Equivalent Circuit Model of a Ge/Si Avalanche Photodiode

Daoxin Dai,Hui-Wen Chen,Bowers, J.E.,Yimin Kang

DOI: https://doi.org/10.1109/group4.2009.5338304

2009-01-01

Abstract:An equivalent circuit model for a separate-absorption-charge-multiplication Ge/Si avalanche photodiode is presented. The current dependence of the resonance frequency scales with square root of current, as expected.

What problem does this paper attempt to address?

Equivalent Circuit Model of a Waveguide‐type Ge/Si Avalanche Photodetector

Daoxin Dai,Hui-wen Chen,John E. Bowers,Yimin Kang,Mike Morse,Mario J. Paniccia

DOI: https://doi.org/10.1002/pssc.200983874

2010-01-01

Abstract:An equivalent circuit with an inductive element is presented for modelling a waveguide-type Ge/Si avalanche photodetector (APD) with a separate-absorption-charge-multiplication structure. A genetic algorithm optimization is used to extract the parameters for the elements included in the equivalent circuit by fitting the measured S-22. Due to a resonance in the avalanche region, there is a peak enhancement for the frequency response of the APD when the bias voltage is relatively high. This is observed in the measurement and agrees with the theoretical calculation shown in this paper. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Resonant normal-incidence separate-absorption-charge-multiplication Ge/Si avalanche photodiodes.

Daoxin Dai,Hui-Wen Chen,John E Bowers,Yimin Kang,Mike Morse,Mario J Paniccia

DOI: https://doi.org/10.1364/OE.17.016549

IF: 3.8

2009-01-01

Optics Express

Abstract:In this work the impedance of separate-absorption-charge-multiplication Ge/Si avalanche photodiodes (APD) is characterized over a large range of bias voltage. An equivalent circuit with an inductive element is presented for modeling the Ge/Si APD. All the parameters for the elements included in the equivalent circuit are extracted by fitting the measured S-22 with the genetic algorithm optimization. Due to a resonance in the avalanche region, the frequency response of the APD has a peak enhancement when the bias voltage is relatively high, which is observed in the measurement and agrees with the theoretical calculation shown in this paper. (C) 2009 Optical Society of America
An Equivalent Circuit Model for Separate Absorption Grading Charge Multiplication Avalanche Photodiode

Yanli Zhao,Qiuyan Mo

DOI: https://doi.org/10.1088/1742-6596/276/1/012107

2011-02-01

Journal of Physics: Conference Series

Abstract:With the scale of microwave photonics system getting larger and the structure of it getting more complex, the CAD tools and accurate circuit models have become essential for designers, since difficulty for system design increases greatly. In this work, an equivalent circuit model for separate absorption grading charge multiplication avalanche photodiode (SAGCM APD) has been proposed. The model is applied to simulate the device performance and the simulating results show a well reasonable agreement with the physical model calculation and experimental data. A detailed comparison has been made for InP/InGaAs, InAlAs/InGaAs and Si/Ge APD with different structures. Our results show that Si/Ge APD is the most promising candidate for high performance optical communication system.
Tuning Performance Parameters of Ge-on-Si Avalanche Photodetector, Part II: Large Bias Operation

Yanning Chen,Fang Liu,Yali Shao,Yingzong Liang,Sichao Du,Wen-Yan Yin

DOI: https://doi.org/10.1109/access.2024.3449098

IF: 3.9

2024-01-01

IEEE Access

Abstract:The carrier multiplication phenomenon involves hot carriers, which gain kinetic energy while accelerating to equilibrium with the established avalanching electric fields, and is typically explained via the local avalanche model. This work presents two vertical Ge-on-Si avalanche photodetectors fabricated in a separate absorption, charge, and multiplication configuration. Uniformity in materials, doping densities, and device dimensions is maintained, except for the multiplication width, which is used as a control parameter to manipulate avalanching fields under identical electric biasing and illumination schemes. Nonlocal carrier multiplication model is implemented during analysis of the extracted current-voltage signatures under small and large reverse biasing arrangements. For such an APD characterized by thinner multiplication region (W-m=0.1 mu m), reduced linear and Geiger-mode multiplication regimes are perceived to be at play, outperforming the device having thicker multiplication region in almost all related figures of merit, e.g., responsivity (22.58 /W), photo-to-dark current ratio (similar to 10(5)), normalized photo-to-dark current ratio (2.5x 10(9) W-1) , specific detectivity (7.45x 10(12)Jones) , and noise equivalent power (similar to 2.42x 10(-15) W/root Hz) . The enhanced performance characteristics are due to excessively strong avalanching fields, reduced thermal charge density, and negligible dead space compared to its counterpart characterized by thicker multiplication width.
A Compact Model for Si-Ge Avalanche Photodiodes

