New procedure to replace the aortic valve with autologous pericardium: a clinical case.

M. Aupart,Y. Meurisse,X. Dreyfus,F. Diemont,A. Sirinelli,M. Marchand

DOI: https://doi.org/10.1016/0003-4975(94)91117-7

1994-07-01

Abstract:

What problem does this paper attempt to address?

Long and Very Long Wavelength InAs/InAsSb Superlattice Complementary Barrier Infrared Detectors

David Z. Ting,Arezou Khoshakhlagh,Alexander Soibel,Sam A. Keo,Anita M. Fisher,Brian J. Pepper,Linda Höglund,Sir B. Rafol,Cory J. Hill,Sarath D. Gunapala

DOI: https://doi.org/10.1007/s11664-022-09561-3

IF: 2.1

2022-03-23

Journal of Electronic Materials

Abstract:While the n-type InAs/InAsSb type-II strained layer superlattice (T2SLS) has demonstrated excellent detector and focal plane array performance in the mid-wavelength infrared, it is limited in its attainable quantum efficiency (QE) in the long and very long wavelength infrared due to short hole diffusion length and modest absorption coefficient. We explore InAs/InAsSb T2SLS unipolar barrier infrared detectors that contain p-type absorber layers in order to take advantage of the longer electron diffusion length for QE enhancement. We find that while they can achieve enhanced QE, their dark current characteristics are affected by the presence of metallurgical and surface p-n junctions, and are best operated under lower biasing conditions where the tunneling dark currents are less pronounced. We report results on complementary barrier infrared detector structures that use n-type absorbers, a combination of p- and n-type absorbers, and p-type absorbers, with cutoff wavelengths ranging from 10.0 µm to 15.3 µm.

engineering, electrical & electronic,materials science, multidisciplinary,physics, applied
Mid-wavelength high operating temperature barrier infrared detector and focal plane array

David Z. Ting,Alexander Soibel,Arezou Khoshakhlagh,Sir B. Rafol,Sam A. Keo,Linda Höglund,Anita M. Fisher,Edward M. Luong,Sarath D. Gunapala

DOI: https://doi.org/10.1063/1.5033338

IF: 4

2018-07-09

Applied Physics Letters

Abstract:We analyze and compare different aspects of InAs/InAsSb and InAs/GaSb type-II superlattices for infrared detector applications and argue that the former is the most effective when implemented for mid-wavelength infrared detectors. We then report results on an InAs/InAsSb superlattice based mid-wavelength high operating temperature barrier infrared detector. At 150 K, the 50% cutoff wavelength is 5.37 μm, the quantum efficiency at 4.5 μm is ∼52% without anti-reflection coating, the dark current density under −0.2 V bias is 4.5 × 10−5 A/cm2, and the dark-current-limited and the f/2 black-body (300 K background in 3–5 μm band) specific detectivities are 4.6 × 1011 and 3.0 × 1011 cm-Hz1/2/W, respectively. A focal plane array made from the same material exhibits a mean noise equivalent differential temperature of 18.7 mK at 160 K operating temperature with an f/2 optics and a 300 K background, demonstrating significantly higher operating temperature than InSb.

physics, applied
InAs/GaSb Type-II superlattice (T2SL) photodetector operating in the very-long wavelength infrared (VLWIR) spectral domain

P. Christol,R. Alchaar,J. -B. Rodriguez,L. Höglund,S. Naureen,R. Marcks von Würtemberg,C. Asplund,E. Costard,A. Rouvié,J. Brocal,O. Saint-Pé

DOI: https://doi.org/10.1117/12.2536158

2019-07-12

Abstract:In this communication, we report on electrical and electro-optical characterizations of InAs/GaSb Type-II superlattice (T2SL) LWIR photodetector, showing cut-off wavelengths at 11μm at 77K. The devices, made of barrier structures in XBp configuration, were grown by molecular beam epitaxy (MBE) on GaSb substrate. Experimental measurements on samples were made by photoresponse spectra, by capacitance-voltage (C-V) and dark current-voltage (I-V) characteristics performed as a function of temperature.
Recent Progress on Infrared Photodetectors Based on InAs and InAsSb Nanowires

Tengfei Xu,Hailu Wang,Xiaoyao Chen,Man Luo,Lili Zhang,Yueming Wang,Fansheng Chen,Chongxin Shan,Chenhui Yu

