Room temperature Nb5N6 bolometer for THz detection

Kang, L.,Lu, X.H.,Chen, J.,Jin, B.B.
DOI: https://doi.org/10.1109/ICIMW.2009.5325668
2009-01-01
Abstract:Based on Nb5N6 thin film, whose temperature coefficient of resistance is as high as -0.7% /K at room temperature, bolometer integrated with a planar bow-tie antenna has been designed and fabricated for detecting THz signal without the need to cool the bolometer itself. The best attainable electrical responsivity of the bolometer is about -400 V/W at a current bias of 0.4 mA. The electrical NEP is 6.9times10-11 W/Hz1/2 for a modulation frequency at 300 Hz and 9.8times10-12 W/Hz1/2 for a modulation frequency above 10 kHz.
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