Binhao Wang,Zhihong Huang,Xiaoge Zeng,Rui Wu,Wayne Sorin,Di Liang,Raymond G. Beausoleil

DOI: https://doi.org/10.1109/group4.2018.8478743

2018-01-01

Abstract:A compact Si-Ge avalanche photodiode (APD) circuit model, including carrier transit time and electrical parasitics, is demonstrated and accurately captures electrical and optical dynamics in a wide range of multiplication gain. Excellent matching between simulated and measured 30 Gb/s eye diagrams is presented.
Simple Matrix-Method Modeling for Avalanche Photodetectors with Arbitrary Layer Structures and Absorption/Multiplication Coefficients

Daoxin Dai,John E. Bowers

DOI: https://doi.org/10.1109/jlt.2010.2042279

IF: 4.7

2010-01-01

Journal of Lightwave Technology

Abstract:A simple matrix-method model is presented for calculating the impedance and the short-circuit frequency response of an avalanche photodiode (APD) with arbitrary layer structures and absorption/multiplication coefficients. In our matrix method model, the depletion region of the APD is divided into many thin layers. In each thin layer the absorption and the multiplication coefficients are assumed to be uniform. As an example, we use this matrix-method model to analyze in detail a resonant Ge/Si SACM (separated absorption charge multiplication) APD. The impedance analysis shows that the avalanche region is equivalent to an LCR-circuit including a negative resistance, an inductance with a series resistance, and a capacitance in parallel connection. At higher bias voltages, the negative resistance and series resistance become very small and consequently the LCR circuit shows a strong resonance. Furthermore, the inductance also becomes smaller at higher bias voltages, which introduces a higher resonance frequency. This increases the 3 dB-bandwidth, in agreement with experiment.
Derivation of the Small Signal Response and Equivalent Circuit Model for a Separate Absorption and Multiplication Layer Avalanche Photodetector

Daoxin Dai,Mark J. W. Rodwell,John E. Bowers,Yimin Kang,Mike Morse

DOI: https://doi.org/10.1109/JSTQE.2009.2038497

2010-01-01

Abstract:A small signal analysis for a separate-absorption-charge-multiplication (SACM) avalanche photodetector (APD) is presented for the general case when the electrons and the holes have different ionization coefficients and different velocities. The analytic expressions for the impedance and frequency response are given and a simplified equivalent circuit (including an inductance with a series resistance in parallel with a capacitance) for the APD is obtained. The calculation and experimental results show that the impedance of the APD operated at high bias voltages has a maximal value at a certain frequency due to the resonance of the LC-circuit, and this is the origin for a peak-enhancement of the frequency response.
A Modified Equivalent Circuit Model for High-Speed InGaAs/InAlAs Avalanche Photodiodes

Rui Wang,Xiaohong Yang,Hui Wang,Tingting He,Yongsheng Tang

DOI: https://doi.org/10.1109/jlt.2022.3146566

IF: 4.7

2022-05-01

Journal of Lightwave Technology

Abstract:In this paper, we establish a modified equivalent circuit model suitable for all bias conditions for high-speed InGaAsInAlAs avalanche photodiodes (APDs). The model includes three mechanisms: the carrier transit time, the avalanche buildup time, and the RC time constant. The physical meaning of each component in it is elaborated in detail. Component parameters in it of the demonstrated APD are extracted by fitting the RF reflection parameters S22 and transmission parameters S21 measured at different bias voltages. To verify the accuracy and regularity of these parameters, some relevant finite element simulations and theoretical analyses are carried out. Values and regularities of these parameters are consistent with the results of finite element simulations and theoretical analyses. With the help of this model and these accurate parameters, impedance distribution and bandwidth limiting factors of the demonstrated APD are analyzed thoroughly. According to the above analysis results, the performance optimization scheme for the demonstrated APD is obtained.

engineering, electrical & electronic,optics,telecommunications
Monolithic Germanium/Silicon Photodetectors with Decoupled Structures: Resonant Apds and Utc Photodiodes

