Zero-Bias High-Speed Evanescently Coupled Waveguide Type-II UTC Photodiode

Fengxin Yu,Keye Sun,Qianhuan Yu,Andreas Beling

DOI: https://doi.org/10.1364/ofc.2020.w4g.6

2020-01-01

Abstract:We demonstrate GaAs 0.5 Sb 0.5 /In 0.53 Al y Ga 0.47-y As uni-traveling carrier (UTC) waveguide photodiodes with high bandwidth of up to 66 GHz at zero bias and over 100 GHz bandwidth under low bias condition.

What problem does this paper attempt to address?

High-Power Evanescently Coupled Waveguide MUTC Photodiode With >105-GHz Bandwidth

J. Campbell,K. Sun,Qinglong Li,Qianhuan Yu,A. Beling,P. Runge,Kejia Li,W. Ebert

DOI: https://doi.org/10.1109/JLT.2017.2759210

IF: 4.7

2017-11-01

Journal of Lightwave Technology

Abstract:We demonstrate high-speed and high-power evanescently coupled waveguide integrated modified unitraveling carrier photodiodes. Over 105-GHz bandwidth along with 2 and 1.3 dBm RF output power at 100 and 105 GHz, respectively, has been achieved.

Engineering,Physics,Materials Science
High-Speed 850 nm Photodetector for Zero-Bias Operation

Zhiyang Xie,Zhiqi Zhou,Linze Li,Zhuo Deng,Haiming Ji,Baile Chen

DOI: https://doi.org/10.1109/jstqe.2021.3095470

IF: 4.9

2022-03-01

IEEE Journal of Selected Topics in Quantum Electronics

Abstract:High-speed photodetector operating at 850 nm wavelength with a large diameter and high quantum efficiency is desirable to meet the growing demands of short-reach optical links for high-performance computing systems. Zero-bias operation of the high-speed photodetectors can reduce power consumption, minimize system complexity of the optical transceivers and reduce the radiation damage in a harsh environment. Traditional p-i-n photodetectors for 850 nm applications often require a high reverse bias to accelerate the carrier transport for high-speed data transmission. In this work, we demonstrate a high-speed and low dark current modified uni-traveling-carrier photodiode based on GaAsAlGaAs at 850 nm wavelength operating under zero bias with a quantum efficiency of 73. The 3-dB bandwidth of the 20 m and 40 m diameter devices is 22.5 GHz and 13.3 GHz, respectively. A clear eye pattern is demonstrated at a 25.8 Gbits data rate for the device under zero-bias operation. To the best of our knowledge, this photodetector demonstrates the highest 3-dB bandwidth among all the zero-bias 850 nm photodetectors reported to date.

engineering, electrical & electronic,optics,physics, applied,quantum science & technology
High Overall Performance Uni-Traveling Carrier Photodiodes for Sub-Thz Wave Generation

Jianwei Chen,Ran Hao,Zheng Zhen,Huaqing Jiang,Kaida Tang,Chenyuan Chen,Shangzhong Jin

DOI: https://doi.org/10.1364/ao.481495

IF: 1.9

2023-01-01

Applied Optics

Abstract:Modified near-ballistic uni-traveling-carrier photodiodes with improved overall performances were studied theoretically and experimentally. A bandwidth up to 0.2 THz with a 3 dB bandwidth of 136 GHz and large output power of 8.22 dBm (99 GHz) under the −2V bias voltage were obtained. The device exhibits good linearity in the photocurrent-optical power curve even at large input optical power, with a responsivity of 0.206 A/W. Physical explanations for the improved performances have been made in detail. The absorption layer and the collector layer were optimized to retain a high built-in electric field around the interface, which not only ensures the smoothness of the band structure but also facilitates the near-ballistic transmission of uni-traveling carriers. The obtained results may find potential applications in future high-speed optical communication chips and high-performance terahertz sources.
Ultra-fast Waveguide MUTC Photodiodes over 220 GHz

