103 GHz germanium-on-silicon photodiode enabled by an optimized U-shaped electrode

Yang Shi,Xiang Li,Mingjie Zou,Yu Yu,Xinliang Zhang

DOI: https://doi.org/10.1364/prj.495958

IF: 7.6

2023-12-07

Photonics Research

Abstract:Yang Shi, Xiang Li, Mingjie Zou, Yu Yu, Xinliang Zhang High-performance germanium photodiodes are crucial components in silicon photonic integrated circuits for large-capacity data ... [Photon. Res. 12, 1-6 (2024)]

optics

What problem does this paper attempt to address?

Germanium Photodetector with Enhanced Photo-response at the L-band and Beyond for Integrated Photonic Applications

Yiding Lin,Danhao Ma,Kwang Hong Lee,Jin Zhou,Xin Guo,Hong Wang,Chuan Seng Tan,Jurgen Michel

DOI: https://doi.org/10.1109/group4.2018.8478713

2018-01-01

Abstract:A germanium (Ge) MSM photodetector is demonstrated with significantly-enhanced photo-response at the L-band and beyond, using SiNx stressor at the waveguide sidewalls created by a self-aligned dry etching method. This provides a CMOS-compatible solution for Ge detectors for broadband high-speed integrated photonic applications.
Grating and Hole-Array Enhanced Germanium Lateral P-I-n Photodetectors on an Insulator Platform

Hao Zhou,Qimiao Chen,Shaoteng Wu,Lin Zhang,Xin Guo,Bongkwon Son,Chuan Seng Tan

DOI: https://doi.org/10.1364/oe.449326

IF: 3.8

2022-01-01

Optics Express

Abstract:Germanium (Ge) lateral p-i-n photodetectors with grating and hole-array structures were fabricated on a Ge-on-insulator (GOI) platform. Owing to the low threading dislocation density (TDD) in the transferred Ge layer, a low dark current of 0.279 µA was achieved at -1 V. The grating structure enhances the optical absorption by guiding the lateral propagation of normal incident light, contributing to a 3× improved responsivity at 1,550 nm. Compared with the grating structure, the hole-array structure not only guides the lateral modes but also benefits the vertical resonance modes. A 4.5× higher responsivity of 0.188 A/W at 1,550 nm was achieved on the 260 nm Ge absorptive layer. In addition, both the grating and the hole-array structure attribute to a 2× and a 1.6× enhanced 3dB bandwidth at -5 V due to significantly reduced capacitance. The planar configuration of p-i-n photodiodes is favorable for large-scale monolithic integration. The incorporated surface structures offer promising approaches to reinforce the responsivity and bandwidth simultaneously, paving the way for the development of high-performance Ge photodetectors on silicon substrate.
High-efficiency Normal-Incidence Vertical P-I-n Photodetectors on a Germanium-on-insulator Platform

Yiding Lin,Kwang Hong Lee,Shuyu Bao,Xin Guo,Hong Wang,Jurgen Michel,Chuan Seng Tan

DOI: https://doi.org/10.1364/prj.5.000702

IF: 7.6

2017-01-01

Photonics Research

Abstract:In this paper, normal incidence vertical p-i-n photodetectors on a germanium-on-insulator (GOI) platform were demonstrated. The vertical p-i-n structure was realized by ion-implanting boron and arsenic at the bottom and top of the Ge layer, respectively, during the GOI fabrication. Abrupt doping profiles were verified in the transferred high-quality Ge layer. The photodetectors exhibit a dark current density of similar to 47 mA/cm(2) at -1 V and an optical responsivity of 0.39 A/W at 1550 nm, which are improved compared with state-of-the-art demonstrated GOI photodetectors. An internal quantum efficiency of similar to 97% indicates excellent carrier collection efficiency of the device. The photodetectors with mesa diameter of 60 alpha m exhibit a 3 dB bandwidth of similar to 1 GHz, which agrees well with theoretical calculations. The bandwidth is expected to improve to similar to 32 GHz with mesa diameter of 10 ae m. This work could be similarly extended to GOI platforms with other intermediate layers and potentially enrich the functional diversity of GOI for near-infrared sensing and communication integrated with Ge CMOS and mid-infrared photonics. (C) 2017 Chinese Laser Press
Germanium Photodiodes With 3-dB Bandwidths >110 GHz and L-Band Responsivity of >0.7 A/W

