High-performance Waveguide Ge/Si Avalanche Photodiode with Simplified Fabrication Processes

Yuluan Xiang,Hengzhen Cao,Chaoyue Liu,Daoxin Dai

DOI: https://doi.org/10.1364/acpc.2021.t1d.4

2021-01-01

Abstract:A high-performance waveguide Ge/Si avalanche photodiode is designed and fabricated with simplified processes, showing a high primary responsivity of 0.96 A/W, a 3dB bandwidth of 27 GHz. A 50 Gbps data transmission is also demonstrated.

What problem does this paper attempt to address?

Avalanche-Enhanced Photocurrents in Pin Silicon Waveguides at 1550 Nm Wavelength

Zhao Yong,Xu Chao,Jiang Xiaoqing,Ge Huiliang

DOI: https://doi.org/10.1088/1674-4926/34/6/064009

2013-01-01

Journal of Semiconductors

Abstract:The photocurrent effect in pin silicon waveguides at 1550 nm wavelength is experimentally investigated. The photocurrent is mainly attributed to surface-state absorption,defect-state absorption and/or two-photon absorption.Experimental results show that the photocurrent is enhanced by the avalanche effect.A pin silicon waveguide with an intrinsic region width of 3.4μm and a length of 2000μm achieves a responsivity of 4.6 mA/W and an avalanche multiplication factor of about five.
High-performance waveguide Ge/Si avalanche photodiode with a lateral separate-absorption-charge-multiplication structure

Yuluan Xiang,Hengzhen Cao,Chaoyue Liu,Daoxin Dai

DOI: https://doi.org/10.1364/OE.450618

IF: 3.8

2022-01-01

Optics Express

Abstract:A high-performance waveguide Ge/Si avalanche photodiode operating at the O-band (1310 nm) is designed with a Ge/Si ridge waveguide defined by two shallow trenches in the active region and fabricated with simplified processes. The device shows a high primary responsivity of 0.96 A/W at the unit-gain voltage of -7.5 V. It has a large 3-dB bandwidth of >27 GHz and a low dark current of 1.8 mu A at a reverse bias voltage of -13 V. When the present Ge/Si APD is used for receiving 25 Gbps data, the eye-diagram is open even for an optical power as low as -18 dBm. Furthermore, 50 Gbps data receiving is also demonstrated with an input optical power of -15 dBm, showing the great potential of the present Ge/Si APD for the application in future high-speed data transmission systems. (C) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
Waveguide Si-Ge Avalanche Photodiode Based on Hole-Generated Impact Ionization.

Zhibin Jiang,Yu,Yilun Wang,De Zhou,Wentao Deng,Xinliang Zhang

DOI: https://doi.org/10.1364/ofc.2019.w2a.8

2019-01-01

Abstract:We report a waveguide Si-Ge avalanche photodiode using zero-change foundry processing. A 182 GHz gain-bandwidth product with a responsivity of 11.2 A/W at 1550 nm is experimentally demonstrated through hole-generated impact ionization.
High-speed waveguide Ge/Si avalanche photodiode with a gain-bandwidth product of 615 GHz

Yuluan Xiang,Hengzhen Cao,Chaoyue Liu,Jingshu Guo,Daoxin Dai

DOI: https://doi.org/10.1364/OPTICA.462609

IF: 10.4

2022-01-01

Optica

Abstract:High-sensitivity and high-bandwidth receivers are always demanded for high-speed optical link systems. As a key element, an avalanche photodiode (APD) is often regarded as one of the most attractive options for achieving high sensitivity owing to the potential high internal gain. In this paper, a 48-GHz waveguide Ge/Si avalanche photodiode operating at the O-band (1310 nm) is designed with a lateral reach-through structure and fabricated with simplified processes. The fabricated APD shows a high primary responsivity of 0.93 A/W at the unit-gain voltage of -4.7 V. It has an avalanche gain of 12.8 and a record gain-bandwidth product of similar to 615 GHz with an input optical power of -15 dBm when operating at a bias voltage of -14 V. The present Ge/Si APD is used successfully for high-speed data receiving, showing a sensitivity improvement about 7.6 dB for KP4-FEC operation (i.e., BER = 2.4 x 10(-4)) with 50 Gbps non-return-to-zero (NRZ) data, compared with the case of using the reference PIN PD on the same chip. The sensitivity of the receiver with the present APD for NRZ signals is about -21.3 dBm, -17.8 dBm, and -12.6 dBm for KP4-FEC operation with different data rates of 50 Gbps, 80 Gbps, and 100 Gbps, while the sensitivity for four-level pulse amplitude modulation signals is about -13.2 dBm and -11.3 dBm for KP4-FEC operation with different data rates of 25 and 50 Gbaud. Such high-performance APDs pave the way to achieve high-speed and high-sensitivity data transmissions. (c) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
Monolithic Ge/Si avalanche photodiodes