Linze Li,Luyu Wang,Tianyu Long,Zhouze Zhang,Juanjuan Lu,Baile Chen

2024-02-12

Abstract:We present InP-based evanescently-coupled waveguide modified uni-traveling carrier photodiodes (MUTC-PDs) exhibiting a breakthrough in bandwidth. The optimization of carrier transport and optical coupling is achieved through a detailed discussion on the design of the cliff layer and waveguide layer. Addressing the parasitic capacitance challenge, we introduce benzocyclobutene (BCB) beneath the PD electrodes, effectively overcoming the bandwidth bottleneck associated with the RC time constant. Devices with sizes of 2 * 7 um2 and 2 * 10 um2 achieve 3-dB bandwidths over 220 GHz, along with external responsivities of 0.161 A/W and 0.237 A/W, respectively. Notably, the RF output power reaches a peak of -1.69 dBm at 215 GHz for 2 * 15 um2 PDs.

Applied Physics,Optics
Evanescently Coupled Waveguide Uni-Travelling Carrier Photodiodes with Wide Bandwidth and High Responsivity

Mingwei Sun,Bing Xiong,Changzheng Sun,Zhibiao Hao,Jian Wang,Lai Wang,Yanjun Han,Hongtao Li,Lin Gan,Yi Luo

DOI: https://doi.org/10.1364/cleo_si.2024.sm1l.6

2024-01-01

Abstract:Evanescently coupled waveguide uni-travelling carrier photodiodes utilizing multi-layer coupling waveguide structure has been proposed. Wide bandwidth of 120 GHz and high responsivity of 0.50 A/W at −1 V bias have been demonstrated without spot-size converters.
High-Performance Inverted Evanescently-coupledWaveguide Integrated MUTC-PD with High Responsespeed

Fangli Wang,Bojian Zhang,Liang Wang

DOI: https://doi.org/10.1364/ao.437921

IF: 1.9

2021-01-01

Applied Optics

Abstract:Here we propose an inverted evanescently-coupled waveguide modified uni-traveling-carrier photodiode (IECWG MUTC-PD) and verify the character numerically. In this photodiode, the epitaxial structure is inverted from p-i-n to n-i-p, and a diluted waveguide is applied. The material of capacitance control layer is optimized to realize energy band compensation and capacitance control. Such structure possesses a large electric field in the whole depletion region and has a uniform light absorption, which improves the space charge effect. As a result, the PD achieves a 3-dB bandwidth of 71.9 GHz with a 35 µ m 2 active area at − 5 V bias voltage and an internal responsivity of 0.59 A/W in 7-µm long short PD with a 200-nm-thick absorption layer.
High performance waveguide uni-travelling carrier photodiode grown by solid source molecular beam epitaxy

Xiaoli Lin,Michele Natrella,James Seddon,Chris Graham,Cyril C. Renaud,Mingchu Tang,Jiang Wu,Huiyun Liu,Alwyn J. Seeds

DOI: https://doi.org/10.1364/OE.27.037065

IF: 3.8

2019-12-07

Optics Express

Abstract:Xiaoli Lin, Michele Natrella, James Seddon, Chris Graham, Cyril C. Renaud, Mingchu Tang, Jiang Wu, Huiyun Liu, Alwyn J. Seeds The first waveguide coupled phosphide-based UTC photodiodes grown by Solid Source Molecular Beam Epitaxy (SSMBE) are reported in this ... [Opt. Express 27, 37065-37086 (2019)]

optics
40 GHz Si/Ge Uni-Traveling Carrier Waveguide Photodiode

Molly Piels,John E. Bowers

DOI: https://doi.org/10.1109/jlt.2014.2310780

IF: 4.7

2014-10-01

Journal of Lightwave Technology

Abstract:We report a Si/Ge waveguide-coupled uni-traveling carrier (UTC) photodiode for high-power high-speed applications. Using the uni-traveling carrier structure rather than a PIN structure, capacitance and power handling are decoupled from responsivity and transit-time, enabling a detector with a 40 GHz bandwidth and a dilute absorption profile. This photodiode had a responsivity at 1550 nm of 0.5 A/W and a −1 dB compression current of 1.5 mA at 40 GHz. A longer device with the same cross-section had a 33 GHz bandwidth, responsivity of 0.7 A/W, and −1 dB compression current of 2.1 mA at 30 GHz.