DOI: https://doi.org/10.1088/1361-6528/ab8591

IF: 3.5

2020-01-01

Nanotechnology

Abstract:In recent years, quasi-1D semiconductor nanowires have attracted significant research interest in the field of optoelectronic devices. Indium arsenide (InAs) nanowire, a III–V compound semiconductor structure with a narrow band gap, shows high electron mobility and high absorption from the visible to the mid-wave infrared (MWIR), holding promise for room-temperature high-performance infrared photodetectors. Therefore, the material growth, device preparation and performance characteristics have attracted increasing attention, enabling high-sensitivity InAs nanowire photodetector from the visible to the MWIR at room temperature. This review starts by discussing the growth process of the low-dimensional structure and elementary properties of the material, such as the crystalline phase, mobility, morphology, surface states and metal contacts. Then, three solutions, including the visible-light-assisted infrared photodetection technology, vertical nanowire-array technology and band engineering by the growth of InAsSb nanowires with increasing Sb components, are elaborated to obtain longer cut-off wavelength MWIR photodetectors based on single InAs nanowire and its heterojunction structure. Finally, the potential and challenges of the state-of-the-art optoelectronic technologies for InAs nanowire MWIR photodetectors are summarized and compared, and preliminary suggestions for the technical development route and prospects are presented. This review mainly delineates the research progress of material growth, device fabrication and performance characterization of InAs nanowire MWIR photodetectors, providing a reference for the development of the next-generation high-performance photodetectors over a wide spectrum range.
MBE growth of mid-wavelength type II InAs/InAsSb superlattice photodetectors with wet etching and Al 2 O 3 passivation

Bingfeng Liu,Lianqing Zhu,Lidan Lu,Weiqiang Chen,Ruixin Gong,Ning Xie,Mingliang Gong,Qingsong Feng,Yang Chen,Xiantong Zheng,Mingli Dong

DOI: https://doi.org/10.1016/j.vacuum.2024.113087

IF: 4

2024-03-14

Vacuum

Abstract:We systematically investigated the molecular beam epitaxy (MBE) growth of nBn mid-wavelength photodetectors based on type II InAs/InAsSb superlattice (T2SL) with a lattice-matched high bandgap AlAsSb layer as a barrier. A comprehensive set of structural and optical characterizations was performed using AFM, XRD, TEM, and FTIR spectrometry on the MWIR Ga-free InAs/InAsSb T2SLs. Temperature-dependent photoluminescence (PL) measurements verify the suitability of the designed T2SL for MWIR applications by meeting the mid-wave wavelength requirements and exhibiting a lower Varshni parameter α. Optimization of the wet etching process using a solution of H3PO4, C6H8O7, H2O2, and H2O significantly reduced surface roughness. Dark current measurements demonstrated a notable reduction from 1.13 × 10-4 A/cm2 to 7.47 × 10-7 A/cm2 at −0.5 V and 80 K for devices processed with the optimized etching process and Al2O3 passivation. Significantly, the 50% cut-off wavelength closely aligned with the PL peak at 5.07 μm, underscoring the suitability of MBE-grown InAs/InAsSb T2SLs for MWIR photodetector fabrication.

materials science, multidisciplinary,physics, applied
Bias–selectable nBn dual–band long–/very long–wavelength infrared photodetectors based on InAs/InAs1−xSbx/AlAs1−xSbx type–II superlattices

Abbas Haddadi,Arash Dehzangi,Romain Chevallier,Sourav Adhikary,Manijeh Razeghi

DOI: https://doi.org/10.1038/s41598-017-03238-2

IF: 4.6

2017-06-13

Scientific Reports

Abstract:Type–II superlattices (T2SLs) are a class of artificial semiconductors that have demonstrated themselves as a viable candidate to compete with the state–of–the–art mercury–cadmium–telluride material system in the field of infrared detection and imaging. Within type–II superlattices, InAs/InAs1−xSbx T2SLs have been shown to have a significantly longer minority carrier lifetime. However, demonstration of high–performance dual–band photodetectors based on InAs/InAs1−xSbx T2SLs in the long and very long wavelength infrared (LWIR & VLWIR) regimes remains challenging. We report the demonstration of high–performance bias–selectable dual–band long–wavelength infrared photodetectors based on new InAs/InAs1−xSbx/AlAs1−xSbx type–II superlattice design. Our design uses two different bandgap absorption regions separated by an electron barrier that blocks the transport of majority carriers to reduce the dark current density of the device. As the applied bias is varied, the device exhibits well–defined cut–off wavelengths of either ∼8.7 or ∼12.5 μm at 77 K. This bias–selectable dual–band photodetector is compact, with no moving parts, and will open new opportunities for multi–spectral LWIR and VLWIR imaging and detection.