Daoxin Dai,Molly Piels,John E. Bowers

DOI: https://doi.org/10.1109/jstqe.2014.2322443

IF: 4.9

2014-01-01

IEEE Journal of Selected Topics in Quantum Electronics

Abstract:The Ge/Si system is useful to realize avalanche photodetectors (APDs) operating at 1310 similar to 1550 nm because of the intrinsic advantages of complementary metal-oxide-semiconductor (CMOS) compatibility, high light-absorption of Ge, low ionization rate ratio of silicon, and high thermal conductivities of Si and Ge. With the Ge/Si system, it is convenient to realize photodetectors with decoupled structures including resonant Ge/Si APDs as well as uni-traveling carrier (UTC) photodiodes. The resonant Ge/Si APD with a separated absorption-charge-multiplication (SACM) structure, which decouples the light absorption and avalanche process, has high speed, high gain, and high gain-bandwidth product. The UTC photodiode, which decouples the light absorption and the carrier collection, is useful for high-power applications. This paper first reviews the structure and model of decoupled Ge/Si (A) PDs, particularly, the equivalent circuit models for explaining the peak enhancement of the frequency response in resonant SACM APDs. This model is also applied to UTC Ge/Si PDs developed recently for the high-power applications.
Simulation of the Avalanche Process in the G-APD and Circuitry Analysis of the SiPM

V. M. Grebenyuk,A. I. Kalinin,Nguyen Manh Shat,A.K. Zhanusov,V. A. Bednyakov

DOI: https://doi.org/10.48550/arXiv.0903.1161

2009-03-06

Abstract:The discrete modeling of the Geiger-mode APD is considered. Results of modeling and experimental measurements with the SiPM show that the known formula for the charge of the avalanche pulse Q=dU*Cd underestimates its value. In addition, it is seen from the dynamic of the avalanche multiplication that the resistor Rq in photodiode, usually called a quenching resistor, in reality fulfills only the restoring function. The SiPM restoring time, taken into account the number of pixel N and the load resistance R, is T=Cd*(Rq+NR).

Instrumentation and Detectors
Equivalent Circuit Model of the RF Characteristics of Multi-Stage Infrared Photodetectors

Baile Chen

DOI: https://doi.org/10.1109/jlt.2022.3171812

IF: 4.7

2022-08-01

Journal of Lightwave Technology

Abstract:Multi-stage infrared photodetectors such as quantum cascade detectors (QCDs) and interband cascade infrared photodetectors (ICIP) have been demonstrated with high detectivity and high-frequency operation. In the previous work published by Rui. Q. Yang [Applied Physics Letters 2021, 119 (14), 141107], an equivalent circuit model is used to derive the relation among quantum efficiency, collection efficiency, and particle conversion efficiency. The ultimate detectivities in multi-stage infrared photodetectors were discussed based on that model. However, the RF performance of multi-stage infrared photodetectors was rarely studied theoretically so far. In this work, a generalized equivalent circuit model is proposed with the AC term included. The detailed calculations and relevant discussion are provided to show how the normalized frequency response function of each stage impacts the overall 3 dB performance of the device. In the limit of weak absorption, such as QCDs or ICIP with very weak and identical absorption in each stage, the multi-stage infrared photodetectors show significant improvement in RF performance. Moreover, how the current mismatching issue between stages impacts 3 dB bandwidth performance quantitatively is derived and discussed for identical absorption stages architecture. The result and insights gained from this work can be beneficial for the understanding and optimization of high-speed multi-stage detectors.

engineering, electrical & electronic,optics,telecommunications
High-Gain High-Sensitivity Resonant Ge/Si Apd Photodetectors

john e bowers,daoxin dai,yimin kang,mike morse

DOI: https://doi.org/10.1117/12.855030

2010-01-01

Abstract:In this paper we present a separate-absorption-charge-multiplication Ge/Si avalanche photodiode, which has a high gain-bandwidth product (e. g., >860GHz at a wavelength of 1310nm). Such a high gain-bandwidth product is attributed to the peak enhancement of the frequency response at the high frequency range. From a small signal analysis, we establish an equivalent circuit model which includes a capacitance parallel connected with an inductance due to the avalanche process. When the APD operates at high bias voltages, the LC circuit provides a resonance in the avalanche, which introduces a peak enhancement.
Analysis of APD Characteristics Based on Equivalent Circuit Model

Qi Ying-ying

Abstract:In order to explore the characteristics of the avalanche photodetector(APD),the paper uses the equivalent circuit model of APD to simulate the characteristics of avalanche photodiode detector.Through the study of carrier rate equation,dark current,noise current and parasitic parameters etc.The paper obtained the equivalent circuit model of the APD,and carried on some analyzes using this model and the PSpice software to the relationship of light and dark current with reverse voltage,the impulse response characteristics and the frequency response characteristics,the noise current characteristics,the Electro-optical characteristics with different incident light power,and the relationship between photocurrent and the intensity of the received light.

