Dual-Light Trapping From SiC Nano Dual-Structures Enables High-Responsivity van der Waals MSM Photodetector for UV Light Monitoring

Yangyang Sun,Chen Wang,Siyi Xie,Yunbo Lu,Zhenmin Li,Shirong Chen,Gaobin Xu,Yongqiang Yu
DOI: https://doi.org/10.1109/led.2024.3424499
IF: 4.8157
2024-08-28
IEEE Electron Device Letters
Abstract:Herein, a SiC nanocone-nanohole dual-structured arrays (SiC NC-NHs) was proposed to improve ultraviolet (UV) photoresponse. Owing to the dual-light trapping effect, the novel as-fabricated Ti3C2Tx-SiC NC-NHs-Ti3C2Tx van der Waals (vdW) metal-semiconductor-metal (MSM) photodetector (PD) exhibits a responsivity up to 10.5 A/W @ 254 nm and an external quantum efficiency (EQE) of 5126% at bias voltage of -2 V, which are superior to most of previous UV PDs. Furthermore, a sensing system with functions of real-time and continuous UV radiation monitoring was successfully realized. The simple fabrication of the SiC-based vdW MSM PD can provide a pathway for integration of high-responsivity PDs for UV light monitoring.
engineering, electrical & electronic
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