Abstract:Photodetectors at telecommunications-band with high efficiency and high speed are becoming increasingly important as the booming of big data, 5G, internet of things, cloud computing, artificial intelligence and relevent applications. Silicon-based Germanium photodetectors exhibit great potential in reducing the cost and power dissipation, due to its compatibility of monolithic integration with signal-processing electronics. We report the first demonstration of normal incident resonant-metasurface germanium photodetector, to address the trade-off between quantum efficiency, bandwidth and wavelength coverage for free-space detectors. With an ultra-thin intrinsic layer thickness of 350 nm, a high external quantum efficiency of more than 60% and clearly open eyes at the speed of 20 Gbps are achieved, for a 30 {\mu}m-diameter device. The photodetector employs multiple trapped-mode resonances to enhance the localized electromagnetic field, which not only enhances the external quantum efficiency by more than 300% at 1550 nm, but also extends to the whole C band. Further simulation and measurement with small incident spot size show the feasibility to achieve >50 GHz 3 dB bandwidth by simply reducing the mesa size, with minor sacrifice of the enhanced absorption. This work paves the way for the future development of low-cost, high efficiency normal incident germanium photodetectors operating at data rates of 50 Gbps or higher.

Germanium Photodiodes With 3-dB Bandwidths >110 GHz and L-Band Responsivity of >0.7 A/W

Germanium Photodetector with Enhanced Photo-response at the L-band and Beyond for Integrated Photonic Applications

Grating and Hole-Array Enhanced Germanium Lateral P-I-n Photodetectors on an Insulator Platform

Germanium Photodetectors with 60-Nm Absorption Coverage Extension and ∼2× Quantum Efficiency Enhancement Across L-Band

High-efficiency Normal-Incidence Vertical P-I-n Photodetectors on a Germanium-on-insulator Platform

PIC-integrable high-responsivity germanium waveguide photodetector in the C plus L band

PIC-integrable high-responsivity germanium waveguide photodetector in the C + L band.

High-Power Ge/Si Waveguide Photodetector

103 GHz germanium-on-silicon photodiode enabled by an optimized U-shaped electrode

Photo Detection and Modulation from 1,550 to 2,000 Nm Realized by a GeSn/Ge Multiple-Quantum-well Photodiode on a 300-Mm Si Substrate

High efficiency resonant-metasurface germanium photodetector with ultra-thin intrinsic layer

Waveguide-integrated PdSe2 photodetector with high responsivity and speed in the near-infrared range across the O+E+S+C bands

High-Performance Waveguide-Integrated Bi2O2Se Photodetector for Si Photonic Integrated Circuits.

Two-micron-wavelength germanium-tin photodiodes with low dark current and gigahertz bandwidth.

High-speed, zero-biased silicon-germanium photodetector

Waveguide-Integrated PdSe2 Photodetector over a Broad Infrared Wavelength Range

Self-power, Multiwavelength Photodetector Based on Sn-doped Ge Quantum Dots / Hexagonal Silicon Nanowires Heterostructures

High-speed Ge-on-GaAs Photodetector

Ge0.9sn0.1 P-I-N Photodiode With Record-High Responsivity At Two-Micron-Wavelength

High-efficiency GeSn/Ge Multiple-Quantum-well Photodetectors with Photon-Trapping Microstructures Operating at 2 Μm.

High-performance Ge-on-insulator lateral p-i-n waveguide photodetectors for electronic–photonic integrated circuits at telecommunication wavelengths