Physics,Engineering
An Equivalent-Circuit Model of Planar GaAs Schottky Diode for Terahertz Application

Sensong Shen,Mengxia Yu,Senlin Zhang,Xiangou Zhang,Jun Xu

DOI: https://doi.org/10.1109/icccas.2018.8768934

2018-01-01

Abstract:In this paper, an equivalent-circuit model including detailed parasitic parameters of a planar anti-parallel GaAs Schottky diode is proposed for Terahertz application. The 3D electromagnetic model is established according to the actual geometry of diode to extract diode parameters simultaneously. Combined with empirical equivalent circuit model, equivalent circuit model and 3D electromagnetic model, the parameters of diode can be extracted completely and accurately. These models can be used for the design of terahertz circuits.
Modified photodiode equivalent circuit model considering coplanar waveguide electrodes

Tonghui Li,Xiaofeng Duan,Gongqing Li,Ke Li,Weifang Yuan,Kai Liu,Yongqing Huang

DOI: https://doi.org/10.1088/1361-6641/acdc48

IF: 2.048

2023-06-08

Semiconductor Science and Technology

Abstract:Accurate equivalent circuit models can assist in better analysing the performance of photodetectors. This study proposes a modified photodiode equivalent circuit model that considers coplanar waveguide (CPW) electrodes. First, the CPW electrodes of the photodiode are analysed using high-frequency structure simulation software and advanced design simulation software. Skin effect occurs inside the electrode at high frequencies, increasing the photodiode loss and reducing the bandwidth. Subsequently, the extraction formula for the proposed model is derived, and the proposed model is compared with two conventional CPW electrode models. The proposed model effectively eliminates the frequency-dependency issue in the parameter extraction process of previous models, thereby demonstrating its accuracy. Furthermore, simulation and experimental results validate the reliability of the proposed model. Among the entire frequency band, the proposed model has good stability and a low error rate and can achieve excellent fitting with the measured results. Compared with previous studies, the average error rate is reduced by over 10%, demonstrating a significant improvement. Finally, the influence of the skin effect and high-impedance transmission lines on photodiode performance is analysed and a viable approach to improve the bandwidth of photodiodes is proposed. The proposed model provides a viable approach to model and optimise CPW structures and is significant for the design of high-performance photodiodes.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter
Gain and excess noise properties of 3-gain-stage InGaAs/InAlAs avalanche photodetector

Tong Sun,Zi H. Wang,Gang Liu,Xue Y. Yang,Mei Q. Du,Feng Zhou,Peng F. Lu

DOI: https://doi.org/10.1016/j.physb.2024.415866

2024-01-01

Abstract:-We constructed a model for a 3 -stage InGaAs/InAlAs avalanche photodiode using numerical simulations based on the gain -noise mechanism. The contact layer, barrier layer, charge layer and multiplication layer of this model are optimized accordingly. The performance of the device can be improved by optimizing the thickness and doping concentration of the contact layer, increasing the thickness of the charge layer, and adding a barrier layer. At the same time, the addition of double heterojunction structure makes the performance of the device better, which enables a higher impact ionization rate of the multiplication layer. According to DSMT theory calculation results, the optimized 3 -gain -stage device's gain is 90, and the excess noise factor is about 3.1. Compared with the 10 -stage avalanche photodiode (with an excess noise factor of 5) studied at the same gain, this work shows higher performance at the lower stage. The optimized structure can provide design and optimization ideas for more stages of avalanche photodiode to increase gain and reduce excess noise.
Dependence of Ge/Si Avalanche Photodiode Performance on the Thickness and Doping Concentration of the Multiplication and Absorption Layers

Hazem Deeb,Kristina Khomyakova,Andrey Kokhanenko,Rahaf Douhan,Kirill Lozovoy

DOI: https://doi.org/10.3390/inorganics11070303

2023-07-15

Inorganics

Abstract:In this article, the performance and design considerations of the planar structure of germanium on silicon avalanche photodiodes are presented. The dependences of the breakdown voltage, gain, bandwidth, responsivity, and quantum efficiency on the reverse bias voltage for different doping concentrations and thicknesses of the absorption and multiplication layers of germanium on the silicon avalanche photodiode were simulated and analyzed. The study revealed that the gain of the avalanche photodiode is directly proportional to the thickness of the multiplication layer. However, a thicker multiplication layer was also associated with a higher breakdown voltage. The bandwidth of the device, on the other hand, was inversely proportional to the product of the absorption layer thickness and the carrier transit time. A thinner absorption layer offers a higher bandwidth, but it may compromise responsivity and quantum efficiency. In this study, the dependence of the photodetectors’ operating characteristics on the doping concentration used for the multiplication and absorption layers is revealed for the first time.
A Physics Based Multiscale Compact Model of p-i-n Avalanche Photodiodes

