Growth and Characterization of a Kind of Nitrogen-Rich Niobium Nitride for Bolometer Applications at Terahertz Frequencies

Lu Xue-Hui,Kang Lin,Zhou Lei,Chen Jian,Ji Zheng-Ming,Cao Chun-Hai,Jin Biao-Bing,Xu Wei-Wei,Wu Pei-Heng,Wang Xiao-Shu
DOI: https://doi.org/10.1088/0256-307x/25/11/065
2008-01-01
Abstract:Niobium is sputtered onto a single crystalline silicon substrate in N-2: Ar=4:1 gas mixture at the total pressure of 2Pa. The temperature coefficient of resistance of the sample is about 0.5% at 300 K, and up to 7% at 77 K, indicating the possibility of using it to make room-temperature bolometers with performances better than those based on Pt, Bi, or Nb. For a 60-nm-thick sample, the rms surface roughness is 0.45nm over an area of 2 mu m x 2 mu m. Analyses based on x-ray diffraction and x-ray photoelectronic spectroscopy indicate that the samples are Nb5N6 thin films in which there is a combination of Nb3+ and Nb5+, or Nb4+.
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