Abstract:Silicon carbide (SiC) detectors have excellent radiation detection capabilities for various radiation particles, including high energy resolution, fast response times, and good radiation resistance. A SiC radiation detection system was developed to measure the neutron fluence rate and the γ-ray dose rate in high intensity radiation fields. The system was composed of two SiC detectors, a temperature monitor, two preamplifiers for each SiC detector, a data acquisition unit with two signal channels, three pairs of communication devices, and an application software to analyze and visualize the measurement data. The two SiC detectors were fabricated based on two kinds of 4H-SiC diodes and used to respectively respond to neutrons and γ-rays. Repeated experiments showed that the two SiC detectors of the system can respond to α-particles, neutrons, and γ-rays. To verify the performance of the SiC detection system, including the response linearity of the neutron fluence rate, the measurement range of the γ-ray dose rate, and the radiation resistance of the SiC radiation detectors, the system was tested in multiple neutron and γ-ray fields. The tests results show the system can measure the neutron fluence rate from 5.64 × 10 2 cm-2 s-1 to 1.03 × 10 5 cm-2 s-1 with excellent linearity response, and the γ-ray dose rate from 0.005 Gy/h to 20 Gy/h. Furthermore, the SiC detectors demonstrated good radiation resistance. The neutron and γ-ray radiation field can still be measured stably by the system after exposure to neutron fluence of 1.07 × 10 14 cm-2 and γ-ray dose of 3.52 × 10 4 Gy. This work is the preliminary research to continue the exploration how to measure the n/γ hybrid fields accurately using SiC detectors considering the different energy of neutrons.

Development of Ultra High Sensitivity Uv Silicon Carbide Detectors

A Highly Sensitive Filterless Narrowband 4H-Sic Photodetector Employing a Charge Narrowing Strategy

High sensitivity wide-bandgap semiconductor ultraviolet photodetector

4H-Sic UV Photo Detectors with Large Area and Very High Specific Detectivity

Towards the Fabrication and Measurement of High Sensitivity Sic-Uv Detectors with Oxide Ramp Termination

Highly Sensitive Photoelectric Detection and Imaging Enhanced By Pyro‐phototronic Effect Based On A Photoinduced Dynamic Schottky Effect in 4H‐SiC

Ultraviolet Response in Coplanar Silicon Avalanche Photodiodes with CMOS Compatibility

Numerical and Analytical Study of 6H-Sic Detectors with High UV Performance

Study on SiC UV/EUV Coaxial Photodetector

Recent Progress of SiC UV Single Photon Counting Avalanche Photodiodes

Highly Sensitive Visible-Blind Extreme Ultraviolet Ni/4H-SiC Schottky Photodiodes with Large Detection Area.

4H-Sic SACM Avalanche Photodiode with Low Breakdown Voltage and High UV Detection Efficiency

Sensitive Silicon Nanowire Ultraviolet B Photodetector Induced by Leakage Mode Resonances

Peak Response Wavelength Tunable 4H-Sic UV Detector Covering Near-Ultraviolet Region with High-Temperature Stability and Radiation Hardness

Dual-Light Trapping From SiC Nano Dual-Structures Enables High-Responsivity van der Waals MSM Photodetector for UV Light Monitoring

High-temperature and reliability performance of 4H-SiC Schottky-barrier photodiodes for UV detection

Reach-Through-Collector Based 4H-Sic Phototransistor Enabling Nw/cm2 UV Detection

High Sensitivity X-Ray Detectors Based on 4H-Sic P-I-n Structure with 80μm Thick Intrinsic Layer

Discrimination Voltage and Overdrive Bias Dependent Performance Evaluation of Passively Quenched Sic Single-Photon-Counting Avalanche Photodiodes

Development of a silicon carbide radiation detection system and experimentation of the system performance

Performance of Thin 4H-Sic UV Avalanche Photodiodes