Abstract:In recent years, quasi-1D semiconductor nanowires have attracted significant research interest in the field of optoelectronic devices. Indium arsenide (InAs) nanowire, a III–V compound semiconductor structure with a narrow band gap, shows high electron mobility and high absorption from the visible to the mid-wave infrared (MWIR), holding promise for room-temperature high-performance infrared photodetectors. Therefore, the material growth, device preparation and performance characteristics have attracted increasing attention, enabling high-sensitivity InAs nanowire photodetector from the visible to the MWIR at room temperature. This review starts by discussing the growth process of the low-dimensional structure and elementary properties of the material, such as the crystalline phase, mobility, morphology, surface states and metal contacts. Then, three solutions, including the visible-light-assisted infrared photodetection technology, vertical nanowire-array technology and band engineering by the growth of InAsSb nanowires with increasing Sb components, are elaborated to obtain longer cut-off wavelength MWIR photodetectors based on single InAs nanowire and its heterojunction structure. Finally, the potential and challenges of the state-of-the-art optoelectronic technologies for InAs nanowire MWIR photodetectors are summarized and compared, and preliminary suggestions for the technical development route and prospects are presented. This review mainly delineates the research progress of material growth, device fabrication and performance characterization of InAs nanowire MWIR photodetectors, providing a reference for the development of the next-generation high-performance photodetectors over a wide spectrum range.

InAs/InAsSb Type-II Strained-Layer Superlattice Infrared Photodetectors

Long and Very Long Wavelength InAs/InAsSb Superlattice Complementary Barrier Infrared Detectors

Mid-wavelength high operating temperature barrier infrared detector and focal plane array

InAs/GaSb Type-II superlattice (T2SL) photodetector operating in the very-long wavelength infrared (VLWIR) spectral domain

Recent Progress on Infrared Photodetectors Based on InAs and InAsSb Nanowires

MBE growth of mid-wavelength type II InAs/InAsSb superlattice photodetectors with wet etching and Al 2 O 3 passivation

Bias–selectable nBn dual–band long–/very long–wavelength infrared photodetectors based on InAs/InAs1−xSbx/AlAs1−xSbx type–II superlattices

Type-II InAs/GaSb/AlSb superlattice-based heterojunction phototransistors: back to the future

Long wavelength InAs/InAsSb superlattice barrier infrared detectors with p-type absorber quantum efficiency enhancement

Short-period InAsSb-based strained layer superlattices for high quantum efficiency long-wave infrared detectors

Material and device characterization of Type-II InAS/GaSb superlattice infrared detectors

High-Performance Midwave Type-II Superlattice Infrared Photodetectors With a Stepped InAs/GaSb Absorber

High Speed Mid-Infrared Interband Cascade Photodetector Based on InAs/GaSb Type-II Superlattice

InP-based High-Performance Extended Short Wavelength P-B-n Infrared Photodetector with InGaAs/GaAsSb Type-Ii Superlattice Absorption Layer

Long-wavelength InAs/GaSb superlattice double heterojunction infrared detectors using InPSb/InAs superlattice hole barrier

Room-temperature InAsSb pBin detectors for mid-infrared application

Interfacial Characteristics and Optical Properties of InAs/InAsSb Type II Superlattices for the Mid‐Infrared Operation

Mid-wavelength infrared focal plane array based on type II InAs/GaSb superlattices on InP substrate

Multiband strain balanced superlattice material system for third generation infrared detectors

Optical Characterization of the Interband Cascade LWIR Detectors with Type-II InAs/InAsSb Superlattice Absorber

High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection