Abstract:2D materials and their heterostructures exhibit considerable potential in the development of avalanche photodetectors (APDs) with high gain, response, and signal-to-noise ratio. These materials hold promise in addressing inherent technical challenges associated with APDs, such as low light absorption coefficient, elevated noise current, and substantial power consumption due to high bias resulting in only moderate current gain. In this work, a macro-assembled graphene nanofilm (nMAG)/epitaxial silicon (epi-Si) vertical heterostructure photodetector with a responsivity of 0.38 A W-1 and a response time of 1.4 mu s is reported. The photodetectors use high-quality nMAG as the absorption layer and a lightly-doped epi-Si layer as the multiplication region under the avalanche mode to provide a high responsivity (2.51 mA W-1) and detectivity (2.67 x 109 Jones) at 1550 nm, which can achieve high-resolution imaging. In addition, the APD displays a weak noise level and an avalanche gain of M = 1123. It can work with relatively low avalanche turn-on voltages and achieve self-quenching by switching from illumination to dark during avalanche multiplication, with a real-time data transfer rate of 38 Mbps in near-infrared light communication data links. The proposed structure enables the fabrication of high-performance APDs in the infrared range using complementary-metal-oxide-semiconductor (CMOS)-compatible processes. Silicon-based avalanche photodetectors (APDs) have emerged as crucial devices in imaging and optical communication systems. For challenges such as silicon bandgap, high operating voltage, and large noise, an innovative approach to fabricate highly sensitive multilayer graphene/epitaxial silicon near-infrared (NIR) APDs is introduced. This study also offers the opportunity to develop CMOS-compatible room temperature NIR image sensors and signal receivers. image

A Near-Infrared CMOS Silicon Avalanche Photodetector with Ultra-Low Temperature Coefficient of Breakdown Voltage

4H-Sic SACM Avalanche Photodiode with Low Breakdown Voltage and High UV Detection Efficiency

Low-Energy Ion Implantation and Deep-Mesa Si-Avalanche Photodiodes with Improved Fabrication Process

High-Performance Lateral Avalanche Photodiode Based on Silicon-on-Insulator Structure

Multilayer Graphene/Epitaxial Silicon Near-Infrared Self-Quenched Avalanche Photodetectors

Local Avalanche Photodetectors Driven by Lightning-rod Effect and Surface Plasmon Excitations

Low breakdown voltage and CMOS compatible avalanche photodiode based on SOI substrate

Designing a Sub-20V Breakdown Voltage SPAD With Standard CMOS Technology and n/p-well Structure

A Gan P-I-P-I-N Ultraviolet Avalanche Photodiode

A Pmt-Like High Gain Avalanche Photodiode Based on Gan/Aln Periodically Stacked Structure

Silicon single-photon avalanche diodes with nano-structured light trapping

Discrimination Voltage and Overdrive Bias Dependent Performance Evaluation of Passively Quenched Sic Single-Photon-Counting Avalanche Photodiodes

Recent progress of innovative infrared avalanche photodetectors

Ultraviolet Response in Coplanar Silicon Avalanche Photodiodes with CMOS Compatibility

Geiger-Mode Operation 4H-SiC Recessed-Window Avalanche Photodiodes Fabricated by N Ion Implantation

Broadband and Ultra-High-Sensitivity Separate Absorption–Multiplication Avalanche Phototransistor Based on a Au–WSe2–Ge Heterostructure

Characteristics of Thin InAlAs Digital Alloy Avalanche Photodiodes.

Al0.1Ga0.9N P-I-n Ultraviolet Avalanche Photodiodes with Suppressed Surface Leakage Current and Uniform Avalanche Breakdown.

Shallow-Mesa InP Avalanche Photodiode with Ultralow Dark Current

4H-Sic P-I-n Ultraviolet Avalanche Photodiodes Obtained by Al Implantation

High-Performance Al0.1Ga0.9N P-I-n Ultraviolet Avalanche Photodiodes with Ultra-Shallow Bevel Edge Terminations