yimin kang,michael t morse,mario j paniccia,moshe zadka,yuval saad,gadi sarid,alexandre pauchard,wissem sfar zaoui,huiwen chen,daoxin dai,john e bowers,handin liu,dion mcintosh,xiaoguang zheng,j c campbell

DOI: https://doi.org/10.1109/GROUP4.2009.5338300

2009-01-01

Abstract:We demonstrate mesa-type and waveguide-type Ge/Si avalanche photodiodes both with high performances. The gain-bandwidth product was measured as high as 340 GHz and the receiver sensitivity was -28 dBm and -30.4 dBm for mesa-and waveguide-type devices, respectively.
High-Performance Waveguide-Integrated Ge/Si Avalanche Photodetector with Lateral Multiplication Region

Daoqun Liu,Peng Zhang,Bo Tang,Wenwu Wang,Zhihua Li

DOI: https://doi.org/10.3390/mi13050649

IF: 3.4

2022-04-19

Micromachines

Abstract:High-performance waveguide-integrated Ge/Si APDs in separate absorption, charge, and multiplication (SACM) schemes have been exploited to facilitate energy-efficient optical communication and interconnects. However, the charge layer design is complex and time-consuming. A waveguide-integrated Ge/Si avalanche photodetector (APD) is proposed in a separate absorption and multiplication (SAM) configuration. The device can work at low voltage and high speed with a lateral multiplication region without complexity of the charge layer. The proposed device is implemented by the complementary metal-oxide-semiconductor (CMOS) process in the 8-inch Si photonics platform. The device has a low breakdown voltage of 12 V and shows high responsivity of 15.1 A/W at 1550 nm wavelength under optical power of −22.49 dBm, corresponding to a multiplication gain of 18.1. Moreover, an opto-electrical bandwidth of 20.7 GHz is measured at 10.6 V. The high-speed performance at low voltage shows a great potential to implement high-energy-efficient Si optical communications and interconnections.

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
Waveguide Ge/Si Avalanche Photodetector with Ultra-High Gain-Bandwidth Product of 1440Ghz

Hengzhen Cao,Yuluan Xiang,Weichao Sun,Jin Xie,Jingshu Guo,Daoxin Dai

DOI: https://doi.org/10.1109/acp/poem59049.2023.10368970

2023-01-01

Abstract:A lateral Reach-Through type waveguide Ge/Si avalanche photodetector is presented. The device shows a gain of 20.4 and a bandwidth of approximately 45GHz for −18dBm input optical power under −14V reverse bias voltage, with the corresponding gain-bandwidth product of 918GHz. Furthermore, the device has a gain of 32.1 for −21dBm input optical power, which indicating the proposed avalanche photodetector has a record ultra-high gain-bandwidth product of 1440GHz. The 50Gbps eye-diagrams under different optical power are also measured.
All-Silicon Waveguide Avalanche Photodetectors with Ultrahigh Gain-Bandwidth Product and Low Breakdown Voltage

