Abstract:In this study, the doping of deep‐level element sulfur (S) is synergized with the device architecture incorporating a blocked impurity band (BIB) to fabricate an advanced infrared detector. The S‐doped Si (Si:S) BIB detector exhibited excellent short‐wave infrared detection performance. The multi‐scenario application demonstrations further confirmed its potential for practical use. Silicon (Si)‐based photodetectors are cost‐effective, eco‐friendly, and compatible with on‐chip complementary metal‐oxide‐semiconductor (CMOS) technology. However, expanding their photoresponse into the short‐wavelength‐infrared region beyond 1.1 μm remains challenging because of the intrinsic bandgap of Si. In this study, an ion implantation sulfur‐doped Si‐based infrared photodetector featuring a blocked impurity band (BIB) structure is investigated. The detector achieves an extended sub‐bandgap infrared response up to 2 μm through impurity band transitions, facilitated by the artificial creation of a deep‐level impurity band within the Si bandgap. The device exhibited a competitive photodetection effect with a high responsivity of 107.3 mA W−1 and an external quantum efficiency of 10.2%. Notably, the detector yielded an enhanced response speed with a raising time of 46 μs and a decay time of 135 μs at 1310 nm under room temperature. Finally, the versatile applications of this detector is presented in a multitude of scenarios encompassing material composition identification, multi‐band imaging, and optical communication. The proposed investigation not only proposed a method for Si‐based infrared detectors but also constituted a contribution to the advancement of silicon photonics.

High Sensitivity of Room-Temperature Terahertz Photodetector Based on Silicon.

High Performance of Room-Temperature NbSe2 Terahertz Photoelectric Detector.

On-chip lateral Si:Te PIN photodiodes for room-temperature detection in the telecom optical wavelength bands

High-Performance Waveguide-Integrated Bi2O2Se Photodetector for Si Photonic Integrated Circuits.

Ultrasensitive Room-Temperature Terahertz Direct Detection Based on a Bismuth Selenide Topological Insulator

Silicon-based Intermediate-band Infrared Photodetector realized by Te Hyperdoping

Ultra-broadband and High Response of the Bi2Te3-Si Heterojunction and Its Application As a Photodetector at Room Temperature in Harsh Working Environments.

Optical Temperature Sensor Based on Polysilicon Waveguides

Ultrabroadband and Multiband Infrared/terahertz Photodetectors with High Sensitivity

Hemispherical lens integrated room temperature ultra-broadband GaAs HEMT terahertz detector

Self-driven and Ultrasensitive Room-Temperature Terahertz Photodetector Based on Graphene-Ta2nise5 Van Der Waals Heterojunction

Uncooled Silicon-based Terahertz Metamaterial Photodetectors with Ultrafast Response

Room-temperature MoTe 2 /InSb heterostructure large-area terahertz detector

High sensitivity HgTe room temperature terahertz photodetector

A terahertz detector operating at room temperature

Sensing Infrared Photons at Room Temperature: from Bulk Materials to Atomic Layers

Uncooled EuSbTe 3 Photodetector Highly Sensitive from Ultraviolet to Terahertz Frequencies

Polysilicon Terahertz Thermal Detector Based on CMOS Technology

Enhancing Self‐Powered Terahertz Photodetection with VSe2 and Van Der Waals Heterostructure Integration Via Photothermoelectric Effect

On‐Chip Room‐Temperature Operated Short‐Wavelength‐Infrared Si:S Photodetector with a Vertical Junction

Achieving High-Responsivity Near-Infrared Detection at Room Temperature by Nano-Schottky Junction Arrays Via a Black Silicon/platinum Contact Approach