A terahertz detector operating at room temperature

Xin Lü,Lin Kang,Jian Chen,Yangyin Zhong,Nongyue He,Labao Zhang,Biaobing Jin,Weiwei Xu,Peiheng Wu,QiJun Yao,Shengcai Shi
DOI: https://doi.org/10.1117/12.821570
2009-01-01
Abstract:A detector for terahertz(THz) operating at room temperature for detecting the THz signals is fabricated by using radio frequency (RF) magnetron sputtering and electronic beam lithography. This detector is composed of a planar logarithm periodic antenna of Al film and a microbolometer of Nb 5N6 thin film, acting as both a radiation absorber and atemperature sensor, respectively, which is fabricated on a high resistivity Si substrate with 100nm thick SiO2 layer. The best attainable responsivity of this device is over 100 volts per watt at 300K at a bias current of 2 mA, and the electrical noise equivalent powers (NEP) is as low as 3.98×10-10W•Hz1/2.These are good enough for many detecting and imaging arrays in THz frequencies. © 2009 SPIE.
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