Haike Zhu,Linjie Zhou,Yanyang Zhou,Qianqian Wu,Xinwan Li,Jianping Chen

DOI: https://doi.org/10.1109/jstqe.2014.2328233

IF: 4.9

2014-01-01

IEEE Journal of Selected Topics in Quantum Electronics

Abstract:We investigate the avalanche effect in 250 μm long silicon waveguides integrated with periodically interleaved p-n junctions. The surface state absorption is enhanced by reducing the waveguide width. Upon a bias voltage of -5.9 V, the measured responsivity is 2.33 A/W with a dark current of 0.78 μA. The avalanche gain is 284 and the 3-dB bandwidth is 3.6 GHz, leading to an ultrahigh gain-bandwidth product of 1.02 THz. The avalanche photocurrent is stable with time below -6 V when ~1 mW on-chip optical power is launched. The photodetector has a linear response to optical power and can be readily integrated with other silicon photonic devices.
10 Gbps silicon waveguide-integrated infrared avalanche photodiode

Jason J Ackert,Abdullah S Karar,Dixon J Paez,Paul E Jessop,John C Cartledge,Andrew P Knights

DOI: https://doi.org/10.1364/OE.21.019530

2013-08-26

Abstract:We have fabricated monolithic silicon avalanche photodiodes capable of 10 Gbps operation at a wavelength of 1550 nm. The photodiodes are entirely CMOS process compatible and comprise a p-i-n junction integrated with a silicon-on-insulator (SOI) rib waveguide. Photo-generation is initiated via the presence of deep levels in the silicon bandgap, introduced by ion implantation and modified by subsequent annealing. The devices show a small signal 3 dB bandwidth of 2.0 GHz as well as an open eye pattern at 10 Gbps. A responsivity of 4.7 ± 0.5 A/W is measured for a 600 µm device at a reverse bias of 40 V.
Broadband, Gate-Tunable, and Low-Energy-Consumption Avalanche Photodetector Based on WS2/Ge Heterostructure

Ningning Zhang,Yuekai Hao,Liang Gao,Xixi Yuan,Youyuan Yao,Jingnan Gao,Tian Miao,Liming Wang,Huiyong Hu

DOI: https://doi.org/10.1109/ted.2024.3419771

IF: 3.1

2024-07-26

IEEE Transactions on Electron Devices

Abstract:The novel broadband avalanche photodetectors based on 2-D/3-D van der Waals (vdWs) heterostructures provide a new approach for next-generation photoelectric devices. Herein, an avalanche photodetector based on WS2/Ge heterojunction with a top gate is readily realized. The ultralow dark current ( A) is obtained in the device under a gate voltage of -1 V. The photovoltaic effect allows the device to operate under zero bias with considerable responsivity (0.36/0.009 A/W) and detectivity ( / jones) at 532/1550 nm. The carrier multiplication caused by avalanche breakdown in the device is also observed, resulting in the high responsivity of 92 and 3.4 A/W and the maximum gain of 6 and 175 under 532 and 1550 nm illumination, respectively. Based on the ultralow dark current and the breakdown voltage (5.0 V), as well as the broad detection region covering the visible and near-infrared range, the WS2/Ge broadband avalanche photodetector is promising for the broadband and low-energy-consumption detector applied in optical communication and laser radar imaging.

engineering, electrical & electronic,physics, applied
High-Power Ge/Si Waveguide Photodetector

Hengzhen Cao,Yuluan Xiang,Weichao Sun,Jin Xie,Jingshu Guo,Zejie Yu,Liu,Yaocheng Shi,Daoxin Dai

DOI: https://doi.org/10.1021/acsphotonics.4c00173

IF: 7

2024-01-01

ACS Photonics

Abstract:A lateral germanium/silicon waveguide photodetector with a side-coupling structure is proposed and realized. For the present photodetector, the input light is split into four channels, which are gradually coupled into two parallel germanium waveguides by adiabatic side-coupling. In this way, uniform optical field distribution is achieved and the space-charge effect is eliminated greatly even with high optical power. The experimental results show that the responsivity is still as high as 0.68 A/W even for an input optical power of 28 mW and the saturation photocurrent is more than 19.5 mA. The present photodetector features a broad bandwidth of >40 GHz for detecting low optical power, while the bandwidth is still more than 20 GHz for the input optical power of 12.4 mW (the output current is 10.2 mA). The open eye-diagrams for receiving the 25 and 50 Gbps data are demonstrated with the photocurrents of 16 and 8.5 mA, respectively. The present side-coupling Ge/Si photodetector exhibits excellent performances for high-power detection compared with the conventional one.
High-Performance Waveguide-Integrated Bi2O2Se Photodetector for Si Photonic Integrated Circuits.

