Abstract:We report on a comprehensive temperature dependent dark current study of high-quality InGaAs/GaAs multi quantum well waveguide photodetectors monolithically integrated on silicon. They are integrated through metalorganic vapor-phase selective-area epitaxial growth in a 300-mm CMOS pilot line. Defects resulting from the metamorphic growth of III-V devices on Si make these devices susceptible to different leakage mechanisms at higher operating temperatures. For the high-temperature operation of complex photonics-electronics integrations, understanding the leakage mechanisms of the devices has critical significance. This will help to optimize designs promptly and ensure the reliability and longevity of such devices under extreme operating conditions. The photodetector devices exhibit dark currents below 1 pA, at room temperature and –1 V bias voltage, limited by the noise floor of the measurement setup. To resolve the different leakage mechanisms contributing to the dark current, the devices were measured at elevated temperatures and the results were cross-validated with device simulations. The devices exhibited very low dark currents, with a median below 0.1 nA at 195 °C, suggesting very high-quality material growth. Through device models, leakage mechanisms related to Shockley-Read-Hall (SRH) recombination at bulk volume defects are found to be the main factor contributing to the dark current. The surface SRH recombination is found to be limited, yet affecting the forward bias dark current due to the shortening of the diffusion paths of the majority carriers. Also, the device model shows that the actual dark currents at room temperature can be as low as 0.01 pA, more than 1-order lower than the measured levels. This study emphasizes the high quality of the III-V nano-ridge waveguide devices grown on Si, which can potentially expand the capabilities of silicon photonics platforms further.

Exploiting the Correlation Between 1/f Noise-Dark Current in PIN InGaAs Photodetectors

Investigation of a Noise Source and Its Impact on the Photocurrent Performance of Long-Wave-infrared InAs/GaSb Type-Ii Superlattice Detectors.

Dark Current Characterization And Simulation For In0.78ga0.22as Pin Photodetectors

Direct correlation of defects and dark currents of InGaAs/InP photodetectors

Tuning Performance Parameters of Ge-on-Si Avalanche Photodetector, Part II: Large Bias Operation

Analysis of Dark Currents and Deep Level Traps in InP- and GaAs-based in 0.83 Ga 0.17 As Photodetectors

Enhanced Low-Noise Gain from InAs Avalanche Photodiodes with Reduced Dark Current and Background Doping

Design and Fabrication of High Performance InGaAs near Infrared Photodetector

Deep-Level Traps Induced Dark Currents In Extended Wavelength Inxga1-Xas/Inp Photodetector

Temperature Dependent Low-Frequency Noise Characteristics of AlGaN Avalanche Photodiodes with Ultra-Shallow Bevel Edge Termination

Leakage Mechanisms of sub-pA InGaAs/GaAs Nano-Ridge Waveguide Photodetectors Monolithically Integrated on a 300-mm Si Wafer

Investigation of Random Telegraph Noise in the Dark Current of Germanium Waveguide Photodetector

Impact of dark current on pinned photo-diode capacitance of CMOS image sensor in low illumination regime

Deep levels analysis in wavelength extended InGaAsBi photodetector

Growth and Dark Current Analysis of GaSb- and InP-Based Metamorphic In0.8Ga0.2As Photodetectors

Investigation of low frequency noise-current correlation for the InAs/GaSb type-II superlattice long-wavelength infrared detector

Mechanism of dark current dependence on reverse voltage in mid-wavelength infrared HgCdTe mesa PIN avalanche diode

High-efficiency Normal-Incidence Vertical P-I-n Photodetectors on a Germanium-on-insulator Platform

Numerical simulation of InxGa1−xAs/InP PIN photodetector for optimum performance at 298 K

Study on dark current suppression of HgCdTe avalanche photodiodes for low flux photon detection

Low dark current Sb-based short-wavelength infrared photodetector