Abstract:High-sensitivity and high-bandwidth receivers are always demanded for high-speed optical link systems. As a key element, an avalanche photodiode (APD) is often regarded as one of the most attractive options for achieving high sensitivity owing to the potential high internal gain. In this paper, a 48-GHz waveguide Ge/Si avalanche photodiode operating at the O-band (1310 nm) is designed with a lateral reach-through structure and fabricated with simplified processes. The fabricated APD shows a high primary responsivity of 0.93 A/W at the unit-gain voltage of -4.7 V. It has an avalanche gain of 12.8 and a record gain-bandwidth product of similar to 615 GHz with an input optical power of -15 dBm when operating at a bias voltage of -14 V. The present Ge/Si APD is used successfully for high-speed data receiving, showing a sensitivity improvement about 7.6 dB for KP4-FEC operation (i.e., BER = 2.4 x 10(-4)) with 50 Gbps non-return-to-zero (NRZ) data, compared with the case of using the reference PIN PD on the same chip. The sensitivity of the receiver with the present APD for NRZ signals is about -21.3 dBm, -17.8 dBm, and -12.6 dBm for KP4-FEC operation with different data rates of 50 Gbps, 80 Gbps, and 100 Gbps, while the sensitivity for four-level pulse amplitude modulation signals is about -13.2 dBm and -11.3 dBm for KP4-FEC operation with different data rates of 25 and 50 Gbaud. Such high-performance APDs pave the way to achieve high-speed and high-sensitivity data transmissions. (c) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement

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Equivalent Circuit Model of a Ge/Si Avalanche Photodiode

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Tuning Performance Parameters of Ge-on-Si Avalanche Photodetector, Part II: Large Bias Operation

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Simple Matrix-Method Modeling for Avalanche Photodetectors with Arbitrary Layer Structures and Absorption/Multiplication Coefficients

High-Gain High-Sensitivity Resonant Ge/Si Apd Photodetectors

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Simulation of the Avalanche Process in the G-APD and Circuitry Analysis of the SiPM

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Resonant Si/Ge avalanche photodiode with an ultrahigh gain bandwidth product

Gain and excess noise properties of 3-gain-stage InGaAs/InAlAs avalanche photodetector

High-Performance Waveguide-Integrated Ge/Si Avalanche Photodetector with Lateral Multiplication Region

High-speed waveguide Ge/Si avalanche photodiode with a gain-bandwidth product of 615 GHz

Modified photodiode equivalent circuit model considering coplanar waveguide electrodes

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Small-Signal Equivalent Circuit Modeling of a Photodetector Chip