Leaky Mode Resonance-Induced Sensitive Ultraviolet Photodetector Composed of Graphene/Small Diameter Silicon Nanowire Array Heterojunctions
Jun-Jie Wang,Can Fu,Hai-Yang Cheng,Xiao-Wei Tong,Zhi-Xiang Zhang,Di Wu,Li-Miao Chen,Feng-Xia Liang,Lin-Bao Luo
DOI: https://doi.org/10.1021/acsnano.1c06705
IF: 17.1
2021-10-04
ACS Nano
Abstract:Ultraviolet photodetectors (UVPDs) based on wide band gap semiconductors (WBSs) are important for various civil and military applications. However, the relatively harsh preparation conditions and the high cost are unfavorable for commercialization. In this work, we proposed a non-WBS UVPD by using a silicon nanowire (SiNW) array with a diameter of 45 nm as building blocks. Device analysis revealed that the small diameter SiNW array covered with monolayer graphene was sensitive to UV light but insensitive to both visible and infrared light illumination, with a typical rejection ratio of 25. Specifically, the responsivity, specific detectivity, and external quantum efficiency under 365 nm illumination were estimated to be 0.151 A/W, 1.37 × 1012 Jones, and 62%, respectively, which are comparable to or even better than other WBS UVPDs. Such an abnormal photoelectrical characteristic is related to the HE1m leaky mode resonance (LMR), which is able to shift the peak absorption spectrum from near-infrared to UV regions. It is also revealed that this LMR is highly dependent on the diameter and the period of the SiNW array. These results show narrow band gap semiconductor nanostructures as promising building blocks for the assembly of sensitive UV photodetectors, which are very important for various optoelectronic devices and systems.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsnano.1c06705.I–V curve of the Ag/Graphene/Ag and the In-Ga/n-Si/In-Ga contact (Figure S1), SEM image of scraped SiNWs (Figure S2), Raman spectrum of the graphene film (Figure S3), solution of leaky modes, absorption curve of SiNWs array with different diameters (Figure S4), contour plot of the absorption (Figure S5), photoresponse curves of the MLG/SiNWs array heterojunction UVPD (Figure S6), solution of key parameters of the photodetector, experimental absorption spectra (Figure S7), solution of the width of depletion region, I–V curves of 365 and 730 nm illumination (Figure S8) (PDF)This article has not yet been cited by other publications.
materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology