Abstract:This work investigates midwave infrared Type-II InAs/GaSb superlattice (SL) grown by molecular beam epitaxy on GaSb substrate. In order to compensate the natural tensile strain of the InAs layers, two different shutter sequences have been explored during the growth. The first one consists of growing an intentional InSb layer at both interfaces (namely GaSb-on-InAs and InAs-on-GaSb interfaces) by migration enhanced epitaxy while the second uses the antimony-for-arsenic exchange to promote an InSb-like interface at the GaSb-on-InAs interface. SLs obtained via both methods are compared in terms of structural, morphological and optical properties by means of high-resolution x-ray diffraction, atomic force microscopy and photoluminescence spectroscopy. By using the second method, we obtained a nearly strain-compensated SL on GaSb with a full width at half maximum of 56 arcsec for the first-order SL satellite peak. Relatively smooth surface has been achieved with a root mean square value of about 0.19 nm on a 2 $\mu m$ x 2 $\mu m$ scan area. Finally, a p-i-n device structure having a cut-off wavelength of 5.15 $\mu m$ at 77K has been demonstrated with a dark-current level of $8.3 * 10^{-8} A/cm^2$ at -50 mV and a residual carrier concentration of $9.7 * 10^{14} cm^{-3}$, comparable to the state-of-the-art.

Design and calculation of photoelectric properties of resonance enhanced InAs/GaSb type-II superlattices photodetectors with diffraction rings structure

Growth and Fabrication of InAs/GaSb Type II Superlattice Mid-Wavelength Infrared Photodetectors

Light-harvesting for High Quantum Efficiency in InAs-based InAs/GaAsSb Type-Ii Superlattices Long Wavelength Infrared Photodetectors

High-Performance Midwave Type-II Superlattice Infrared Photodetectors With a Stepped InAs/GaSb Absorber

Mid-wavelength infrared InAs/GaSb type Ⅱ superlattice detectors

High Performance InAs/GaAsSb Superlattice Long Wavelength Infrared Photo-Detectors Grown on InAs Substrates

Investigations of Quantum Efficiency in Type-Ii Inas/Gasb Very Long Wavelength Infrared Superlattice Detectors

InAs/GaSb Type-Ⅱ Superlattices for Infrared Detector

Investigation of a Noise Source and Its Impact on the Photocurrent Performance of Long-Wave-infrared InAs/GaSb Type-Ii Superlattice Detectors.

Molecular Beam Epitaxy Growth and Characteristics of the High Quantum Efficiency InAs/GaSb Type-Ii Superlattices MWIR Detector

InAs/InAsSb Type-Ii Superlattice with Near Room-Temperature Long-Wave Emission Through Interface Engineering

Material and device characterization of Type-II InAS/GaSb superlattice infrared detectors

Inas-Based Type-Ii Superlattice Long Wavelength Photodetectors

InAs/InAsSb Type-II Strained-Layer Superlattice Infrared Photodetectors

Photocurrent spectra of InAs/Ga0.75In0.25Sb superlattices with infrared detector structure

InAs-based InAs/GaAsSb Type-Ii Superlattices: Growth and Characterization

High-Performance Mid-Wavelength InAs/GaSb Superlattice Infrared Detectors Grown by Production-Scale Metalorganic Chemical Vapor Deposition

InAs/GaSb type-II superlattice mid-wavelength infrared focal plane array detectors grown by molecular beam epitaxy

Fabrication and Characterization of InAs/GaSb Type-Ii Superlattice Long-Wavelength Infrared Detectors Aiming High Temperature Sensitivity

InAs/GaAsSb Type-II Superlattice LWIR Focal Plane Arrays Detectors Grown on InAs Substrates

Schematic of InAs/GaSb superlattice VLWIR photodide with PIN structure and the current responsivity spectrum of the SL photodiode. Interface optimization and fabrication of InAs/GaSb type II superlattice for very long wavelength infrared photodetectors