High-performance UV light detector using layered perovskites and textured silicon heterojunction

Qiaohe Wang,Haiyan Wang,Renzhong Xue,Mengxin Ning,Sen Li,Peng Chen,Min Sun,Zijiong Li,Sen li
DOI: https://doi.org/10.1016/j.jallcom.2023.171399
IF: 6.2
2023-07-16
Journal of Alloys and Compounds
Abstract:UV photodetectors have gained popularity due to their high precision and capability to filter out interference from solar electromagnetic radiation. A UV detector of (BA) 2 PbCl 4 /textured silicon (BA = n-butylammonium) heterojunction was fabricated by depositing (BA) 2 PbCl 4 thin film on textured silicon. High performances of a rapid UV light response (t rise = t fall = 0.24 seconds), high responsivity (8.16 mA/W), and a low detection limit (7.5 μW/cm 2 ) were obtained from the designed detector, which were ascribed the unique morphology and structure of the detector. The rough surface morphology of textured silicon enlarges the light-absorbing area of (BA) 2 PbCl 4 by 20 times. Moreover, a p-n junction was constructed between (BA) 2 PbCl 4 and textured silicon. The electric field naturally present in the heterojunction facilitates the transport of carriers. Furthermore, the (BA) 2 PbCl 4 /textured silicon heterojunction exhibited significant selectivity towards UV light and demonstrated remarkable stability and repeatability in the air environment. This work offers a new strategy for developing inexpensive and high-performance UV photodetectors, which is significant for exploring the potential of layered perovskites in new photodetector device applications.
materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
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