Abstract:In this paper, mid-wave infrared photodetection based on an InAs/GaSb type-II superlattice p-i-n photodetector grown directly on Si substrate is demonstrated and characterized. Excitation power dependence on integrated intensity from the photoluminescence measurements reveals a power coefficient of P~I0.74, indicating that defects related process is playing an important role in the predominant recombination channel for photogenerated carriers. At 70 K, the device exhibits a dark current density of 2.3 A/cm2 under -0.1 V bias. Arrhenius analysis of dark current shows activation energies much less than half of the active layer bandgap, which suggests that the device is mainly limited by surface leakage and defect-assisted tunneling, consistent with the photoluminescence analysis. The detector shows 50% cutoff wavelength at ~5.5 um at 70 K under bias of -0.1 V. The corresponding peak responsivity and specific detectivity are 1.2 A/W and 1.3*10e9 cm*Hz1/2/W, respectively. Based on these optoelectronics characterization results, reduction of defects by optimizing the III/V-Si interface, and suppression of surface leakage channels are argued to be the main factors for performance improvement in this Si-based T2SL detector towards low cost, large-format MWIR detection system on Si photonics platform.

Investigation of a Noise Source and Its Impact on the Photocurrent Performance of Long-Wave-infrared InAs/GaSb Type-Ii Superlattice Detectors.

Investigation of low frequency noise-current correlation for the InAs/GaSb type-II superlattice long-wavelength infrared detector

Investigation of Dark Current Mechanisms on Type-Ii InAs/GaSb Superlattice Very Long Wavelength Infrared Detectors

Investigation of Dark Current and Differential Resistance Contributing Mechanisms in Type-Ii InAs/GaSb Superlattice

Fabrication and Characterization of InAs/GaSb Type-Ii Superlattice Long-Wavelength Infrared Detectors Aiming High Temperature Sensitivity

Exploiting the Correlation Between 1/f Noise-Dark Current in PIN InGaAs Photodetectors

Dark Current Analysis Of Long Wavelength Inas/Gasb Superlattice Infrared Detector

Performance comparison between the InAs-based and GaSb-based type-II superlattice photodiodes for long wavelength infrared detection.

Inas-Based Type-Ii Superlattice Long Wavelength Photodetectors

Dark Current and Noise Analysis for Long-wavelength Infrared HgCdTe Avalanche Photodiodes

Investigations of Quantum Efficiency in Type-Ii Inas/Gasb Very Long Wavelength Infrared Superlattice Detectors

Studies on the surface treatment of InAs/GaSb type-II super-lattice long-wave infrared detectors

Dark Current Characterization And Simulation For In0.78ga0.22as Pin Photodetectors

Effects of Etching Processes on Surface Dark Current of Long-Wave Infrared InAs/GaSb Superlattice Detectors

Fabrication and Characteristics of InAs/GaSb Type-II Superlattice Infrared Detector Pixel Mesas

Demonstration of Si Based InAs/GaSb Type-Ii Superlattice P-I-n Photodetector

Photocurrent spectra of InAs/Ga0.75In0.25Sb superlattices with infrared detector structure

Real-time Gamma Irradiation Effects on Long-Wavelength InAs/GaSb Type II Superlattice Infrared Detector

Design and calculation of photoelectric properties of resonance enhanced InAs/GaSb type-II superlattices photodetectors with diffraction rings structure

Deep-Level Traps Induced Dark Currents In Extended Wavelength Inxga1-Xas/Inp Photodetector

Growth and Fabrication of InAs/GaSb Type II Superlattice Mid-Wavelength Infrared Photodetectors