Abstract:We present a study on the superconducting properties of 300 nm thick NbTi thin films grown by co-sputtering on silicon substrates at room temperature. The samples exhibit a Nb (50 at.%) and Ti (50 at.%) chemical composition, revealing a polycrystalline structure textured along the (110) axis of the body-centered cubic structure. The measured superconducting critical temperature (T c ) was 9.65 K, and the upper critical field extrapolated to zero temperature reached approximately 15 T, resulting in a coherence length at zero temperature of approximately 4.7 nm. The penetration depth was determined through local magnetic force microscopy measurements conducted at temperatures from 4.25 to 7 K. The obtained values ranges from 250 (15) nm at 4.25 K to 370 (20) nm at 7 K. Extrapolating these measurements to zero temperature, we obtained an estimated value of 230 (20) nm. To extend the performance and potential applications of NbTi, we additionally grew a 150 nm thick sample on flexible polyimide. In this case, we observed that the films preserved their superconducting properties, displaying a decrease in Tc to 9.2 K and a similar upper critical field compared to samples grown on silicon. The feasibility of growing NbTi alloys at room temperature, with superconducting parameters comparable to or superior to metallic Nb for the upper critical field, renders this system promising for cryogenic applications, particularly in the development of high-performance electronic devices on both rigid and flexible substrates.

Ultrathin Nbtin Films with High Ti Composition for Superconducting Nanowire Single Photon Detectors

NbN Superconducting Nanowire Single-Photon Detector Fabricated on MgF2substrate

NbTiN thin films for superconducting photon detectors on photonic and two-dimensional materials

Single photon detection performance of highly disordered NbTiN thin films

Sputtered NbN Films for Ultrahigh Performance Superconducting Nanowire Single-Photon Detectors

Characterization of thin-film NbN superconductor for single-photon detection by transport measurements

Doped Niobium Superconducting Nanowire Single-Photon Detectors

Improvement of the Superconducting Properties of Nbn Thin Film on Single-Crystal Silicon Substrate by Using A Tin Buffer Layer

Niobium Nitride Preparation for Superconducting Single-Photon Detectors

Preparation and Characterization of Ultrathin WSi Films for Superconducting Nanowire Single-Photon Detectors

NbN thin films grown on silicon by molecular beam epitaxy for superconducting detectors

Mid-infrared characterization of NbTiN superconducting nanowire single-photon detectors on silicon-on-insulator

Nb5N6 Buffered Superconducting NbN Nanowire Single-Photon Detector on Si Substrate

High performance NbN nanowire superconducting single photon detectors fabricated on MgO substrates

Properties of Nb\_xTi\_{(1-x)}N thin films deposited on 300 mm silicon wafers for upscaling superconducting digital circuits

Nb$_x$Ti$_{1-x}$N low timing jitter single-photon detectors with unity internal efficiency at 1550 nm and 2.5 K

Characterization of Superconducting Nbn, WSi and MoSi Ultra-Thin Films in Magnetic Field

Properties of NbxTi(1-x)N thin films deposited on 300 mm silicon wafers for upscaling superconducting digital circuits.

Penetration depth and critical fields in superconducting NbTi thin films grown by co-sputtering at room temperature

Structural transitions in superconducting NbTiN thin films