Abstract:Novel topological semimetals, exemplified by NbIrTe4, have opened new avenues in terahertz technology, driven by their intriguing non‐equilibrium properties. This study highlights the selective growth of NbIrTe4 and vdW stacking to form heterostructures, enabling self‐powered terahertz photodetection at room temperature. The results reveal remarkable performance with high responsivity, low noise, and fast response, offering promising prospects in terahertz photon harvesting. The emergence of novel topological semimetal materials, accompanied by exotic non‐equilibrium properties, not only provides a fertile playground for a fundamental level of interest but also opens exciting opportunities for inventing new applications by making use of different light‐induced effects such as nonlinear optics, optoelectronics, especially for the highly pursued terahertz (THz) technology due to the gapless electronic structures. Exploring type‐II Weyl semimetal endowed with the richness of quantum wavefunction and peculiar band structure, underlie strong nonlinear coupling with THz waves. Here, the selective growth of type‐II Weyl semimetal NbIrTe4 by means of a self‐flux approach is reported, which hosts strongly tilted Weyl cones and exotic Fermi arcs. The oscillating THz field induced by the antenna is engineered in terms of planar metal‐topological semimetal‐metal structure, along with van der Waals stacking, which allows for self‐powered photodetection at room temperature. The results elucidate the superior performance of NbIrTe4‐graphene heterostructure‐based photodetectors with responsivity up to 264.6 V W−1 at 0.30 THz, fast response of 1 μs as well as low noise equivalent power ˂0.28 nW Hz−0.5 is achieved, already exhibiting high‐quality imaging at THz frequency. The results promise superb impacts in exploring topological Weyl semimetals for efficient low‐energy photon harvesting.

Topological Insulator MnBi2Te4 and Its Van Der Waals Heterostructure for Sensitive Room-Temperature Terahertz Photodetection

Ultrasensitive Anisotropic Room-Temperature Terahertz Photodetector Based on an Intrinsic Magnetic Topological Insulator MnBi2Te4.

Ultrasensitive Room-Temperature Terahertz Direct Detection Based on a Bismuth Selenide Topological Insulator

PtTe2 -Based Type-II Dirac Semimetal and Its Van Der Waals Heterostructure for Sensitive Room Temperature Terahertz Photodetection.

Broadband terahertz detector based on topological insulator heterojunction

Ultra-broadband and High Response of the Bi2Te3-Si Heterojunction and Its Application As a Photodetector at Room Temperature in Harsh Working Environments.

Room‐Temperature Self‐Powered Terahertz Photodetection in Ge‐Intercalated Topological Insulator GeBi4Te7

Low-Noise Te/MoTe2 Heterojunction Waveguide-Integrated Photodetector

High sensitivity HgTe room temperature terahertz photodetector

Ultrasensitive resistance switching and giant photoresponsivity from visible to mid-infrared of quasi one-dimensional Weyl semimetal (TaSe4)2I

MnBi2Te4 Thin-Film Photodetector with a Millisecond Response Speed and Long-Term Air Stability

A van der Waals heterostructure based on nickel telluride and graphene with spontaneous high-frequency photoresponse

High-Performance Broadband Image Sensing Photodetector Based on MnTe/WS2 van der Waals Epitaxial Heterostructures

Self-Powered Broadband Photodetector Based on MoS2/Sb2Te3 Heterojunctions: A promising approach for highly sensitive detection

Epitaxial Topological Insulator Bi2Te3 for Fast Visible to Mid-Infrared Heterojunction Photodetector by Graphene As Charge Collection Medium

Selective Growth of Type‐II Weyl‐Semimetal and Van der Waals Stacking for Sensitive Terahertz Photodetection

Terahertz Photodetection with Type‐II Dirac Fermions in Transition‐Metal Ditellurides and Their Heterostructures

Room-temperature MoTe 2 /InSb heterostructure large-area terahertz detector

Topological Dirac Semimetals for Ultra-Sensitive Terahertz Detection

High photodetection performance on vertically oriented topological insulator Sb2Te3/Silicon heterostructure

Topological Insulators Photodetectors: Preparation, Advances and Application Challenges