Abstract:The as‐fabricated photodetector based on MoS2 QDs/3D‐graphene/Si Schottky coupled structures exhibits the ability to respond rapidly and with high sensitivity to light signals of different wavelengths. It accurately captures photon signals and converts them into electrical signals, allowing it to distinguish subtle differences within complex spectra, thereby enabling applications in high‐resolution visual imaging systems. To expand the detection capabilities of silicon (Si)‐based photodetector and address key scientific challenges such as low light absorption efficiency and short carrier lifetime in Si‐based graphene photodetector. This work introduces a novel Si‐based Schottky coupled structure by in situ growth of 3D‐graphene and molybdenum disulfide quantum dots (MoS2 QDs) on Si substrates using chemical vapor deposition (CVD) and plasma‐enhanced chemical vapor deposition (PECVD) techniques. The findings validate the "dual‐enhanced absorption" effect, enhancing the understanding of the mechanisms that improve optoelectronic performance. The synergistic effect of 3D‐graphene's natural nano‐resonant cavity and MoS2 QDs enhances light absorption efficiency and extends carrier lifetime. Introducing MoS2 QDs broadens and intensifies the built‐in electric field, promoting the separation of photogenerated electrons and holes. The photodetector exhibits a wideband light response in the wavelength range of 380–2200 nm. It stably outputs photocurrent under high‐frequency (1 kHz) modulated laser (2200 nm), with a responsivity (R) of 40 mA W−1 and detectivity (D*) of 1.15 × 109 Jones. Photodetectors show the ability to process and encrypt complex binary signals and achieve versatility in "AND" gate and "OR" gate logic operations, as well as image sensing (240 × 200 pixels).

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