-Yu,Cao Xian-Cun,Zhu Xu-Bo,Tao Fei,Ding Jia-Xing,Yao Guan-Sheng,Zhang Li-Xue,Li Mo,Wang Wei,Lyu Yan-Qiu

DOI: https://doi.org/10.11972/j.issn.1001-9014.2022.03.004

2022-01-01

JOURNAL OF INFRARED AND MILLIMETER WAVES

Abstract:Superlattice materials have become the preferred materials for third-generation infrared focal plane detectors. The dual-band infrared detector can suppress the complex background and improve the detection effect by comparing the spectral information difference in the two bands,which is particularlyimportant in demand. In this paper,it reports research results of 320 x 256 dual-color mid- mid- wavelength infrared InAs /InAsSb superlattice focal plane arrays. The detector structure is NBN epitaxial multilayer and the signal is read out by sequential mode. The pixel center distance from the detector is 30 mu m,At 77 K measurement,the SMW detector has a peak detectivity of 7. 2 x 10(11) cm.Hz(1/2)W(-1) and dead pixels rate of 0. 49%;the MW detector has a peak detectivity of 6. 7x10(11) cm.Hz(1/2)W(-1) and dead pixels rate of 0. 87%. Infrared images of both wavebands have been taken well-infrared imaging test by adjusting devices voltage bias.
320 x 256 dual-color mid-wavelength infrared InAs/GaSb superlattice focal plane arrays

Bai Zhi-Zhong,Xu Zhi-Cheng,Zhou Yi,Yao Hua-Cheng,Chen Hong-Lei,Chen Jian-Xin,Ding Rui-Jun,He Li

2015-01-01

JOURNAL OF INFRARED AND MILLIMETER WAVES

Abstract:In this paper, we report research results of 256 x 256 dual-color mid-wavelength infrared InAs/GaSb superlattice focal plane arrays. The detector structure is PN-NP epitaxial multilayer and the signal is read out by sequential mode. The superlattice structure was grown on GaSb substrate using molecular beam epitaxy ( MBE) technology. The respective structure of each absorption region are 7ML (InAs) /7ML ( GaSb) and 10ML (InAs) /10ML (GaSb). The pixel center distance of the detector is 30 mu m. At 77 K measurement, the detector has 50% cut-off wavelength of 4.2 mu m and 5.5 mu m respectively; The N-on-P detector has a peak detectivity of 6.0 x 10(10) cmHz(1/2)W(-1) and dead pixels rate of 8.6%; The P-on-N detector has a peak detectivity of 2.3 x 10(9) cmHz(1/2)W(-1) and dead pixels rate of 9.8%. Infrared images of both wavebands have been taken using infrared imaging test by adjusting devices voltage bias.
Growth and Photo-Electronic Characteristics of Short/mid Wave Dual-Band Infrared Detectors Based on GaSb Bulk and InAs/GaSb Superlattices

Xiaole Ma,Jie Guo,Ruiting Hao,Guoshuai Wei,Faran Chang,Yong Li,Xiaoming Li,Dongwei Jiang,Guowei Wang,Yingqiang Xu,Zhichuan Niu

DOI: https://doi.org/10.1364/ome.416272

2021-01-01

Optical Materials Express

Abstract:In this paper, we demonstrate a bias-selective short/mid wave dual-band infrared detector based on GaSb bulk materials and InAs/GaSb type-II superlattices with 50% cut-off wavelengths of 1.55 mu m and 4.62 mu m respectively. At 77 K, the short wave channel exhibited a peak quantum efficiency of 35.86% at 1.43 mu m and a dark current density of 8.41 x 10(-5) A/cm(2) under the forward 5.0 V bias, thereby providing a Johnson-noise-limited detectivity of 7.63 x 10(11) cm . Hz(1/2)/W. The mid-wave channel showed a quantum efficiency of 10.45% at 4.0 mu m and dark current density of 4.17 x 10(-3) A/cm(2) under -1.35 V bias, resulting in a detectivity of4.05 x 10(10) cm . Hz(1/2)/W. The cross-talk was very low in the short wave channel, but existed in the mid wave channel originated from the contribution of the residual built-in electric field in the short wave channel. Furthermore, the schematic band alignment of N-I-P-P-I-N back-to-back structure was also discussed for further optimization. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
Demonstration of Si Based InAs/GaSb Type-Ii Superlattice P-I-n Photodetector