engineering, electrical & electronic,optics,telecommunications
Mid-Wave Infrared High-Speed InAs/GaSb Superlattice Uni-Traveling Carrier Photodetector

Zhijian Shen,Jinshan Yao,Hong Lu,Baile Chen

DOI: https://doi.org/10.1109/oecc56963.2023.10209925

2023-01-01

Abstract:We present a UTC-structured high-speed InAs/GaSb T2SL MWIR PD. At 300K, The device has a 4.2 $\mu \mathrm{m}$ zero-bias responsivity of 0.24 A/W and a 4.54 GHz 3-dB bandwidth at -5V.
Beyond 110 GHz Uni-Traveling Carrier Photodiodes on an InP-Membrane-on-Silicon Platform

Jasper de Graaf,Xinran Zhao,Dimitrios Konstantinou,Menno van den Hout,Sander Reniers,Longfei Shen,Sjoerd van der Heide,Simon Rommel,Idelfonso Tafur Monroy,Chigo Okonkwo,Zizheng Cao,Ton Koonen,Kevin Williams,Yuqing Jiao

DOI: https://doi.org/10.1109/jstqe.2021.3110411

IF: 4.9

2022-03-01

IEEE Journal of Selected Topics in Quantum Electronics

Abstract:In this work we have demonstrated a waveguide integrated uni-traveling carrier photodiode on an InP-membrane-on-silicon platform with 3 dB bandwidth beyond 110 GHz. With design optimization and an improved process, devices as small as $ ext{3} imes ext{2};mu ext{m}^2$ are successfully realized. An electrical equivalent circuit model based on measured S-parameters revealed ultra-small series resistance and junction capacitance as low as 6.5 $Omega$ and 4.4 fF, respectively, in the diodes. The model also provided insight in the photocurrent dependent characteristics in the bandwidth and resonsivity of the devices. Finally, data transmission measurements are demonstrated, showcasing the high speed telecommunication abilities of the UTC-PD.

engineering, electrical & electronic,optics,physics, applied,quantum science & technology
Two-micron wavelength high speed photodiode with InGaAs/GaAsSb type-II multiple quantum wells absorber

Yaojiang Chen,Zhiyang Xie,Jian Huang,Zhuo Deng,Baile Chen

DOI: https://doi.org/10.48550/arXiv.1905.07258

2019-05-17

Applied Physics

Abstract:Current optical communication system operating at 1.55 {\mu}m wavelength band may not be able to continually satisfy the growing demand on the data capacity within the next few years. Opening a new spectral window at around 2 {\mu}m wavelength with recently developed hollow-core photonic band gap fiber and thulium-doped fiber amplifier is a promising solution to increase the transmission capacity due to the low loss and wide bandwidth properties of these components at this wavelength. However, as a key component, the already demonstrated high speed photodetectors at 2 {\mu}m wavelength are still not comparable with those at 1.55 {\mu}m wavelength band, which chokes the feasibility of the new spectral window. In this work, we, for the first time, demonstrated a high speed uni-traveling carrier photodiode for 2 {\mu}m applications with InGaAs/GaAsSb type-II multiple quantum wells as the absorption region, which is lattice matched to InP. The device shows a 3dB bandwidth of 25 GHz at -3 V bias voltage and is, to the best of our knowledge, the fastest photodiodes among all group III-V and group IV photodetectors working in 2 {\mu}m wavelength range.
Study on the Saturation Characteristics of High-Speed Uni-Traveling-carrier Photodiodes Based on Field Screening Analysis

Tuo Shi,Bing Xiong,Changzheng Sun,Yi Luo

DOI: https://doi.org/10.3788/col201109.082302

2011-01-01

Abstract:A back-illuminated mesa-structure InGaAs/InP charge-compensated uni-traveling-carrier (UTC) photodiode (PD) is fabricated, and its saturation characteristics are investigated. The responsivity of the 40-\mu m-diameter PD is as high as 0.83 A/W, and the direct current (DC) saturation current is up to 275 mA. The 1-dB compression point at the 3-dB cutoff frequency of 9 GHz is measured to be 100 mA, corresponding to an output radio frequency (RF) power of up to 20.1 dBm. According to the calculated electric field distributions in the depleted region under both DC and alternating current (AC) conditions, the saturation of the UTC-PD is caused by complete field screening at high optical injection levels.
Back-To-Back Utc-Pds with High Responsivity, High Saturation Current and Wide Bandwidth