multidisciplinary sciences
Type-II InAs/GaSb/AlSb superlattice-based heterojunction phototransistors: back to the future

Abbas Haddadi,Arash Dehzangi,Romain Chevallier,Thomas Yang,Manijeh Razeghi

DOI: https://doi.org/10.1117/12.2297475

2018-01-26

Abstract:Most of reported HPTs in literatures are based on InGaAs compounds that cover NIR spectral region. However, InGaAs compounds provide limited cut-off wavelength tunability. In contrast, type-II superlattices (T2SLs) are a developing new material system with intrinsic advantages such as great flexibility in bandgap engineering, low growth and manufacturing cost, high-uniformity, auger recombination suppression, and high carrier effective mass that are becoming an attractive candidate for infrared detection and imaging from short-wavelength infrared to very long wavelength infrared regime. We present the recent advancements in T2SL-based heterojunction phototransistors in e– SWIR, MWIR and LWIR spectral ranges. A mid-wavelength infrared heterojunction phototransistor based on type-II InAs/AlSb/GaSb superlattices on GaSb substrate has been demonstrated. Then, we present the effect of vertical scaling on the optical and electrical performance of heterojunction phototransistors, where the performance of devices with different base width was compared as the base was scaled from 60 down to 40 nm.
Long wavelength InAs/InAsSb superlattice barrier infrared detectors with p-type absorber quantum efficiency enhancement

David Z. Ting,Alexander Soibel,Arezou Khoshakhlagh,Sam A. Keo,Anita M. Fisher,Sir B. Rafol,Linda Höglund,Cory J. Hill,Brian J. Pepper,Sarath D. Gunapala

DOI: https://doi.org/10.1063/5.0047937

IF: 4

2021-03-29

Applied Physics Letters

Abstract:We studied long and very long wavelength InAs/InAsSb superlattice barrier infrared detectors that contain p-type absorber layers in order to take advantage of the longer electron diffusion length for quantum efficiency (QE) enhancement. While they can achieve higher QE than devices that use only n-type absorbers, their dark current characteristics are affected by the presence of metallurgical and surface p–n junctions, and are best operated under lower biasing conditions where the tunneling dark currents are less pronounced. Rather than using a p-type absorber only, a barrier infrared detector structure with a combination of p- and n-type absorber sections can benefit from a shallower mesa etch that reduces fabrication demands and also decreases the p-type absorber exposed surface area. We compare four complementary barrier infrared detector structures that use an n-type absorber, a combination of p- and n-type absorbers, or a p-type absorber and briefly report results from a 13.3 μm cutoff focal plane array.

physics, applied
Short-period InAsSb-based strained layer superlattices for high quantum efficiency long-wave infrared detectors

Jinghe Liu,Dmitri Donetski,Kevin Kucharczyk,Jingze Zhao,Gela Kipshidze,Gregory Belenky,Stefan P. Svensson

DOI: https://doi.org/10.1063/5.0083862

IF: 4

2022-04-04

Applied Physics Letters

Abstract:Infrared detector barrier heterostructures with strained layer superlattice (SLS) absorbers with different periods were compared. The first was a reference using a conventional barrier heterostructure with a low temperature energy gap corresponding to a wavelength of 10 μm in a 2- μm-thick undoped absorber using a 10.9 nm period with InAs/InAsSb 0.36 compositions grown directly on a GaSb substrate. The second structure, in contrast, used a significantly shorter 4.3 nm period absorber with InAsSb 0.3 /InAsSb 0.55 compositions, similar energy gap, and absorber thickness, which were grown on a 6.2 Å lattice constant GaIn 0.3 Sb virtual substrate on GaSb. It was found that in the short period SLS, the vertical hole mobility and minority carrier lifetime in the temperature range of 80–150 K were a factor on 2–3 greater than in the reference structure. The improvement of the vertical hole mobility was attributed to the effect of hole delocalization. The latter results in an increase in the optical absorption coefficient and the quantum efficiency.

physics, applied
Material and device characterization of Type-II InAS/GaSb superlattice infrared detectors

