Abstract:Recently, the intrinsic magnetic topological insulator MnBi2Te4 has attracted enormous research interest due to the great success in realizing exotic topological quantum states, such as the quantum anomalous Hall effect, the axion insulator state, and high-Chern-number and high-temperature Chern insulator (CI) states. One key issue in this field is to effectively manipulate these states and control topological phase transitions. Here, by systematic angle-dependent transport measurements, we reveal a magnetization-tuned topological quantum phase transition from CI to magnetic insulator with gapped Dirac surface states in MnBi2Te4 devices. Specifically, as the magnetic field is tilted away from the out-of-plane direction by similar to 40-60 degrees, the Hall resistance deviates from the quantization value, and a colossal, anisotropic magnetoresistance is detected. Theoretical analyses based on modified Landauer-Buttiker formalism show that the field-tilt-driven switching from the ferromagnetic state to the canted antiferromagnetic state induces a topological quantum phase transition from CI to magnetic insulator with gapped Dirac surface states in MnBi2Te4 devices. These findings reveal a kind of topological phase transition associated with magnetism and spin-orbit coupling. In this letter, we suggest that MnBi2Te4 is an ideal platform for exploring topological quantum phase transitions, and it provides an efficient means for modulating topological quantum states and topological quantum phase transitions.

Ultrasensitive Anisotropic Room-Temperature Terahertz Photodetector Based on an Intrinsic Magnetic Topological Insulator MnBi2Te4.

Topological Insulator MnBi2Te4 and Its Van Der Waals Heterostructure for Sensitive Room-Temperature Terahertz Photodetection

MnBi2Te4 Thin-Film Photodetector with a Millisecond Response Speed and Long-Term Air Stability

Ultrasensitive Room-Temperature Terahertz Direct Detection Based on a Bismuth Selenide Topological Insulator

Universal gapless Dirac cone and tunable topological states in (MnBi$_2$Te$_4$)$_m$(Bi$_2$Te$_3$)$_n$ heterostructures

Room‐Temperature Self‐Powered Terahertz Photodetection in Ge‐Intercalated Topological Insulator GeBi4Te7

Magnetization-tuned topological quantum phase transition in MnBi<sub>2</sub>Te<sub>4</sub> devices

Broadband terahertz detector based on topological insulator heterojunction

Pursuing High-Temperature Quantum Anomalous Hall Effect in MnBi$_2$Te$_4$/Sb$_2$Te$_3$ Heterostructures

Magnetization-tuned topological quantum phase transition in MnBi2Te4 devices

PtTe2 -Based Type-II Dirac Semimetal and Its Van Der Waals Heterostructure for Sensitive Room Temperature Terahertz Photodetection.

Magnetic-field-induced Quantized Anomalous Hall Effect in Intrinsic Magnetic Topological Insulator MnBi_2Te_4

Magnetic-field-induced quantized anomalous Hall effect in intrinsic magnetic topological insulator MnBi$_2$Te$_4$

Helicity-dependent photocurrent of topological surface states in the intrinsic magnetic topological insulator MnBi2Te4

Intrinsic magnetic topological insulator phases in the Sb doped MnBi2Te4 bulks and thin flakes

Electronic States and Magnetic Response of MnBi2Te4 by Scanning Tunneling Microscopy and Spectroscopy

Anisotropic photocurrent response at MnBi2Te4-Metal interface

High sensitivity HgTe room temperature terahertz photodetector

From Negative to Positive Magnetoresistance in the Intrinsic Magnetic Topological Insulator MnBi2Te4

Photogalvanic spectroscopy on MnBi2Te4 topological insulator thin films

Unveiling the Anomalous Hall Response of the Magnetic Structure Changes in the Epitaxial MnBi2Te4 Films.