Tuo Shi,Bing Xiong,Changzheng Sun,Yi Luo

DOI: https://doi.org/10.1109/lpt.2012.2229703

IF: 2.6

2013-01-01

IEEE Photonics Technology Letters

Abstract:A novel back-illuminated mesa-structure back-to-back uni-traveling-carrier photodiode (UTC-PD) is proposed and realized. By stacking two UTC-PDs to form a PINIP structure, high responsivity, high output saturation power, and wide bandwidth are achieved simultaneously. The responsivity of a 24-mu m-diameter device is as high as 0.86 A/W, and a 3-dB bandwidth up to 28.3 GHz is attained. The saturation current up to 62 mA at 1-dB compression point is demonstrated at the frequency of 24 GHz.
Two-micron-wavelength germanium-tin photodiodes with low dark current and gigahertz bandwidth.

Yuan Dong,Wei Wang,Shengqiang Xu,Dian Lei,Xiao Gong,Xin Guo,Hong Wang,Shuh-Ying Lee,Wan-Khai Loke,Soon-Fatt Yoon,Yee-Chia Yeo

DOI: https://doi.org/10.1364/oe.25.015818

IF: 3.8

2017-01-01

Optics Express

Abstract:We report the demonstration of a germanium-tin (Ge 0.90.121-1-
Depletion Region Optimization in UTC Photodiodes for High Speed and High Power Performance

Jin Li,Bing Xiong,Changzheng Sun,Yi Luo,Jian Wang,Zhibiao Hao,Lai Wang,Yanjun Han,Hongtao Li

DOI: https://doi.org/10.1109/oecc.2015.7340226

2015-01-01

Abstract:Depletion region of uni-traveling-carrier photodiodes (UTC-PDs) is optimized. Wide bandwidth of 28.5 GHz and high saturation photocurrent of 38 mA at 20 GHz are achieved for a 14-μm diameter device.
Back-illuminated Modified Uni-Traveling-carrier Photo-Diodes (Mutc-Pds) with 3-Db Bandwidth over 40 GHz

Zheng Zhen,Ran Hao,Dong Xing,Zhihong Feng,Shangzhong Jin,Erping Li

DOI: https://doi.org/10.1117/12.2585422

2020-01-01

Abstract:InP-based back-illuminated modified uni-traveling-carrier photodiodes (MUTC-PDs) with high-speed and high-responsivity are demonstrated using flip-chip technology in this letter. The partially depleted absorption layer with gradual doping and cliff layer are utilized to realize large 3-dB bandwidth. A high responsivity of 0.54 A/W with over 40 GHz large 3-dB bandwidth from a 7-mu m-diameter back-illuminated MUTC-PD is achieved. The results demonstrate that the modified design can effectively enhance the internal electric field and concentration gradient, so as to optimize the response speed of the device.
Ultrafast MUTC Photodiodes with 230 GHz Bandwidth

Yuxin Tian,Bing Xiong,Changzheng Sun,Zhibiao Hao,Jian Wang,Lai Wang,Yanjun Han,Hongtao Li,Lin Gan,Yi Luo

DOI: https://doi.org/10.1109/OECC56963.2023.10209609

2023-01-01

Abstract:Novel back-illuminated modified uni-traveling-carrier photodiodes (MUTC-PDs) are designed to achieve ultrawide bandwidth. The fabricated 3-μm-diameter PDs demonstrate a 3-dB bandwidth of 230 GHz with a saturation power of −4.94 dBm @ 220 GHz.
High Speed 1550 nm Indium Gallium Arsenide-Indium Phosphide Photodetector