Jianghong Wu,Maoliang Wei,Jianglong Mu,Hui Ma,Chuyu Zhong,Yuting Ye,Chunlei Sun,Bo Tang,Lichun Wang,Junying Li,Xiaomin Xu,Bilu Liu,Lan Li,Hongtao Lin

DOI: https://doi.org/10.1021/acsnano.1c04359

IF: 17.1

2021-01-01

ACS Nano

Abstract:Due to the excellent electrical and optical properties and their integration capability without lattice matching requirements, low-dimensional materials have received increasing attention in silicon photonic circuits. Bi2O2Se with high carrier mobility, narrow bandgap, and good air stability is very promising for high-performance near-infrared photodetectors. Here, the chemical vapor deposition method is applied to grow Bi2O2Se onto mica, and our developed polycarbonate/polydimethylsiloxane-assisted transfer method enables the clean and intact transfer of Bi2O2Se on top of a silicon waveguide. We demonstrated the Bi2O2Se/Si waveguide integrated photodetector with a small dark current of 72.9 nA, high responsivity of 3.5 A·W-1, fast rise/decay times of 22/78 ns, and low noise-equivalent power of 15.1 pW·Hz-0.5 at an applied voltage of 2 V in the O-band for transverse electric modes. Additionally, a microring resonator is designed for enhancing light-matter interaction, resulting in a wavelength-sensitive photodetector with reduced dark current (15.3 nA at 2 V) and more than a 3-fold enhancement in responsivity at the resonance wavelength, which is suitable for spectrally resolved applications. These results promote the integration of Bi2O2Se with a silicon photonic platform and are expected to accelerate the future use of integrated photodetectors in spectroscopy, sensing, and communication applications.
High-Speed and High-Responsivity Silicon/Black-Phosphorus Hybrid Plasmonic Waveguide Avalanche Photodetector

Chaoyue Liu,Jingshu Guo,Laiwen Yu,Yuluan Xiang,Hengtai Xiang,Jiang Li,Daoxin Dai

DOI: https://doi.org/10.1021/acsphotonics.2c00244

IF: 7

2022-01-01

ACS Photonics

Abstract:Two-dimensional materials have attracted muchinterest for realizing novel optoelectronic devices, e.g., photo-detectors. In this work, we demonstrate a high-performance black-phosphorus avalanche photodetector based on a silicon hybridplasmonic waveguide with double nanoslots, in which way the lightabsorption by black phosphorus is enhanced and the carrier transittime is reduced simultaneously. Benefiting from the avalanchemultiplication process in black phosphorus, the present waveguideavalanche photodetector exhibits high responsivities of 66 A/W(@optical power of 2.9 mu W) and 125 A/W (@optical power of 1.4 mu W) for the wavelength bands of 1.55 and 1.95 mu m, respectively.The measured 3 dB-bandwidth is 1.05 GHz, which is at least three orders of magnitude higher than those reported high-gainphotodetectors based on two-dimensional materials. The present high-performance silicon/BP waveguide avalanche photodetectorprovides a promising option toward the applications of optical sensing, optical imaging, and optical communications in thewavelength band of 1.55/1.95 mu m and even beyond.
Design and Optimization of High-Responsivity High-Speed Ge/Si Avalanche Photodiode in the C+L Band

Chuan Li,Xinyu Li,Yan Cai,Wei Wang,Mingbin Yu

DOI: https://doi.org/10.3390/mi14010108

IF: 3.4

2022-01-01

Micromachines

Abstract:We present the design of Ge/Si avalanche photodetectors with SiN stressor-induced Ge strain for the C+L band light detection. By optimizing the placement position and thickness of the SiN layer with compressive stress, a uniform strain distribution with a maximum magnitude of 0.59% was achieved in Ge. The surface-illuminated APDs have been studied in respect of the photo-dark current, responsivity, gain, and 3-dB bandwidth. After introducing SiN stressor, the APD exhibits high primary responsivity of 0.80 A/W at 1.55 μm, 0.72 A/W at 1.625 μm, and 3-dB bandwidth of 17.5 GHz. The increased tensile strain in Ge can significantly improve the responsivity and broaden the response band of the device. This work provides a constructive approach to realizing high-responsivity high-speed Ge/Si APD working in the C+L band.
High Responsivity Evanescently Coupled Waveguide Photodiode Using Spot-Size Converter and Distributed Bragg Reflector at 1.55 Μm Wavelength

