Abstract:2D materials and their heterostructures exhibit considerable potential in the development of avalanche photodetectors (APDs) with high gain, response, and signal-to-noise ratio. These materials hold promise in addressing inherent technical challenges associated with APDs, such as low light absorption coefficient, elevated noise current, and substantial power consumption due to high bias resulting in only moderate current gain. In this work, a macro-assembled graphene nanofilm (nMAG)/epitaxial silicon (epi-Si) vertical heterostructure photodetector with a responsivity of 0.38 A W-1 and a response time of 1.4 mu s is reported. The photodetectors use high-quality nMAG as the absorption layer and a lightly-doped epi-Si layer as the multiplication region under the avalanche mode to provide a high responsivity (2.51 mA W-1) and detectivity (2.67 x 109 Jones) at 1550 nm, which can achieve high-resolution imaging. In addition, the APD displays a weak noise level and an avalanche gain of M = 1123. It can work with relatively low avalanche turn-on voltages and achieve self-quenching by switching from illumination to dark during avalanche multiplication, with a real-time data transfer rate of 38 Mbps in near-infrared light communication data links. The proposed structure enables the fabrication of high-performance APDs in the infrared range using complementary-metal-oxide-semiconductor (CMOS)-compatible processes. Silicon-based avalanche photodetectors (APDs) have emerged as crucial devices in imaging and optical communication systems. For challenges such as silicon bandgap, high operating voltage, and large noise, an innovative approach to fabricate highly sensitive multilayer graphene/epitaxial silicon near-infrared (NIR) APDs is introduced. This study also offers the opportunity to develop CMOS-compatible room temperature NIR image sensors and signal receivers. image

High-Performance Lateral Avalanche Photodiode Based on Silicon-on-Insulator Structure

Low-Energy Ion Implantation and Deep-Mesa Si-Avalanche Photodiodes with Improved Fabrication Process

High-Performance Waveguide-Integrated Ge/Si Avalanche Photodetector with Lateral Multiplication Region

Low breakdown voltage and CMOS compatible avalanche photodiode based on SOI substrate

A Near-Infrared CMOS Silicon Avalanche Photodetector with Ultra-Low Temperature Coefficient of Breakdown Voltage

High-performance waveguide Ge/Si avalanche photodiode with a lateral separate-absorption-charge-multiplication structure

Multilayer Graphene/Epitaxial Silicon Near-Infrared Self-Quenched Avalanche Photodetectors

A Pmt-Like High Gain Avalanche Photodiode Based on Gan/Aln Periodically Stacked Structure

4H-Sic SACM Avalanche Photodiode with Low Breakdown Voltage and High UV Detection Efficiency

Avalanche Photodiodes and Silicon Photomultipliers of Non-Planar Designs

Broadband and Ultra-High-Sensitivity Separate Absorption–Multiplication Avalanche Phototransistor Based on a Au–WSe2–Ge Heterostructure

Top-Illuminated Annular Ge-on-Si APD in 45-nm Lateral SOI Process With High Gain–Bandwidth Product at 4 V Reverse Bias

Design and Optimization of High-Responsivity High-Speed Ge/Si Avalanche Photodiode in the C+L Band

Vertical 4H-Sic N-I-p-n APDs with Partial Trench Isolation

Fabrication of A 10 Gb/S Ingaas/Inp Avalanche Photodiode with an Algainas/Inp Distributed Bragg Reflector

Direct observation of reach-through behavior in back-illuminated algan avalanche photodiode with separate absorption and multiplication structure

Geiger-Mode Operation 4H-SiC Recessed-Window Avalanche Photodiodes Fabricated by N Ion Implantation

Local Avalanche Photodetectors Driven by Lightning-rod Effect and Surface Plasmon Excitations

High-speed waveguide Ge/Si avalanche photodiode with a gain-bandwidth product of 615 GHz

Avalanche Mechanism Analysis of 4H-Sic N-I-p and P-I-n Avalanche Photodiodes Working in Geiger Mode

Avalanche photodiode with ultrahigh gain–bandwidth product of 1,033 GHz