Daniel Steckler,Stefan Lischke,Aleksandra Kroh,Anna Peczek,Galina Georgieva,Lars Zimmermann

DOI: https://doi.org/10.1109/lpt.2024.3398359

IF: 2.6

2024-05-21

IEEE Photonics Technology Letters

Abstract:We present germanium p-i-n photodiodes with opto-electrical 3-dB bandwidths >110 GHz while exhibiting high internal responsivity >0.7 AW1 at 1620 nm wavelength. Compared to our previous work, this is an improvement of >35 % in internal responsivity without sacrificing the photo detectors bandwidths. This was achieved by the introduction of a local reduction of the silicon waveguide thickness right below the germanium body, which improves optical coupling (from the silicon waveguide into the germanium region) and confinement. In this work we study three photodiode device variants in which germanium is laterally sandwiched between complementary in-situ doped Si regions. This approach enables the side-by side realization of germanium p-i-n photodiodes with different widths, featuring different combinations of OE bandwidths and responsivities. We further investigate on the optical-power handling capabilities of these photodiodes by means of responsivity and bandwidth.

engineering, electrical & electronic,optics,physics, applied
High efficiency resonant-metasurface germanium photodetector with ultra-thin intrinsic layer

Jinwen Song,Shuai Yuan,Jinsong Xia

DOI: https://doi.org/10.48550/arXiv.1904.05744

2019-04-09

Abstract:Photodetectors at telecommunications-band with high efficiency and high speed are becoming increasingly important as the booming of big data, 5G, internet of things, cloud computing, artificial intelligence and relevent applications. Silicon-based Germanium photodetectors exhibit great potential in reducing the cost and power dissipation, due to its compatibility of monolithic integration with signal-processing electronics. We report the first demonstration of normal incident resonant-metasurface germanium photodetector, to address the trade-off between quantum efficiency, bandwidth and wavelength coverage for free-space detectors. With an ultra-thin intrinsic layer thickness of 350 nm, a high external quantum efficiency of more than 60% and clearly open eyes at the speed of 20 Gbps are achieved, for a 30 {\mu}m-diameter device. The photodetector employs multiple trapped-mode resonances to enhance the localized electromagnetic field, which not only enhances the external quantum efficiency by more than 300% at 1550 nm, but also extends to the whole C band. Further simulation and measurement with small incident spot size show the feasibility to achieve >50 GHz 3 dB bandwidth by simply reducing the mesa size, with minor sacrifice of the enhanced absorption. This work paves the way for the future development of low-cost, high efficiency normal incident germanium photodetectors operating at data rates of 50 Gbps or higher.

Instrumentation and Detectors,Optics
Germanium Photodetectors with 60-Nm Absorption Coverage Extension and ∼2× Quantum Efficiency Enhancement Across L-Band

Yiding Lin,Danhao Ma,Rui-Tao Wen,Kwang Hong Lee,Xin Guo,Jin Zhou,Hong Wang,Chuan Seng Tan,Jurgen Michel

DOI: https://doi.org/10.1109/group4.2019.8925937

2019-01-01

Abstract:Germanium-on-insulator (GOI) metal-semiconductor-metal (MSM) photodetectors were demonstrated with a 60 nm extension on the absorption coverage and a ∼2× enhancement on the quantum efficiency across the L-band.
On-chip germanium photodetector with interleaved junctions for the 2-μm wave band

Jianing Wang,Xi Wang,Yihang Li,Yanfu Yang,Qinghai Song,Ke Xu

DOI: https://doi.org/10.1364/ol.515378

IF: 3.6

2024-02-16

Optics Letters

Abstract:Jianing Wang, Xi Wang, Yihang Li, Yanfu Yang, Qinghai Song, Ke Xu Recently, the 2-μm wave band has gained increased interest due to its potential application for the next-generation optical ... [Opt. Lett. 49, 1085-1088 (2024)]

optics
Two-micron-wavelength germanium-tin photodiodes with low dark current and gigahertz bandwidth.