Yingjian Liu,Kai Jiang,Zhongjun Jiang,Bojian Zhang,Danyang Luo,Yun Liu,Lujie Qu,Wen Liu,Liang Wang

DOI: https://doi.org/10.1016/j.infrared.2023.104619

IF: 2.997

2023-01-01

Infrared Physics & Technology

Abstract:InGaAs/InP waveguide photodiode, one of the most crucial devices in optical modules, has proven to be beneficial for exponential data communication. However, improving responsivity with a high 3 dB bandwidth remains a challenge for various photodetector designs. In this letter, a multi-layers SiO2/SiNx distributed Bragg reflector and a spot-size converter are both employed and improve responsivity by 61%. An optimized optical matching layer and a spot-size converter combined with the reflector lead to a 0.66 A/W responsivity at 1550 nm wavelength. 3 dB bandwidth of the device can achieve 85 GHz with a 3 mu m x 10 mu m active area. The responsivity improvement indicates a higher quantum efficiency and signal-to-noise ratio. It could be beneficial for high speed optical communication and other applications.
Avalanche photodiodes on silicon photonics

Yuan Yuan,Bassem Tossoun,Zhihong Huang,Xiaoge Zeng,Geza Kurczveil,Marco Fiorentino,Di Liang,Raymond G. Beausoleil

DOI: https://doi.org/10.1088/1674-4926/43/2/021301

2022-02-01

Journal of Semiconductors

Abstract:Abstract Silicon photonics technology has drawn significant interest due to its potential for compact and high-performance photonic integrated circuits. The Ge- or III–V material-based avalanche photodiodes integrated on silicon photonics provide ideal high sensitivity optical receivers for telecommunication wavelengths. Herein, the last advances of monolithic and heterogeneous avalanche photodiodes on silicon are reviewed, including different device structures and semiconductor systems.

physics, condensed matter
Avalanche photodiode with ultrahigh gain–bandwidth product of 1,033 GHz

Yang Shi,Xiang Li,Guanyu Chen,Mingjie Zou,Hongjun Cai,Yu Yu,Xinliang Zhang

DOI: https://doi.org/10.1038/s41566-024-01421-2

IF: 35

2024-04-10

Nature Photonics

Abstract:Avalanche photodiodes (APDs) have enabled highly sensitive photodetection in optical communication, sensing and quantum applications. Great efforts have been focused on improving their gain–bandwidth product (GBP). However, further advance has encountered enormous barriers due to incomplete consideration of the avalanche process. Here we implement a germanium/silicon APD with the GBP breaking through 1 THz. The performance is achieved by introducing two cooperative strategies: precisely shaping the electric field distribution and elaborately engineering the resonant effect in the avalanche process. Experimentally, the presented APD has a primary responsivity of 0.87 A W −1 at unity gain, a large bandwidth of 53 GHz in the gain range of 9–19.5 and an ultrahigh GBP of 1,033 GHz under −8.6 V and at 1,550 nm. For demonstration, data reception of 112 Gb s −1 on–off keying and 200 Gb s −1 four-level pulse amplitude modulation signals per wavelength are achieved with clear eye diagrams and high sensitivity, as well as 800 G reception via four channels. This work provides a potential successor for high-speed optoelectronic devices in next-generation optical interconnects.

optics,physics, applied
Fabrication of A 10 Gb/S Ingaas/Inp Avalanche Photodiode with an Algainas/Inp Distributed Bragg Reflector

