Abstract:High-sensitivity and high-bandwidth receivers are always demanded for high-speed optical link systems. As a key element, an avalanche photodiode (APD) is often regarded as one of the most attractive options for achieving high sensitivity owing to the potential high internal gain. In this paper, a 48-GHz waveguide Ge/Si avalanche photodiode operating at the O-band (1310 nm) is designed with a lateral reach-through structure and fabricated with simplified processes. The fabricated APD shows a high primary responsivity of 0.93 A/W at the unit-gain voltage of -4.7 V. It has an avalanche gain of 12.8 and a record gain-bandwidth product of similar to 615 GHz with an input optical power of -15 dBm when operating at a bias voltage of -14 V. The present Ge/Si APD is used successfully for high-speed data receiving, showing a sensitivity improvement about 7.6 dB for KP4-FEC operation (i.e., BER = 2.4 x 10(-4)) with 50 Gbps non-return-to-zero (NRZ) data, compared with the case of using the reference PIN PD on the same chip. The sensitivity of the receiver with the present APD for NRZ signals is about -21.3 dBm, -17.8 dBm, and -12.6 dBm for KP4-FEC operation with different data rates of 50 Gbps, 80 Gbps, and 100 Gbps, while the sensitivity for four-level pulse amplitude modulation signals is about -13.2 dBm and -11.3 dBm for KP4-FEC operation with different data rates of 25 and 50 Gbaud. Such high-performance APDs pave the way to achieve high-speed and high-sensitivity data transmissions. (c) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement

10 Gbps silicon waveguide-integrated infrared avalanche photodiode

Avalanche-Enhanced Photocurrents in Pin Silicon Waveguides at 1550 Nm Wavelength

Monolithic silicon waveguide photodiode utilizing surface-state absorption and operating at 10 Gb/s

High-performance waveguide Ge/Si avalanche photodiode with a lateral separate-absorption-charge-multiplication structure

High-performance Waveguide Ge/Si Avalanche Photodiode with Simplified Fabrication Processes

High-speed waveguide Ge/Si avalanche photodiode with a gain-bandwidth product of 615 GHz

Waveguide Ge/Si Avalanche Photodetector with Ultra-High Gain-Bandwidth Product of 1440Ghz

Monolithic Ge/Si avalanche photodiodes

Avalanche photodiode with ultrahigh gain–bandwidth product of 1,033 GHz

Fabrication of A 10 Gb/S Ingaas/Inp Avalanche Photodiode with an Algainas/Inp Distributed Bragg Reflector

Silicon Photonic Micro-Ring Modulator-based 4 x 112 Gb/s O-band WDM Transmitter with Ring Photocurrent-based Thermal Control in 28nm CMOS

Avalanche photodiodes on silicon photonics

High-speed III-V nanowire photodetector monolithically integrated on Si

Monolithically Integrated Waveguide-Coupled Single-Photon Avalanche Photodetector in a Visible-Light Silicon Photonics Platform

High-Bandwidth Zero-Biased Waveguide-Integrated p-n Homojunction Graphene Photodetectors on Silicon for a Wavelength Band of 1.55 m and Beyond

High-Performance Waveguide-Integrated Ge/Si Avalanche Photodetector with Lateral Multiplication Region

Waveguide-Integrated PdSe2 Photodetector over a Broad Infrared Wavelength Range

Top-Illuminated Annular Ge-on-Si APD in 45-nm Lateral SOI Process With High Gain–Bandwidth Product at 4 V Reverse Bias

High-Performance Lateral Avalanche Photodiode Based on Silicon-on-Insulator Structure

High-Speed and High-Responsivity Silicon/Black-Phosphorus Hybrid Plasmonic Waveguide Avalanche Photodetector

High-Speed Receiver Based on Waveguide Germanium Photodetector Wire-Bonded to 90nm Soi Cmos Amplifier