Yuan Dong,Wei Wang,Shengqiang Xu,Dian Lei,Xiao Gong,Xin Guo,Hong Wang,Shuh-Ying Lee,Wan-Khai Loke,Soon-Fatt Yoon,Yee-Chia Yeo

DOI: https://doi.org/10.1364/oe.25.015818

IF: 3.8

2017-01-01

Optics Express

Abstract:We report the demonstration of a germanium-tin (Ge 0.90.121-1-
Self-power, Multiwavelength Photodetector Based on Sn-doped Ge Quantum Dots / Hexagonal Silicon Nanowires Heterostructures

Linlin Fan,Lei Wang,Haiyan He,Deren Yang,Dongsheng Li

DOI: https://doi.org/10.1364/ol.524572

2024-01-01

Abstract:Tin-doped germanium quantum dots (Sn-doped Ge QDs)-decorated hexagonal silicon nanowires (h-Si NWs) were adopted to overcome the low infrared response of silicon and the excess dark current of germanium. High-quality Sn-doped Ge QDs with a narrow bandgap can be achieved through Ge-Sn co-sputtering on silicon nanowires by reducing the contact area between heterojunction materials and Sn-induced germanium crystallization. The absorption limit of the heterostructure is extended to 2.2 µm, and it is sensitive to 375-1550 nm light at 0 V, which has optimality at 1342 nm, with a photo-to-dark current ratio of over 815, a responsivity of 0.154 A/W, and a response time of 0.93 ms. The superior performance of the Sn-doped Ge QDs/h-Si NW photodetector in multiwavelength is attractive for multi-scenario applications.
High-Performance Waveguide-Integrated Bi2O2Se Photodetector for Si Photonic Integrated Circuits.

Jianghong Wu,Maoliang Wei,Jianglong Mu,Hui Ma,Chuyu Zhong,Yuting Ye,Chunlei Sun,Bo Tang,Lichun Wang,Junying Li,Xiaomin Xu,Bilu Liu,Lan Li,Hongtao Lin

DOI: https://doi.org/10.1021/acsnano.1c04359

IF: 17.1

2021-01-01

ACS Nano

Abstract:Due to the excellent electrical and optical properties and their integration capability without lattice matching requirements, low-dimensional materials have received increasing attention in silicon photonic circuits. Bi2O2Se with high carrier mobility, narrow bandgap, and good air stability is very promising for high-performance near-infrared photodetectors. Here, the chemical vapor deposition method is applied to grow Bi2O2Se onto mica, and our developed polycarbonate/polydimethylsiloxane-assisted transfer method enables the clean and intact transfer of Bi2O2Se on top of a silicon waveguide. We demonstrated the Bi2O2Se/Si waveguide integrated photodetector with a small dark current of 72.9 nA, high responsivity of 3.5 A·W-1, fast rise/decay times of 22/78 ns, and low noise-equivalent power of 15.1 pW·Hz-0.5 at an applied voltage of 2 V in the O-band for transverse electric modes. Additionally, a microring resonator is designed for enhancing light-matter interaction, resulting in a wavelength-sensitive photodetector with reduced dark current (15.3 nA at 2 V) and more than a 3-fold enhancement in responsivity at the resonance wavelength, which is suitable for spectrally resolved applications. These results promote the integration of Bi2O2Se with a silicon photonic platform and are expected to accelerate the future use of integrated photodetectors in spectroscopy, sensing, and communication applications.
Germanium Quantum Dot Infrared Photodetectors Addressed by Self-Aligned Silicon Nanowire Electrodes.

