A self-powered ultraviolet photodiode using an amorphous InGaZnO/p-silicon nanowire heterojunction

Chun-Ying Huang,Chien-Pei Huang,Hung Chen,Sheng-Wei Pai,Ping-Ju Wang,Xin-Rong He,Jin-Cheng Chen
DOI: https://doi.org/10.1016/j.vacuum.2020.109619
IF: 4
2020-10-01
Vacuum
Abstract:<p>This study proposes a novel photodetector (PD) that uses an amorphous InGaZnO (IGZO)/silicon nanowires (SiNWs) heterojunction, in which the IGZO functions as an ultraviolet (UV) light absorption layer and the nanowires provide carrier conduction paths and light trapping centers. The p-n heterojunction shows excellent rectification characteristics in the dark and distinctive photovoltaic behavior under UV illumination. A high responsivity of 0.53 A/W at 380 nm and a quick response time of less than 0.2 ms are achieved. The device exhibits self-powering characteristics under UV illumination due to the amorphous phase of IGZO. The architecture, which combines a wide-bandgap a-IGZO (∼3.5 eV) with a narrow-bandgap SiNWs, means that the photo-detection spectra extend from UV to near-infrared. This study demonstrates that the a-IGZO/SiNWs PD is suitable for applications that require high response speeds, broadband detection and self-sufficient functionality.</p>
materials science, multidisciplinary,physics, applied
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