M. Delmas,M. C. Debnath,B. L. Liang,D. L. Huffaker

DOI: https://doi.org/10.1016/j.infrared.2018.09.012

2019-08-02

Abstract:This work investigates midwave infrared Type-II InAs/GaSb superlattice (SL) grown by molecular beam epitaxy on GaSb substrate. In order to compensate the natural tensile strain of the InAs layers, two different shutter sequences have been explored during the growth. The first one consists of growing an intentional InSb layer at both interfaces (namely GaSb-on-InAs and InAs-on-GaSb interfaces) by migration enhanced epitaxy while the second uses the antimony-for-arsenic exchange to promote an InSb-like interface at the GaSb-on-InAs interface. SLs obtained via both methods are compared in terms of structural, morphological and optical properties by means of high-resolution x-ray diffraction, atomic force microscopy and photoluminescence spectroscopy. By using the second method, we obtained a nearly strain-compensated SL on GaSb with a full width at half maximum of 56 arcsec for the first-order SL satellite peak. Relatively smooth surface has been achieved with a root mean square value of about 0.19 nm on a 2 $\mu m$ x 2 $\mu m$ scan area. Finally, a p-i-n device structure having a cut-off wavelength of 5.15 $\mu m$ at 77K has been demonstrated with a dark-current level of $8.3 * 10^{-8} A/cm^2$ at -50 mV and a residual carrier concentration of $9.7 * 10^{14} cm^{-3}$, comparable to the state-of-the-art.

Applied Physics
High-Performance Midwave Type-II Superlattice Infrared Photodetectors With a Stepped InAs/GaSb Absorber

Qi Yuan,Chuang Li,Daqian Guo,Xinyue Cui,Xingyu Tang,Kai Shen,Jiang Wu,Zhiming Wang

DOI: https://doi.org/10.1109/ted.2023.3256965

IF: 3.1

2023-04-25

IEEE Transactions on Electron Devices

Abstract:Due to the short carrier diffusion length, the extraction of photogenerated carriers is one of the key issues in InAs/GaSb superlattice (SL) photodetectors. Here, we report a midinfrared InAs/GaSb SL absorber with a stepped band alignment. The stepped absorber facilitates a better carrier extraction efficiency. Simulation results show that the proposed nBn detector with a stepped absorber exhibited a substantial performance improvement over the nBn detectors with uniform absorbers. At 150 K, the detector with a 3.6- -thick stepped absorber has a maximum quantum efficiency (QE) of 46%, which is about 16% higher than that of the detectors with uniform absorbers. The maximum specific detectivity reached cm Hz /W at 4.9 under −0.2 V bias. With the enhanced carrier extraction efficiency, the detectivity can gained a further improvement with a thicker stepped absorber, unlike the detector with a uniform absorber where the detectivity deteriorated with the absorber thickness increased from 3.6 to .

engineering, electrical & electronic,physics, applied
High Speed Mid-Infrared Interband Cascade Photodetector Based on InAs/GaSb Type-II Superlattice

Yaojiang Chen,Xuliang Chai,Zhiyang Xie,Zhuo Deng,Ningtao Zhang,Yi Zhou,Zhicheng Xu,Jianxin Chen,Baile Chen

DOI: https://doi.org/10.48550/arXiv.1907.05592

2019-07-12

Applied Physics

Abstract:High speed mid-wave infrared (MWIR) photodetectors have applications in the areas such as free space optical communication and frequency comb spectroscopy. However, most of the research on the MWIR photodetectors is focused on how to increase the quantum efficiency and reduce the dark current, in order to improve the detectivity (D*), and the 3dB bandwidth performance of the corresponding MWIR photodetectors is still not fully studied. In this work, we report and characterize a MWIR interband cascade photodetector based on InAs/GaSb type-II superlattice with a 50% cutoff wavelength at ~5.3 um at 300 K. The 3 dB cutoff frequency is 2.4 GHz at 300 K, for a 40 {\mu}m circular diameter device under -5 V applied bias. Limitations on the detector high speed performance are also discussed.High speed mid-wave infrared (MWIR) photodetectors have applications in the areas such as free space optical communication and frequency comb spectroscopy. However, most of the research on the MWIR photodetectors is focused on how to increase the quantum efficiency and reduce the dark current, in order to improve the detectivity (D*), and the 3dB bandwidth performance of the corresponding MWIR photodetectors is still not fully studied. In this work, we report and characterize a MWIR interband cascade photodetector based on InAs/GaSb type-II superlattice with a 50% cutoff wavelength at ~5.3 um at 300 K. The 3 dB cutoff frequency is 2.4 GHz at 300 K, for a 40 um circular diameter device under -5 V applied bias. Limitations on the detector high speed performance are also discussed.
InP-based High-Performance Extended Short Wavelength P-B-n Infrared Photodetector with InGaAs/GaAsSb Type-Ii Superlattice Absorption Layer