Yaolong Zhao,Lingfei Li,Shuaishuai Liu,Junzhuan Wang,Jun Xu,Yi Shi,Kunji Chen,Pere Roca I. Cabarrocas,Linwei Yu

DOI: https://doi.org/10.1088/1361-6528/ab647e

IF: 3.5

2020-01-01

Nanotechnology

Abstract:Germanium quantum dots (GeQDs), addressed by self-aligned and epitaxial silicon nanowires (SiNWs) as electrodes, represent the most fundamental and the smallest units that can be integrated into Si optoelectronics for 1550 nm wavelength detection. In this work, individual GeQD photodetectors have been fabricated based on a low temperature self-condensation of uniform amorphous Si (a-Si)/a-Ge bilayers at 300 °C, led by rolling indium (In) droplets. Remarkably, the diameter of the GeQD nodes can be independently controlled to achieve wider GeQDs for maximizing infrared absorption with narrower SiNW electrodes to ensure a high quality Ge/Si hetero-epitaxial connection. Importantly, these hetero GeQD/SiNW photodetectors can be deployed into predesigned locations for scalable device fabrication. The photodetectors demonstrate a responsivity of 1.5 mA W-1 and a photoconductive gain exceeding 102 to the communication wavelength signals, which are related to the beneficial type-II Ge/Si alignment, gradient Ge/Si epitaxial transition and a larger QD/NW diameter ratio. These results indicate a new approach to batch-fabricate and integrate GeQDs for ultra-compact Si-compatible photodetection and imaging applications.
High-efficiency GeSn/Ge Multiple-Quantum-well Photodetectors with Photon-Trapping Microstructures Operating at 2 Μm.

Hao Zhou,Shengqiang Xu,Yiding Lin,Yi-Chiau Huang,Bongkwon Son,Qimiao Chen,Xin Guo,Kwang Hong Lee,Simon Chun-Kiat Goh,Xiao Gong,Chuan Seng Tan

DOI: https://doi.org/10.1364/oe.389378

IF: 3.8

2020-01-01

Optics Express

Abstract:We introduced photon-trapping microstructures into GeSn-based photodetectors for the first time, and achieved high-efficiency photo detection at 2 µm with a responsivity of 0.11 A/W. The demonstration was realized by a GeSn/Ge multiple-quantum-well (MQW) p-i-n photodiode on a GeOI architecture. Compared with the non-photon-trapping counterparts, the patterning and etching of photon-trapping microstructure can be processed in the same step with mesa structure at no additional cost. A four-fold enhancement of photo response was achieved at 2 µm. Although the incorporation of photo-trapping microstructure degrades the dark current density which increases from 31.5 to 45.2 mA/cm2 at −1 V, it benefits an improved 3-dB bandwidth of 2.7 GHz at bias voltage at −5 V. The optical performance of GeSn/Ge MQW photon-trapping photodetector manifests its great potential as a candidate for efficient 2 µm communication. Additionally, the underlying GeOI platform enables its feasibility of monolithic integration with other photonic components such as waveguide, modulator and (de)multiplexer for optoelectronic integrated circuits (OEICs) operating at 2 µm.
High-Power Ge/Si Waveguide Photodetector

Hengzhen Cao,Yuluan Xiang,Weichao Sun,Jin Xie,Jingshu Guo,Zejie Yu,Liu,Yaocheng Shi,Daoxin Dai

DOI: https://doi.org/10.1021/acsphotonics.4c00173

IF: 7

2024-01-01

ACS Photonics

Abstract:A lateral germanium/silicon waveguide photodetector with a side-coupling structure is proposed and realized. For the present photodetector, the input light is split into four channels, which are gradually coupled into two parallel germanium waveguides by adiabatic side-coupling. In this way, uniform optical field distribution is achieved and the space-charge effect is eliminated greatly even with high optical power. The experimental results show that the responsivity is still as high as 0.68 A/W even for an input optical power of 28 mW and the saturation photocurrent is more than 19.5 mA. The present photodetector features a broad bandwidth of >40 GHz for detecting low optical power, while the bandwidth is still more than 20 GHz for the input optical power of 12.4 mW (the output current is 10.2 mA). The open eye-diagrams for receiving the 25 and 50 Gbps data are demonstrated with the photocurrents of 16 and 8.5 mA, respectively. The present side-coupling Ge/Si photodetector exhibits excellent performances for high-power detection compared with the conventional one.
High-performance Ge Photodetectors on Silicon Photonics Platform for Optical Interconnect

