Abstract:A weak UV detection device is proposed in this work that utilizes a combination of the large specific surface area of micro-nanotextured black silicon and high negative charge density Al 2 O 3 . Black silicon is fabricated by two etching steps consist of Bosch etching and reactive ion etching. The absorption of black silicon increases up to 99.7%, which is reduced by 0.9% after Al 2 O 3 films are deposited. The 20 nm Al 2 O 3 film is deposited by atomic layer deposition(ALD) to ensure its quality and conformality. The external quantum efficiency (EQE) of the device is obtained to be greater than 80%, with the responsivity being higher than 170% at 200-255 nm. Notably, at 200 nm, the EQE reaches 162%, and the corresponding responsivity is found to be 262 mA/W. The photoelectric properties are characterized under intense and weak ultraviolet light, respectively. And the device demonstrates the good detection ability and fast response to weak UV light. Under illumination of weak light of different wavelengths at 220, 325, 405 nm under zero bias, the current of the device increases from 0.15 μA to 9.4 μA. The rise time(τ r ) and the decay time(τ d ) of device under weak UV light illumination(325nm) at the reverse voltage of 0V are estimated to be 0.3 s and 0.29 s. The power intensity(PI) of 325nm wavelength is 2.57 μW/cm 2 . Thus, the proposed detection strategy enables weak UV photodetection in missile warning and environmental monitoring.

Research on Silicon Shallow Junction UV Detectors

Wafer-scale Deep UV Si Photodiodes Based on Ultra-shallow Junction

Sensitive Silicon Nanowire Ultraviolet B Photodetector Induced by Leakage Mode Resonances

Deep and Weak Ultraviolet Photodetection on Micro-Nanotextured Black Silicon with Al2O3 Film

High-performance UV light detector using layered perovskites and textured silicon heterojunction

A self-powered high-performance graphene/silicon ultraviolet photodetector with ultra-shallow junction: breaking the limit of silicon?

Fabrication of Ultra-Shallow Junction by in Situ Doped Amorphous Silicon Films and Its Application in Silicon Drift Detectors

Self-powered ultraviolet photodetector with very short and balanced response/recovery time based on ZnO/Si heterojunction with complex interface structure

Development of Ultra High Sensitivity Uv Silicon Carbide Detectors

High sensitivity wide-bandgap semiconductor ultraviolet photodetector

Air-Stable Self-Driven UV Photodetectors on Controllable Lead-Free CsCu2I3 Microwire Arrays.

UV Photodetector Based on Vertical (al, Ga)N Nanowires with Graphene Electrode and Si Substrate

High-Performance Silicon-Compatible Large-Area UV-to-Visible Broadband Photodetector Based on Integrated Lattice-Matched Type II Se/n-Si Heterojunctions

Dual-Light Trapping From SiC Nano Dual-Structures Enables High-Responsivity van der Waals MSM Photodetector for UV Light Monitoring

Study on Silicon Carbide (sic) Schottky Ultraviolet Photodetectors

4H-SiC Ultraviolet Photodetector Array with Vertical MSM Configuration

Core-Shell Silicon Nanowire Array-Cu Nanofilm Schottky Junction For A Sensitive Self-Powered Near-Infrared Photodetector

Microstructured silicon photodetector

Gate-Controlled NiO/Graphene/4H-SiC Double Schottky Barrier Heterojunction Based on a Metal-Oxide-Semiconductor Structure for Dual-Mode and Wide Range Ultraviolet Detection

Ultraviolet Detectors Based on Wide Bandgap Semiconductor Nanowire: A Review

Advancements in Dual-Function UV-Visible Light Detection