Yue Ai-Wen,Wang Ren-Fan,Xiong Bing,Shi Jing

DOI: https://doi.org/10.1088/0256-307x/30/3/038501

2013-01-01

Chinese Physics Letters

Abstract:A new planar InGaAs/InP avalanche photodiode (APD) is proposed and fabricated, which incorporates a high reflective AlGaInAs/InP distributed Bragg reflector (DBR) to improve its responsivity. The fabricated APD exhibits a low dark current of less than 3nA at M = 10 and high responsivity of 0.92 A/W at M = 1. The gain bandwidth product of the device is above 80 GHz. The APD receiver exhibits a sensitivity of over −26dBm at BER = 10−12, which is sufficient for 10Gb/s communication systems.
Hybrid Integrated Velocity Matched Travelling-Wave InP/InGaAs Photodetectors with Silicon Nitride Waveguides

Pengfei Xu,Yujie Chen,Zengkai Shao,Yanfeng Zhang,Tianyou Zhang,Zeru Wu,Chunchuan Yang,Lin Liu,Lidan Zhou,Hui Chen,Jie Liu,Siyuan Yu

DOI: https://doi.org/10.1364/acpc.2016.af3f.4

2016-01-01

Abstract:Broad-bandwidth high-responsivity waveguide integrated photodetectors are key optoelectronic devices for on-chip photoelectric conversion and radio frequency (RF) signal demodulations. Here, a hybrid integrated InP/InGaAs travelling-wave photodetector based on slotline transmission line with velocity-matched bent silicon nitride (SiN <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> ) optical waveguide is studied. Besides, the fabrication of the hybrid integrated TWPD device is demonstrated.
Resonant Si/Ge avalanche photodiode with an ultrahigh gain bandwidth product

john e bowers,daoxin dai,wissem sfar zaoui,yimin kang,michael t morse

DOI: https://doi.org/10.1109/PHOTWTM.2010.5421935

2010-01-01

Abstract:A resonant Ge/Si APD with the SACM (separate-absorption-charge-multiplication) structure is presented. Due to the resonance effect in the avalanche region, the Ge/Si APD shows an ultra-high gain-band products (GBP) (860 GHz). This may make it possible to generate electrical data directly without a TIA (trans-impedance-amplifier). Consequently, the receiver based on the resonant Ge/Si APD may be cheaper, smaller and lower power than existing approaches.

High-performance Waveguide Ge/Si Avalanche Photodiode with Simplified Fabrication Processes

Avalanche-Enhanced Photocurrents in Pin Silicon Waveguides at 1550 Nm Wavelength

High-performance waveguide Ge/Si avalanche photodiode with a lateral separate-absorption-charge-multiplication structure

Waveguide Si-Ge Avalanche Photodiode Based on Hole-Generated Impact Ionization.

High-speed waveguide Ge/Si avalanche photodiode with a gain-bandwidth product of 615 GHz

Monolithic Ge/Si avalanche photodiodes

High-Performance Waveguide-Integrated Ge/Si Avalanche Photodetector with Lateral Multiplication Region

Waveguide Ge/Si Avalanche Photodetector with Ultra-High Gain-Bandwidth Product of 1440Ghz

All-Silicon Waveguide Avalanche Photodetectors with Ultrahigh Gain-Bandwidth Product and Low Breakdown Voltage

10 Gbps silicon waveguide-integrated infrared avalanche photodiode

Broadband, Gate-Tunable, and Low-Energy-Consumption Avalanche Photodetector Based on WS2/Ge Heterostructure

High-Power Ge/Si Waveguide Photodetector

High-Performance Waveguide-Integrated Bi2O2Se Photodetector for Si Photonic Integrated Circuits.

High-Speed and High-Responsivity Silicon/Black-Phosphorus Hybrid Plasmonic Waveguide Avalanche Photodetector

Design and Optimization of High-Responsivity High-Speed Ge/Si Avalanche Photodiode in the C+L Band

High Responsivity Evanescently Coupled Waveguide Photodiode Using Spot-Size Converter and Distributed Bragg Reflector at 1.55 Μm Wavelength

Avalanche photodiodes on silicon photonics

Avalanche photodiode with ultrahigh gain–bandwidth product of 1,033 GHz

Fabrication of A 10 Gb/S Ingaas/Inp Avalanche Photodiode with an Algainas/Inp Distributed Bragg Reflector

Hybrid Integrated Velocity Matched Travelling-Wave InP/InGaAs Photodetectors with Silicon Nitride Waveguides

Resonant Si/Ge avalanche photodiode with an ultrahigh gain bandwidth product