Tingwei Yan,Ling Li,Yufeng Zhang,Jiandong Hao,Jinchang Meng,Ningqiang Shi

DOI: https://doi.org/10.1016/j.sna.2024.115535

IF: 4.291

2024-05-31

Sensors and Actuators A Physical

Abstract:With the rapid development of 5 G communications, artificial intelligence, the Internet of Things and other fields, the increasing demand for data transmission in communication networks has resulted in optical interconnection gradually replacing traditional electrical interconnection in communication. As one of the core devices, the research and development of silicon-based photodetectors has garnered significant attention. Particularly, the advancement of germanium photodetectors (Ge PDs) holds crucial research significance for both academia and industry. Recently, a variety of high-performance photodetectors based on various photoelectric structures, emerging technologies and physical effects have been demonstrated on silicon photonic platforms. In this review, the research progress of Ge PDs is summarized, and the key technologies and processes in the latest development are analyzed. Firstly, the basic principles and performance of photodetectors are briefly introduced. Secondly, the key technology and basic structure of silicon and Ge PD are discussed. The development history of Ge PDs is then reviewed, and new mechanism design and performance improvement technologies are discussed. Finally, the current research frontiers and hotspots of high-performance Ge PDs are summarized, and the future development trends are discussed. It is hoped that this review will be helpful for readers to gain more insights into the latest advancements in high-performance photodetectors in silicon photonics and contribute to further development.

engineering, electrical & electronic,instruments & instrumentation
Waveguide-integrated PdSe2 photodetector with high responsivity and speed in the near-infrared range across the O+E+S+C bands

Jianghong Wu,Hui Ma,Chuyu Zhong,Maoliang Wei,Chunlei Sun,Yuting Ye,Yan Xu,Bo Tang,Ye Luo,Boshu Sun,Jialing Jian,Hao Dai,Hongtao Lin,Lan Li

DOI: https://doi.org/10.21203/rs.3.rs-1399761/v1

2022-01-01

Abstract:Abstract Hybrid integration of two-dimensional (2D) materials on a silicon photonic platform enables diverse exploration of novel active functions and significant improvement in device performance for next-generation silicon integrated photonic circuits. 2D transition metal dichalcogenide materials (TMDCs) have attracted extensive attention for photodetectors, but developing high-performance waveguide-integrated photodetectors based on conventionally investigated 2D TMDCs at the telecom C-band is still a big challenge because of their large optical bandgap and slow carrier mobility. Here, we propose PdSe2, a new type of 2D TMDC, to be integrated with silicon photonic components for on-chip photodetection with high responsivity and speed in the datacom and telecom optical bands ranging from the O-band to the C-band. The obtained waveguide-integrated photodetectors show a high responsivity of 1190.2 mA W−1 at 1550 nm and a low noise-equivalent power of 4.0 pW Hz-0.5 at 5V. The 3 dB bandwidth reaches up to 1.5 GHz, and the measured data rate is 2.5 Gbit s−1. The achieved PdSe2 photodetectors provide new insights to explore the integration of novel 2D TMDCs with silicon photonics and demonstrate the potential of integrated photodetectors for applications in diverse areas, including optical communications, on-chip spectroscopy, and sensing.
High-performance Ge-on-insulator lateral p-i-n waveguide photodetectors for electronic–photonic integrated circuits at telecommunication wavelengths

TZU-YANG HUANG,RADHIKA BANSAL,Soumava Ghosh,Kwang Hong Lee,Qimiao Chen,Chuan Seng Tan,Guo-En Chang,Tzu-Yang Huang,Radhika Bansal