Erik Perez,Ronald LaComb,Faquir Jain

DOI: https://doi.org/10.1142/s0129156423500131

2023-07-22

International Journal of High Speed Electronics and Systems

Abstract:This paper presents preliminary results of a high speed 1550 nm indium gallium arsenide (InGaAs)-based mesa-type modified uni-traveling carrier photodiode (M-UTC-PD) structure. Conventional UTC-PD refers to P-I-N type photodiodes which selectively use electrons as active carriers. Photons absorbed in the relatively thin P-type absorber create minority carriers which are field accelerated toward a depleted collector thereby establishing high velocity ballistic transport, making these structures applicable for high speed applications. The M-UTC-PD structure presented uses spatially tailored P-type absorber regions to limit minority carrier generation both in the lateral and axial dimensions. Utilizing an otherwise conventional UTC-PD epitaxial structure where the top P-type layers are undoped, the spatially tailored P-type regions are defined by closed ampoule Zinc diffusion techniques. The M-UTC-PD structure presented utilizes a series of nested p-doped rings within a mesa structure to limit dark current and reduce overall capacitance to improve high speed operation. Two photodiode structures will be investigated for this research project, a conventional UTC-PD structure and a modified structure, utilizing similar device designs, epitaxial designs and fabrication processes. The conventional structure will be utilized for fabrication process development, verification of epi quality and development of rapid prototyping approach toward chip-based testing and subsequent high speed RF testing procedures. Conventional UTC-PD device results will be used as a comparison to quantify the performance of the M-UTC-PD structure utilizing Zn-doped defined p-type absorber regions. Results are given for chip tests of UTC-PD chips verifying epitaxial quality and fabrication process, subsequent testing of packaged devices and RF analysis remains. Process development of the Zn-doped devices is underway, once completed, these devices will be compared to the base design to quantify performance enhancement associated with the modified design.
A Compact Evanescently-Coupled Germanium Pin Waveguide Photodetector

Zhijuan Tu,Kaibo Liu,Huaxiang Yi,Runxi Zhou,Xingjun Wang,Zhiping Zhou,Zhangyuan Chen

DOI: https://doi.org/10.1117/12.2001221

2012-01-01

Abstract:A compact 1.6x10 mu m(2) germanium pin waveguide photodetector was demonstrated on a Silicon-on-Insulator substrate. The dark current of the photodetector was measured to be 0.66 mu A at -1V bias voltage, which is much lower than recently reported. The photodetector exhibited a 3-dB bandwidth of 20GHz at the wavelength of 1.55 mu m. A clear open eye diagram at 10Gb/s was also obtained.

Zero-Bias High-Speed Evanescently Coupled Waveguide Type-II UTC Photodiode

High-Power Evanescently Coupled Waveguide MUTC Photodiode With >105-GHz Bandwidth

High-Speed 850 nm Photodetector for Zero-Bias Operation

High Overall Performance Uni-Traveling Carrier Photodiodes for Sub-Thz Wave Generation

Ultra-fast Waveguide MUTC Photodiodes over 220 GHz

Evanescently Coupled Waveguide Uni-Travelling Carrier Photodiodes with Wide Bandwidth and High Responsivity

High-Performance Inverted Evanescently-coupledWaveguide Integrated MUTC-PD with High Responsespeed

High performance waveguide uni-travelling carrier photodiode grown by solid source molecular beam epitaxy

40 GHz Si/Ge Uni-Traveling Carrier Waveguide Photodiode

Mid-Wave Infrared High-Speed InAs/GaSb Superlattice Uni-Traveling Carrier Photodetector

Beyond 110 GHz Uni-Traveling Carrier Photodiodes on an InP-Membrane-on-Silicon Platform

Two-micron wavelength high speed photodiode with InGaAs/GaAsSb type-II multiple quantum wells absorber

Study on the Saturation Characteristics of High-Speed Uni-Traveling-carrier Photodiodes Based on Field Screening Analysis

Back-To-Back Utc-Pds with High Responsivity, High Saturation Current and Wide Bandwidth

Two-micron-wavelength germanium-tin photodiodes with low dark current and gigahertz bandwidth.

Depletion Region Optimization in UTC Photodiodes for High Speed and High Power Performance

Back-illuminated Modified Uni-Traveling-carrier Photo-Diodes (Mutc-Pds) with 3-Db Bandwidth over 40 GHz

Ultrafast MUTC Photodiodes with 230 GHz Bandwidth

High Speed 1550 nm Indium Gallium Arsenide-Indium Phosphide Photodetector

A Compact Evanescently-Coupled Germanium Pin Waveguide Photodetector