Yan Liang,Wenguang Zhou,Xiangyu Zhang,Faran Chang,Nong Li,Yifan Shan,Ye Zhang,Fan Ye,Chuanbo Li,Xiangbin Su,Chengao Yang,Hongyue Hao,Guowei Wang,Dongwei Jiang,Donghai Wu,Haiqiao Ni,Yingqiang Xu,Zhichuan Niu,Youdou Zheng,Yi Shi

DOI: https://doi.org/10.1063/5.0223557

IF: 4

2024-01-01

Applied Physics Letters

Abstract:High-performance p-B-n infrared photodetectors based on In0.53Ga0.47As/Ga-0.51 As0.49Sb type-II superlattices with an Al0.85Ga0.15AsSb barrier on an InP substrate have been demonstrated. These photodetectors exhibit 50% and 100% cutoff wavelengths of similar to 2.1 mu m and similar to 2.6 mu m, respectively. At a bias voltage of -100 mV bias voltage, the device exhibits a peak responsivity of 0.618 A/W at 2.1 mu m, corresponding to a quantum efficiency of 36.5%. The device exhibits a saturated dark current shot noise limited specific detectivity (D*) of 4.12 x 10(10 )cmHz(1/2)/W (at a peak responsivity of 2.1 mu m) under -100 mV applied bias at 300 K.
Long-wavelength InAs/GaSb superlattice double heterojunction infrared detectors using InPSb/InAs superlattice hole barrier

Jiafeng Liu,He Zhu,Hong Zhu,Meng Li,Yunlong Huai,Zhen Liu,Yong Huang

DOI: https://doi.org/10.1088/1361-6641/ac62f9

IF: 2.048

2022-04-11

Semiconductor Science and Technology

Abstract:Abstract We demonstrate two double heterojunction long-wavelength infrared detectors based on InAs/GaSb superlattice on InAs substrates grown by metal-organic chemical vapor deposition. In the two structures, the hole barrier employs a novel InPSb/InAs superlattice to achieve conduction-band alignment, while the electron barrier is InAs/GaSb superlattice to achieve valence-band alignment. Two devices with n-type absorber layer and p-type absorber layer exhibit cut-off wavelengths of ∼10.4 μ m and ∼12.2 μ m, dark current densities of 9 × 10 −4 A cm −2 and 2 × 10 −2 A cm −2 , and specific detectivities of ∼1.7 × 10 10 cm Hz 1/2 W −1 and ∼1.5 × 10 10 cm Hz 1/2 W −1 , respectively. The device with n-type absorber has a lower dark current due to the natural valence-band alignment, but it has a low quantum efficiency (QE) resulting from the use of n-type absorber layer. In contrast, the device with p-type absorber has a higher dark current that can be possibly attributed to the conduction-band misalignment, but it achieves a higher QE due to the benefits from the p-type absorber.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter
Room-temperature InAsSb pBin detectors for mid-infrared application

Hao Xie,Hongyu Lin,Ziji Zhou,Zhengji Wen,Yan Sun,Jiaming Hao,Shuhong Hu,Ning Dai

DOI: https://doi.org/10.1016/j.infrared.2022.104475

2022-12-02

Abstract:InAs-based compound is a direct, narrow bandgap III-V semiconductor with high carrier mobility and an attractive optoelectronic device candidate for application in the infrared region. Herein, a pBin InAsSb photodetector structure has been grown successfully by cost-effective Liquid Phase Epitaxy (LPE) technique. The introduction of high quality InAsSbP barrier can effectively reduce dark current, which leads to good room-temperature detector performances. A clear room-temperature photoresponse (1.6 A/W, corresponding to 50% external quantum efficiency) in the middle wavelength infrared (MWIR) range has been achieved. In addition, due to nearly zero valence band offset at zero bias, InAsSbP barrier blocks the electron dark current, while allowing the photogenerated holes to flow to the contact, which dramatically improved the performance of the detector without a turn-on operating bias. This self-powered device can reduce the size and weight of the system, and can be further developed towards the optoelectronic integrated nanosystems. The combination of the good room-temperature performance, self-powered design, and cost-effective fabrication suggests that this pBin InAsSb photodetector has wide application prospect in both military and civilian field.

