Anisotropic photocurrent response at MnBi2Te4-Metal interface

Xiaolan Zhang,Jingchuan Zheng,Junchao Ma,Yuxin Song,Xin Zhang,Qinghang Liu,Linghan Wang,Peiyao Xiao,Yongkai Li,Zhiwei Wang,Wende Xiao,Junxi Duan,Zhaolong Cao,Qinsheng Wang,Yong-Kai Li,Zhi-Wei Wang,Jun-Xi Duan
DOI: https://doi.org/10.1088/2053-1583/acef3a
IF: 6.861
2023-08-13
2D Materials
Abstract:The magnetic topological insulator MnBi2Te4 has attracted a lot of research interests for its exotic properties due to the interplay between nontrivial topology and magnetism. Here, we report the photocurrent response of MnBi2Te4 flakes under the excitation wavelengths between 633nm and 4000nm measured by scanning photocurrent microscopy. We observe a significant polarization dependent photocurrent response at the interface between metal electrode and MnBi2Te4, while the photocurrent response remains polarization-independent at MnBi2Te4 layer steps. The polarization dependent photocurrent at the MnBi2Te4-metal electrode interface, which is attributed to the polarization dependent light absorption at the interface, preserves in the whole tested wavelength range. The responsivity of the device is 80 μA•W-1. This responsivity as well as photocurrent polarity is consistent with the results calculated based on a photo-thermoelectric generation mechanism, thus we infer that photo-thermoelectric effect dominates in the photocurrent generation at MnBi2Te4-metal interface. Our results reveal the photoelectric response mechanism of the emerging material MnBi2Te4 for its potential optoelectronic applications.
materials science, multidisciplinary
What problem does this paper attempt to address?