Abstract:CMOS‐Compatible Te/Si photodetector is built by magnetron sputtering technology, in which the type II heterojunction constructed by Te and Si, the photogenerated carriers are effectively separated, which prolongs the carrier lifetime and improves the photoresponse by several orders of magnitude. The Te/Si heterojunction photodetector demonstrates excellent detectivity of 2.1 × 1013 Jones and fast turn‐on time of 920 ns. High‐quality photodetectors are always the main way to obtain external information, especially near‐infrared sensors play an important role in remote sensing communication. However, due to the limitation of Silicon (Si) wide bandgap and the incompatibility of most near infrared photoelectric materials with traditional integrated circuits, the development of high performance and wide detection spectrum near infrared detectors suitable for miniaturization and integration is still facing many obstacles. Herein, the monolithic integration of large area tellurium optoelectronic functional units is realized by magnetron sputtering technology. Taking advantage of the type II heterojunction constructed by tellurium (Te) and silicon (Si), the photogenerated carriers are effectively separated, which prolongs the carrier lifetime and improves the photoresponse by several orders of magnitude. The tellurium/silicon (Te/Si) heterojunction photodetector demonstrates excellent detectivity and ultra‐fast turn‐on time. Importantly, an imaging array (20 × 20 pixels) based on the Te/Si heterojunction is demonstrated and high‐contrast photoelectric imaging is realized. Because of the high contrast obtained by the Te/Si array, in comparison with the Si arrays, it significantly improve the efficiency and accuracy of the subsequent processing tasks when the electronic pictures are applied to artificial neural network (ANN) to simulate the artificial vision system.

Silicon-based Intermediate-band Infrared Photodetector realized by Te Hyperdoping

On-chip lateral Si:Te PIN photodiodes for room-temperature detection in the telecom optical wavelength bands

High-Performance Waveguide-Integrated Bi2O2Se Photodetector for Si Photonic Integrated Circuits.

Low-Noise Te/MoTe2 Heterojunction Waveguide-Integrated Photodetector

Extended infrared responses in Er/O-hyperdoped Si at room temperature

High infrared responsivity of silicon photodetector with titanium-hyperdoping

On‐Chip Room‐Temperature Operated Short‐Wavelength‐Infrared Si:S Photodetector with a Vertical Junction

Visible-blind Short-Wavelength Infrared Photodetector with High Responsivity Based on Hyperdoped Silicon

Waveguide-Integrated PdSe2 Photodetector over a Broad Infrared Wavelength Range

Graphene/silicon-quantum-dots/Si Schottky-PN cascade heterojunction for short-wavelength infrared photodetection

High Sensitivity of Room-Temperature Terahertz Photodetector Based on Silicon.

Highly Sensitive Narrowband Si Photodetector With Peak Response at Around 1060 nm

Self-assembled Te nanowire thin film/silicon heterostructure for cost-effective and fast photoresponse in near-infrared photodetector

Fully Depleted Self‐Aligned Heterosandwiched Van Der Waals Photodetectors

Room‐Temperature Blackbody‐Sensitive Photodetector with Visible‐To‐Long‐Wavelength‐Infrared Photoresponse and Ultrafast Speed Based on a Te/PtSe2 Heterostructure

Noise sources and improved performance of a mid-wave infrared uncooled silicon carbide optical photodetector

Ultra-broadband and High Response of the Bi2Te3-Si Heterojunction and Its Application As a Photodetector at Room Temperature in Harsh Working Environments.

CMOS‐Compatible Tellurium/Silicon Ultra‐Fast Near‐Infrared Photodetector

A Room-Temperature Near-Infrared Photodetector Based on a MoS2/CdTe P-N Heterojunction with a Broadband Response Up to 1700 Nm

Mid-infrared plasmonic silicon quantum dot/HgCdTe photodetector with ultrahigh specific detectivity

Room temperature Si:S barrier infrared detector with broadband response up to 4.4μm