DOI: https://doi.org/10.1364/ol.517863

IF: 3.6

2024-02-28

Optics Letters

Abstract:Tzu-Yang Huang, Radhika Bansal, Soumava Ghosh, Kwang Hong Lee, Qimiao Chen, Chuan Seng Tan, Guo-En Chang We report high-performance germanium-on-insulator (GeOI) waveguide photodetectors (WGPDs) for electronic–photonic integrated ... [Opt. Lett. 49, 1281-1284 (2024)]

optics
High-speed Ge-on-GaAs Photodetector

Linze Li,Rui Pan,Zhiyang Xie,Yao Lu,Jiaxiang Chen,Xinbo Zou,Ziyuan Yuan,Menglin Chang,Hong Lu,Baile Chen

DOI: https://doi.org/10.1364/oe.459664

IF: 3.8

2022-01-01

Optics Express

Abstract:In this work, a germanium (Ge) on gallium arsenide (GaAs) photodetector is demonstrated with the optical response from 850 nm to 1600 nm, which has potential for monolithic integration with VCSELs on GaAs platform as transceiver working beyond 900 nm. The device exhibits a responsivity of 0.35A/W, 0.39 A/W and 0.11 A/W at 1000 nm, 1310 urn and 1550 nm, respectively and dark current of 8 nA at -1 V. The 10 um diameter back-illuminated device achieves a 3-dB bandwidth of 9.3 GHz under -2 V bias. A donor-like trap at the interface between the Ge and GaAs collection layers is verified by capacitance-voltage curve and deep-level transient spectroscopy (DLTS) measurement, which impedes the depletion in GaAs collection layers. (C) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
Photo Detection and Modulation from 1,550 to 2,000 Nm Realized by a GeSn/Ge Multiple-Quantum-well Photodiode on a 300-Mm Si Substrate

Hao Zhou,Shengqiang Xu,Shaoteng Wu,Yi-Chiau Huang,Peng Zhao,Jinchao Tong,Bongkown Son,Xin Guo,Daohua Zhang,Xiao Gong,Chuan Seng Tan

DOI: https://doi.org/10.1364/oe.409944

IF: 3.8

2020-01-01

Optics Express

Abstract:A GeSn/Ge multiple-quantum-well (MQW) p-i-n photodiode structure was proposed for simultaneously realizing high detectivity photo detection with low dark current and effective optical modulation based on the quantum confined Stark (QCSE) effect. The MQW stacks were grown on a 300-mm Ge-buffered Si substrate using reduced pressure chemical vapor deposition (RPCVD). GeSn/Ge MQW p-i-n photodiodes with varying mesa diameters were fabricated and characterized. An ultralow dark current density of 16.3 mA/cm2 at -1 V was achieved as expected due to the low threading dislocation density (TDD) in pseudomorphic GeSn layer. Owing to the ultralow dark current density and high responsivity of 0.307 A/W, a high specific detectivity of 1.37×1010 cm·Hz1/2/W was accomplished at 1,550 nm, which is comparable with commercial Ge and extended-InGaAs photodetectors. Meanwhile, the bias voltage-dependent photo response was investigated from 1,700 to 2,200 nm. The extracted effective absorption coefficient of GeSn/Ge MQW shows a QCSE behavior with electric field-dependent exciton peaks from 0.688 to 0.690 eV. An absorption ratio of 1.81 under -2 V was achieved at 2 μm, which shows early promise for effective optical modulation. The high frequency response was calculated theoretically, and the predicted 3-dB bandwidth for the photodiode with a mesa diameter of 30 μm could reach 12 GHz at -2 V.
High-performance Ge-on-Si Photodetector with Optimized DBR Location.