Sheikh Z. Ahmed,Samiran Ganguly,Yuan Yuan,Jiyuan Zheng,Yaohua Tan,Joe C. Campbell,Avik W. Ghosh

DOI: https://doi.org/10.1109/JLT.2021.3068265

2021-02-09

Abstract:III-V material based digital alloy Avalanche Photodiodes (APDs) have recently been found to exhibit low noise similar to Silicon APDs. The III-V materials can be chosen to operate at any wavelength in the infrared spectrum. In this work, we present a physics-based SPICE compatible compact model for APDs built from parameters extracted from an Environment-Dependent Tight Binding (EDTB) model calibrated to ab-initio Density Functional Theory (DFT) and Monte Carlo (MC) methods. Using this approach, we can accurately capture the physical characteristics of these APDs in integrated photonics circuit simulations.

Instrumentation and Detectors,Materials Science
Resonant Si/Ge avalanche photodiode with an ultrahigh gain bandwidth product

john e bowers,daoxin dai,wissem sfar zaoui,yimin kang,michael t morse

DOI: https://doi.org/10.1109/PHOTWTM.2010.5421935

2010-01-01

Abstract:A resonant Ge/Si APD with the SACM (separate-absorption-charge-multiplication) structure is presented. Due to the resonance effect in the avalanche region, the Ge/Si APD shows an ultra-high gain-band products (GBP) (860 GHz). This may make it possible to generate electrical data directly without a TIA (trans-impedance-amplifier). Consequently, the receiver based on the resonant Ge/Si APD may be cheaper, smaller and lower power than existing approaches.
An Equivalent Circuit Model for Uni-Traveling-Carrier Photodiode

Junjie Yang,Jianhao Ren,Xusheng Tang,Zhihong Feng

DOI: https://doi.org/10.1145/3508297.3508325

2021-12-03

Abstract:In this paper, an improved equivalent circuit model for millimeter-wave characterization of the uni-traveling-carrier photodiode (UTC-PD) device is presented, which plays an indispensable role in the improvement of its structure and performance. A de-embedding technique is proposed to extract the original characteristics of UTC-PD, which takes coupling parasitic effects into account. Moreover, we propose a set of characteristic functions according to the equivalent circuit model of UTC-PD and an analytical approach to extract model parameters is then derived based on aforementioned characteristic functions, which is more consistent with the physical meaning of the model and avoids the problem of multi-valued solution using software fitting. A high precision fit between simulated and measured S-parameters can be achieved up to 40 GHz. Therefore, the equivalent circuit model can provide guidance for the design of integrated circuits containing UTC-PD and the study of their matching circuits.

Equivalent Circuit Model of a Ge/Si Avalanche Photodiode

Equivalent Circuit Model of a Waveguide‐type Ge/Si Avalanche Photodetector

Resonant normal-incidence separate-absorption-charge-multiplication Ge/Si avalanche photodiodes.

An Equivalent Circuit Model for Separate Absorption Grading Charge Multiplication Avalanche Photodiode

Tuning Performance Parameters of Ge-on-Si Avalanche Photodetector, Part II: Large Bias Operation

A Compact Model for Si-Ge Avalanche Photodiodes

Simple Matrix-Method Modeling for Avalanche Photodetectors with Arbitrary Layer Structures and Absorption/Multiplication Coefficients

Derivation of the Small Signal Response and Equivalent Circuit Model for a Separate Absorption and Multiplication Layer Avalanche Photodetector

A Modified Equivalent Circuit Model for High-Speed InGaAs/InAlAs Avalanche Photodiodes

Monolithic Germanium/Silicon Photodetectors with Decoupled Structures: Resonant Apds and Utc Photodiodes

Simulation of the Avalanche Process in the G-APD and Circuitry Analysis of the SiPM

Equivalent Circuit Model of the RF Characteristics of Multi-Stage Infrared Photodetectors

High-Gain High-Sensitivity Resonant Ge/Si Apd Photodetectors

Analysis of APD Characteristics Based on Equivalent Circuit Model

An Equivalent-Circuit Model of Planar GaAs Schottky Diode for Terahertz Application

Modified photodiode equivalent circuit model considering coplanar waveguide electrodes

Gain and excess noise properties of 3-gain-stage InGaAs/InAlAs avalanche photodetector

Dependence of Ge/Si Avalanche Photodiode Performance on the Thickness and Doping Concentration of the Multiplication and Absorption Layers

A Physics Based Multiscale Compact Model of p-i-n Avalanche Photodiodes

Resonant Si/Ge avalanche photodiode with an ultrahigh gain bandwidth product

An Equivalent Circuit Model for Uni-Traveling-Carrier Photodiode