Abstract:The carrier multiplication phenomenon involves hot carriers, which gain kinetic energy while accelerating to equilibrium with the established avalanching electric fields, and is typically explained via the local avalanche model. This work presents two vertical Ge-on-Si avalanche photodetectors fabricated in a separate absorption, charge, and multiplication configuration. Uniformity in materials, doping densities, and device dimensions is maintained, except for the multiplication width, which is used as a control parameter to manipulate avalanching fields under identical electric biasing and illumination schemes. Nonlocal carrier multiplication model is implemented during analysis of the extracted current-voltage signatures under small and large reverse biasing arrangements. For such an APD characterized by thinner multiplication region (W-m=0.1 mu m), reduced linear and Geiger-mode multiplication regimes are perceived to be at play, outperforming the device having thicker multiplication region in almost all related figures of merit, e.g., responsivity (22.58 /W), photo-to-dark current ratio (similar to 10(5)), normalized photo-to-dark current ratio (2.5x 10(9) W-1) , specific detectivity (7.45x 10(12)Jones) , and noise equivalent power (similar to 2.42x 10(-15) W/root Hz) . The enhanced performance characteristics are due to excessively strong avalanching fields, reduced thermal charge density, and negligible dead space compared to its counterpart characterized by thicker multiplication width.

Analysis of APD Characteristics Based on Equivalent Circuit Model

A Modified Equivalent Circuit Model for High-Speed InGaAs/InAlAs Avalanche Photodiodes

Analysis of noise and its characteristics in avalanche photodiode

Equivalent Circuit Model of a Waveguide‐type Ge/Si Avalanche Photodetector

An Equivalent Circuit Model for Separate Absorption Grading Charge Multiplication Avalanche Photodiode

Tuning Performance Parameters of Ge-on-Si Avalanche Photodetector, Part II: Large Bias Operation

A Compact Model for Si-Ge Avalanche Photodiodes

APD Circuit System for Weak Signal Detection under Strong Interference

Single-photon Time Response of Reach-Through APD

Noise Characteristic Of Algan Based Solar-Blind Uv Avalanche Photodiodes

Derivation of the Small Signal Response and Equivalent Circuit Model for a Separate Absorption and Multiplication Layer Avalanche Photodetector

Equivalent Circuit Model of a Ge/Si Avalanche Photodiode

Dark Current and Noise Analysis for Long-wavelength Infrared HgCdTe Avalanche Photodiodes

Resonant normal-incidence separate-absorption-charge-multiplication Ge/Si avalanche photodiodes.

Device design of planner PIN HgCdTe avalanche photodiode

A Comprehensive and Accurate Analytical SPAD Model for Circuit Simulation

A Physics Based Multiscale Compact Model of p-i-n Avalanche Photodiodes

Spectral Response Characterization of Avalanche Photodiode

Simple Matrix-Method Modeling for Avalanche Photodetectors with Arbitrary Layer Structures and Absorption/Multiplication Coefficients

Simulation of the Avalanche Process in the G-APD and Circuitry Analysis of the SiPM

Characteristics of Thin InAlAs Digital Alloy Avalanche Photodiodes.