Jishi Cui,Zhiping Zhou

DOI: https://doi.org/10.1364/ol.42.005141

2017-01-01

Abstract:We investigated the Ge-on-Si photodetector's performance enhancement by optimizing the detector length, therefore, the location of the distributed Bragg reflector (DBR). Since the unabsorbed signal light in the photodetector oscillates between the germanium and silicon layers, but the DBR is on the silicon layer, the optimized location of the DBR will result in shorter devices, with increased bandwidth, reduced dark current, and consistent responsivity. The 5 mu m long photodetector with an optimized DBR location shows responsivity of 0.72 A/W, at least 31.7 GHz 3 dB bandwidth; the dark current is only 7 nA at 1550 nm. (C) 2017 Optical Society of America
Germanium-On-Silicon Nitride Waveguides for Mid-Infrared Integrated Photonics

Wei Li,P. Anantha,Shuyu Bao,Kwang Hong Lee,Xin Guo,Ting Hu,Lin Zhang,Hong Wang,Richard Soref,Chuan Seng Tan

DOI: https://doi.org/10.1063/1.4972183

IF: 4

2016-01-01

Applied Physics Letters

Abstract:A germanium-based platform with a large core-clad index contrast, germanium-on-silicon nitride waveguide, is demonstrated at mid-infrared wavelength. Simulations are performed to verify the feasibility of this structure. This structure is realized by first bonding a silicon-nitride-deposited germanium-on-silicon donor wafer onto a silicon substrate wafer, followed by the layer transfer approach to obtain germanium-on-silicon nitride structure, which is scalable to all wafer sizes. The misfit dislocations which initially form along the interface between germanium/silicon can be removed by chemical mechanical polishing after layer transfer process resulting in a high-quality germanium layer. At the mid-infrared wavelength of 3.8 μm, the germanium-on-silicon nitride waveguide has a propagation loss of 3.35 ± 0.5 dB/cm and a bend loss of 0.14 ± 0.01 dB/bend for a radius of 5 μm for the transverse-electric mode.

103 GHz germanium-on-silicon photodiode enabled by an optimized U-shaped electrode

Germanium Photodetector with Enhanced Photo-response at the L-band and Beyond for Integrated Photonic Applications

Grating and Hole-Array Enhanced Germanium Lateral P-I-n Photodetectors on an Insulator Platform

High-efficiency Normal-Incidence Vertical P-I-n Photodetectors on a Germanium-on-insulator Platform

Germanium Photodiodes With 3-dB Bandwidths >110 GHz and L-Band Responsivity of >0.7 A/W

High efficiency resonant-metasurface germanium photodetector with ultra-thin intrinsic layer

Germanium Photodetectors with 60-Nm Absorption Coverage Extension and ∼2× Quantum Efficiency Enhancement Across L-Band

On-chip germanium photodetector with interleaved junctions for the 2-μm wave band

Two-micron-wavelength germanium-tin photodiodes with low dark current and gigahertz bandwidth.

Self-power, Multiwavelength Photodetector Based on Sn-doped Ge Quantum Dots / Hexagonal Silicon Nanowires Heterostructures

High-Performance Waveguide-Integrated Bi2O2Se Photodetector for Si Photonic Integrated Circuits.

Germanium Quantum Dot Infrared Photodetectors Addressed by Self-Aligned Silicon Nanowire Electrodes.

High-efficiency GeSn/Ge Multiple-Quantum-well Photodetectors with Photon-Trapping Microstructures Operating at 2 Μm.

High-Power Ge/Si Waveguide Photodetector

High-performance Ge Photodetectors on Silicon Photonics Platform for Optical Interconnect

Waveguide-integrated PdSe2 photodetector with high responsivity and speed in the near-infrared range across the O+E+S+C bands

High-performance Ge-on-insulator lateral p-i-n waveguide photodetectors for electronic–photonic integrated circuits at telecommunication wavelengths

High-speed Ge-on-GaAs Photodetector

Photo Detection and Modulation from 1,550 to 2,000 Nm Realized by a GeSn/Ge Multiple-Quantum-well Photodiode on a 300-Mm Si Substrate

High-performance Ge-on-Si Photodetector with Optimized DBR Location.

Germanium-On-Silicon Nitride Waveguides for Mid-Infrared Integrated Photonics