optics,physics, applied,instruments & instrumentation
Interfacial Characteristics and Optical Properties of InAs/InAsSb Type II Superlattices for the Mid‐Infrared Operation

Mengying Liu,Chao Shi,Weijie Li,Pengfei Nan,Xuan Fang,Binghui Ge,Zhi Xu,Dengkui Wang,Dan Fang,Xiaohua Wang,Jiaming Li,Liuqin Zeng,Peng Du,Jinhua Li

DOI: https://doi.org/10.1002/pssr.202200412

2023-01-01

physica status solidi (RRL) - Rapid Research Letters

Abstract:Identifying interfacial properties and discussing optical properties of antimony‐based type II superlattices are the key factors for developing high performance of infrared optoelectronic devices. Herein, the multi‐epitaxy‐layered structure of a mid‐wavelength‐responsive infrared detector with an InAs/InAsSb superlattice as an active area layer is grown and investigated. High‐resolution X‐ray diffraction, high‐resolution transmission electron microscopy, and the geometric phase analysis indicate epitaxial layers of high crystalline quality and small lattice mismatches. The electric field results obtained by differential phase contrast scanning transmission electron microscopy further confirm the sharp interface states and good periodic structure of the as‐grown samples. The photoluminescence spectrum shows that the photoluminescence signal center is 5.4 μm at 75 K, even at 320 K, the sample still maintains a photoluminescence signal of 6.2 μm.
Mid-wavelength infrared focal plane array based on type II InAs/GaSb superlattices on InP substrate

Masaki Sato,Hiroshi Inada,Hiroshi Obi,Hiroki Mori,Takuma Fuyuki,Sundararajan Balasekaran,Daisuke Kimura,Kenichi Machinaga,Yasuhiro Iguchi,Yasuhiro Muramatsu,Hiroshi Murofushi,Masahiko Sano,Junichi Kudo,Michiya Kibe,Masatoshi Koyama

DOI: https://doi.org/10.1016/j.infrared.2024.105133

IF: 2.997

2024-01-12

Infrared Physics & Technology

Abstract:We report the growth and characterization of band gap engineered mid-wavelength infrared photodiode, pBiBn, based on type-II InAs/GaSb superlattices on InP substrate. InP substrates are attractive material because they have high transmittance in the mid-wavelength infrared region and near thermal expansion coefficient to Si read-out IC (ROIC). Misfit dislocations due to lattice mismatch between GaSb and InP were successfully suppressed by thick GaSb buffer layer and two step growth of it. The photoluminescence (PL) spectrum from the absorption layers exhibits a peak wavelength of 5.01 μm at 77 K. The distinct PL peak was observed even at 120 K, indicating the excellent crystalline quality of T2SLs grown on an InP substrate. The dark current densities of 292 × 10 −6 A/cm 2 at 77 K and cut off wavelength of 5.15 μm at 80 K were measured, respectively. A clear image was obtained by fabricated focal plane array of 640 × 512 pixels with 15 μm pixel pitch, and NEDT and defective pixel rate was 50 mK and less than 1 % at 100 K, respectively.

optics,physics, applied,instruments & instrumentation
Multiband strain balanced superlattice material system for third generation infrared detectors

Arash Dehzangi

2024-05-14

Abstract:Recent increasing interest in strain balanced Type-II superlattices material causing close attention from industry. Tremendous investment was drawn toward establishing strain balanced superlattice (SLS) as new alternative for infrared photodetectors across the broad range of infrared spectrum. In recent years, SLS material system has shown capability in particular specifications to compete with mature and standard mercury cadmium telluride for mid-wavelength and long-wavelength infrared detection. It has been great interest in SLS material system for applications aligned with the standard of third generation of infrared detectors. In that level, photodetectors with multi-color detection capabilities based on SLS material system are highly desired. In this presentation, some recent progress in three color infrared photodetectors based on SLS material system will be presented.

