Abstract:An avalanche photodiode (APD) is a widely used device, especially in weak light detection systems like fiber optic detection. InAlAs is suitable for the fabrication of multiplication and charge layers, and has drawn more and more attention due to its low excess noise factor and large bandgap. However, the use of InAlAs as a charge layer also poses significant problems, especially in the implementation of p-type doping. In this work, we have achieved carbon-doped p-InAlAs epitaxial layers with adjustable doping concentrations by tailoring the growth parameters through a metalorganic chemical vapor deposition system. Moreover, four InGaAs/InAlAs avalanche photodiodes with a structure of a separated i-InGaAs absorption layer, p-InAlGaAs grade layer, p-InAlAs charge layer, and i-InAlAs multiplication layer (SAGCM) were prepared by tailoring the doping concentration of the p-InAlAs charge layer. When the doping concentration of the p-InAlAs charge layer is 4.13 × 10 17 cm −3 , the fabricated photodiode exhibits avalanche multiplication characteristics. The device at a doping concentration of 4.13 × 10 17 cm −3 for the p-InAlAs charge layer has good photoelectric performance, with a responsivity as high as 12.19 A/W and a multiplication factor as high as 16 at 31.9 V measured at 300 K. By analyzing the electric field distribution within the device under different doping concentrations of the p-InAlAs charge layer, we believe that the key to good device performance lies in the appropriate doping concentration of the p-InAlAs charge layer. Our work provides some ideas for realizing an APD device with high performance and low breakdown voltage.

Simple Matrix-Method Modeling for Avalanche Photodetectors with Arbitrary Layer Structures and Absorption/Multiplication Coefficients

Derivation of the Small Signal Response and Equivalent Circuit Model for a Separate Absorption and Multiplication Layer Avalanche Photodetector

Tuning Performance Parameters of Ge-on-Si Avalanche Photodetector, Part II: Large Bias Operation

Resonant normal-incidence separate-absorption-charge-multiplication Ge/Si avalanche photodiodes.

Equivalent Circuit Model of a Waveguide‐type Ge/Si Avalanche Photodetector

An Equivalent Circuit Model for Separate Absorption Grading Charge Multiplication Avalanche Photodiode

Modeling and simulation of high gain monolayer MoS<inf>2</inf> photodetector

A Modified Equivalent Circuit Model for High-Speed InGaAs/InAlAs Avalanche Photodiodes

Equivalent Circuit Model of a Ge/Si Avalanche Photodiode

Monolithic Germanium/Silicon Photodetectors with Decoupled Structures: Resonant Apds and Utc Photodiodes

Simulation of the Avalanche Process in the G-APD and Circuitry Analysis of the SiPM

High-Gain High-Sensitivity Resonant Ge/Si Apd Photodetectors

Resonant Si/Ge avalanche photodiode with an ultrahigh gain bandwidth product

A Noise Model for Multilayer Graded-Bandgap Avalanche Photodiodes

A Physics Based Multiscale Compact Model of p-i-n Avalanche Photodiodes

Theoretical Analysis for AlGaN Avalanche Photodiodes with Mesa and Field Plate Structure*

InGaAs/InAlAs avalanche photodiodes with a high responsivity and multiplication factor using carbon-doped p-InAlAs as the charge layer

Gain-Bandwidth Characteristics of Thin Avalanche Photodiodes

Simulation of avalanche time in thin GaN/4H–SiC heterojunction avalanche photodiodes

Gain and excess noise properties of 3-gain-stage InGaAs/InAlAs avalanche photodetector

Avalanche Gain Modeling Revisited in HgCdTe APDs