Abstract:High-sensitivity and high-bandwidth receivers are always demanded for high-speed optical link systems. As a key element, an avalanche photodiode (APD) is often regarded as one of the most attractive options for achieving high sensitivity owing to the potential high internal gain. In this paper, a 48-GHz waveguide Ge/Si avalanche photodiode operating at the O-band (1310 nm) is designed with a lateral reach-through structure and fabricated with simplified processes. The fabricated APD shows a high primary responsivity of 0.93 A/W at the unit-gain voltage of -4.7 V. It has an avalanche gain of 12.8 and a record gain-bandwidth product of similar to 615 GHz with an input optical power of -15 dBm when operating at a bias voltage of -14 V. The present Ge/Si APD is used successfully for high-speed data receiving, showing a sensitivity improvement about 7.6 dB for KP4-FEC operation (i.e., BER = 2.4 x 10(-4)) with 50 Gbps non-return-to-zero (NRZ) data, compared with the case of using the reference PIN PD on the same chip. The sensitivity of the receiver with the present APD for NRZ signals is about -21.3 dBm, -17.8 dBm, and -12.6 dBm for KP4-FEC operation with different data rates of 50 Gbps, 80 Gbps, and 100 Gbps, while the sensitivity for four-level pulse amplitude modulation signals is about -13.2 dBm and -11.3 dBm for KP4-FEC operation with different data rates of 25 and 50 Gbaud. Such high-performance APDs pave the way to achieve high-speed and high-sensitivity data transmissions. (c) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement

Ultraviolet Response in Coplanar Silicon Avalanche Photodiodes with CMOS Compatibility

Research on Silicon Avalanche Photodetector with Wideband Response

4H-Sic SACM Avalanche Photodiode with Low Breakdown Voltage and High UV Detection Efficiency

Performance of Thin 4H-Sic UV Avalanche Photodiodes

4H-Sic P-I-n Ultraviolet Avalanche Photodiodes Obtained by Al Implantation

Design and Optimization of High-Responsivity High-Speed Ge/Si Avalanche Photodiode in the C+L Band

4H–sic Avalanche Photodiode Linear Array Operating in Geiger Mode

Noise Characterization of Geiger-Mode 4H-Sic Avalanche Photodiodes for Ultraviolet Single-Photon Detection

High-performance waveguide Ge/Si avalanche photodiode with a lateral separate-absorption-charge-multiplication structure

Ge-on-Si Avalanche Photodiodes with Photon Trapping Nanostructures for Sensing and Optical Quantum Applications

Development of Ultra High Sensitivity Uv Silicon Carbide Detectors

High-Responsivity ZnS Schottky Barrier Photodiode Array for Ultraviolet Imaging

High-speed waveguide Ge/Si avalanche photodiode with a gain-bandwidth product of 615 GHz

A Gan P-I-P-I-N Ultraviolet Avalanche Photodiode

Metal–Semiconductor–Metal Ultraviolet Avalanche Photodiodes Fabricated on Bulk GaN Substrate

A Near-Infrared CMOS Silicon Avalanche Photodetector with Ultra-Low Temperature Coefficient of Breakdown Voltage

128-pixel arrays of 4H-SiC UV APD with dual-frequency PECVD SiNx passivation

High-Performance Al0.1Ga0.9N P-I-n Ultraviolet Avalanche Photodiodes with Ultra-Shallow Bevel Edge Terminations

Broadband and Ultra-High-Sensitivity Separate Absorption–Multiplication Avalanche Phototransistor Based on a Au–WSe2–Ge Heterostructure

High-Temperature Single Photon Detection Performance of 4H-Sic Avalanche Photodiodes

Resonant Si/Ge avalanche photodiode with an ultrahigh gain bandwidth product