Applied Physics
Optical Characterization of the Interband Cascade LWIR Detectors with Type-II InAs/InAsSb Superlattice Absorber

Krzysztof Murawski,Kinga Majkowycz,Małgorzata Kopytko,Tetiana Manyk,Karol Dąbrowski,Bartłomiej Seredyński,Łukasz Kubiszyn,Piotr Martyniuk

DOI: https://doi.org/10.3390/nano14171393

2024-08-26

Abstract:The long-wave infrared (LWIR) interband cascade detector with type-II superlattices (T2SLs) and a gallium-free ("Ga-free") InAs/InAsSb (x = 0.39) absorber was characterized by photoluminescence (PL) and spectral response (SR) methods. Heterostructures were grown by molecular beam epitaxy (MBE) on a GaAs substrate (001) orientation. The crystallographic quality was confirmed by high-resolution X-Ray diffraction (HRXRD). Two independent methods, combined with theoretical calculations, were able to determine the transitions between the superlattice minibands. Moreover, transitions from the trap states were determined. Studies of the PL intensity as a function of the excitation laser power allowed the identification of optical transitions. The determined effective energy gap (Eg) of the tested absorber layer was 116 meV at 300 K. The transition from the first light hole miniband to the first electron miniband was red-shifted by 76 meV. The detected defects' energy states were constant versus temperature. Their values were 85 meV and 112 meV, respectively. Moreover, two additional transitions from acceptor levels in cryogenic temperature were determined by being shifted from blue to Eg by 6 meV and 16 meV, respectively.
High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection

A. M. Hoang,G. Chen,R. Chevallier,A. Haddadi,M. Razeghi

DOI: https://doi.org/10.1063/1.4884947

IF: 4

2014-06-23

Applied Physics Letters

Abstract:Very long wavelength infrared photodetectors based on InAs/InAsSb type-II superlattices are demonstrated on GaSb substrate. A heterostructure photodiode was grown with 50% cut-off wavelength of 14.6 μm. At 77 K, the photodiode exhibited a peak responsivity of 4.8 A/W, corresponding to a quantum efficiency of 46% at −300 mV bias voltage from front side illumination without antireflective coating. With the dark current density of 0.7 A/cm2, it provided a specific detectivity of 1.4 × 1010 Jones. The device performance was investigated as a function of operating temperature, revealing a very stable optical response and a background limited performance below 50 K.

physics, applied

New procedure to replace the aortic valve with autologous pericardium: a clinical case.

Long and Very Long Wavelength InAs/InAsSb Superlattice Complementary Barrier Infrared Detectors

Mid-wavelength high operating temperature barrier infrared detector and focal plane array

InAs/GaSb Type-II superlattice (T2SL) photodetector operating in the very-long wavelength infrared (VLWIR) spectral domain

Recent Progress on Infrared Photodetectors Based on InAs and InAsSb Nanowires

MBE growth of mid-wavelength type II InAs/InAsSb superlattice photodetectors with wet etching and Al 2 O 3 passivation

Bias–selectable nBn dual–band long–/very long–wavelength infrared photodetectors based on InAs/InAs1−xSbx/AlAs1−xSbx type–II superlattices

Type-II InAs/GaSb/AlSb superlattice-based heterojunction phototransistors: back to the future

Long wavelength InAs/InAsSb superlattice barrier infrared detectors with p-type absorber quantum efficiency enhancement

Short-period InAsSb-based strained layer superlattices for high quantum efficiency long-wave infrared detectors

Material and device characterization of Type-II InAS/GaSb superlattice infrared detectors

High-Performance Midwave Type-II Superlattice Infrared Photodetectors With a Stepped InAs/GaSb Absorber

High Speed Mid-Infrared Interband Cascade Photodetector Based on InAs/GaSb Type-II Superlattice

InP-based High-Performance Extended Short Wavelength P-B-n Infrared Photodetector with InGaAs/GaAsSb Type-Ii Superlattice Absorption Layer

Long-wavelength InAs/GaSb superlattice double heterojunction infrared detectors using InPSb/InAs superlattice hole barrier

Room-temperature InAsSb pBin detectors for mid-infrared application

Interfacial Characteristics and Optical Properties of InAs/InAsSb Type II Superlattices for the Mid‐Infrared Operation

Mid-wavelength infrared focal plane array based on type II InAs/GaSb superlattices on InP substrate

Multiband strain balanced superlattice material system for third generation infrared detectors

Optical Characterization of the Interband Cascade LWIR Detectors with Type-II InAs/InAsSb Superlattice Absorber

High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection