Nb5N6 bolometer operated at room temperature for detecting at 100 GHz

Lin Kang,Xin Lü,Jian Chen,Chunhai Cao,Weiwei Xu,Biaobing Jin,Peiheng Wu,QiJun Yao,Shengcai Shi
DOI: https://doi.org/10.1117/12.874578
2011-01-01
Abstract:Onto a double layer, which is made of a Si substrate (rho> 1000 Omega.cm) and a SiO2 layer 100 nm thick on top of it, a Nb5N6 thin film microbridge is deposited and integrated with an aluminum bow-tie planar antenna. With a SiO2 air-bridge further fabricated underneath the microbridge and operated at room temperature, such a combination behaves very well as a bolometer for detecting signals at 100 GHz, thanks to a temperature coefficient of resistance (TCR) as high as -0.7% K-1 of the Nb5N6 thin film. According to our estimations, the best attainable electrical responsivity of the bolometer is about -400 V/W at a current bias of 0.4 mA. The electrical noise equivalent power (NEP) is 6.9x10(-11) W/Hz(1/2) for a modulation frequency at 300 Hz and 9.8x10(-12) W/Hz(1/2) for a modulation frequency above 10 kHz respectively, which are better than those of commercial products (such as Golay cell and Schottky diode detectors). A quasi-optical receiver based on such a bolometer is constructed and measured.
What problem does this paper attempt to address?