Zhuo Deng,Daqian Guo,Claudia Gonzalez Burguete,Zongheng Xie,Jian Huang,Huiyun Liu,Jiang Wu,Baile Chen

DOI: https://doi.org/10.1016/j.infrared.2019.06.011

IF: 2.997

2019-01-01

Infrared Physics & Technology

Abstract:In this paper, mid-wave infrared photodetection based on an InAs/GaSb type-II superlattice p-i-n photodetector grown directly on Si substrate is demonstrated and characterized. Excitation power dependence on integrated intensity from the photoluminescence measurements reveals a power coefficient of P~I0.74, indicating that defects related process is playing an important role in the predominant recombination channel for photogenerated carriers. At 70 K, the device exhibits a dark current density of 2.3 A/cm2 under -0.1 V bias. Arrhenius analysis of dark current shows activation energies much less than half of the active layer bandgap, which suggests that the device is mainly limited by surface leakage and defect-assisted tunneling, consistent with the photoluminescence analysis. The detector shows 50% cutoff wavelength at ~5.5 um at 70 K under bias of -0.1 V. The corresponding peak responsivity and specific detectivity are 1.2 A/W and 1.3*10e9 cm*Hz1/2/W, respectively. Based on these optoelectronics characterization results, reduction of defects by optimizing the III/V-Si interface, and suppression of surface leakage channels are argued to be the main factors for performance improvement in this Si-based T2SL detector towards low cost, large-format MWIR detection system on Si photonics platform.

Mid-Wave Infrared High-Speed InAs/GaSb Superlattice Uni-Traveling Carrier Photodetector

High-Speed Mid-Wave Infrared Uni-Traveling Carrier Photodetector with Inductive Peaked Dewar Packaging

High-Speed Mid-Wave Infrared InAs/InAsSb Superlattice Uni-Traveling Carrier Photodetectors with Different Absorber Doping

High Speed Mid-Infrared Interband Cascade Photodetector Based on InAs/GaSb Type-II Superlattice

Molecular Beam Epitaxy Growth and Characteristics of the High Quantum Efficiency InAs/GaSb Type-Ii Superlattices MWIR Detector

Mid-Wave Infrared InAs/GaSb Type-II Superlattice Photodetector with N-B-p Design Grown on GaAs Substrate

High-Performance Midwave Type-II Superlattice Infrared Photodetectors With a Stepped InAs/GaSb Absorber

Mid-wave InAs/GaSb Superlattice PiBN Infrared Photodetector Grown on GaAs Substrate

High Bandwidth Surface-Illuminated Ingaas/Inp Uni-Travelling- Carrier Photodetector

Mid-wavelength Nbn Photodetector with High Operating Temperature and Low Dark Current Based on InAs/InAsSb Superlattice Absorber

Pbn Type Short-Wavelength Infrared Photodetector with an Ultralow Dark Current and Extended Wavelength Based on a Strained InGaAs/GaAsSb Superlattice.

High Speed 1550 nm Indium Gallium Arsenide-Indium Phosphide Photodetector

High-Speed Compact Plasmonic-PdSe<sub>2</sub> Waveguide-Integrated Photodetector

Visible-extended Mid-Infrared Wide Spectrum Detector Based on InAs/GaSb Type-ⅱ Superlattices (T2SL)

Waveguide-integrated PdSe2 photodetector with high responsivity and speed in the near-infrared range across the O+E+S+C bands

Mid-wavelength infrared InAs/GaSb type Ⅱ superlattice detectors

InAs/GaSb Type-II superlattice (T2SL) photodetector operating in the very-long wavelength infrared (VLWIR) spectral domain

Dual-color mid-mid-wavelength infrared InAs / InAsSb superlattice focal plane arrays

320 x 256 dual-color mid-wavelength infrared InAs/GaSb superlattice focal plane arrays

Growth and Photo-Electronic Characteristics of Short/mid Wave Dual-Band Infrared Detectors Based on GaSb Bulk and InAs/GaSb Superlattices

Demonstration of Si Based InAs/GaSb Type-Ii Superlattice P-I-n Photodetector