Abstract:Superconducting nanowire single photon detectors (SNSPDs) promise to combine near-unity quantum efficiency with >100 megacounts per second rates, picosecond timing jitter, and sensitivity ranging from x-ray to mid-infrared wavelengths. However, this promise is not yet fulfilled, as superior performance in all metrics is yet to be combined into one device. The highest single-pixel detection efficiency and the widest bias windows for saturated quantum efficiency have been achieved in SNSPDs based on amorphous materials, while the lowest timing jitter and highest counting rates were demonstrated in devices made from polycrystalline materials. Broadly speaking, the amorphous superconductors that have been used to make SNSPDs have higher resistivities and lower critical temperature (Tc) values than typical polycrystalline materials. Here, we demonstrate a method of preparing niobium nitride (NbN) that has lower-than-typical superconducting transition temperature and higher-than-typical resistivity. As we will show, NbN deposited onto unheated SiO2 has a low Tc and high resistivity but is too rough for fabricating unconstricted nanowires, and Tc is too low to yield SNSPDs that can operate well at liquid helium temperatures. By adding a 50 W RF bias to the substrate holder during sputtering, the Tc of the unheated NbN films was increased by up to 73%, and the roughness was substantially reduced. After optimizing the deposition for nitrogen flow rates, we obtained 5 nm thick NbN films with a Tc of 7.8 K and a resistivity of 253 μΩ cm. We used this bias sputtered room temperature NbN to fabricate SNSPDs. Measurements were performed at 2.5 K using 1550 nm light. Photon count rates appeared to saturate at bias currents approaching the critical current, indicating that the device's quantum efficiency was approaching unity. We measured a single-ended timing jitter of 38 ps. The optical coupling to these devices was not optimized; however, integration with front-side optical structures to improve absorption should be straightforward. This material preparation was further used to fabricate nanocryotrons and a large-area imager device, reported elsewhere. The simplicity of the preparation and promising device performance should enable future high-performance devices.

Single photon detection performance of highly disordered NbTiN thin films

NbN Superconducting Nanowire Single-Photon Detector Fabricated on MgF2substrate

Microfiber-coupled superconducting nanowire single-photon detector for near-infrared wavelengths.

Ultrathin Nbtin Films with High Ti Composition for Superconducting Nanowire Single Photon Detectors

Saturating Quantum Efficiency of SNSPDs with Disorder Manipulation of NbN Films

Characterization of thin-film NbN superconductor for single-photon detection by transport measurements

NbN Superconducting Nanowire Single-Photon Detector With 90.5% Saturated System Detection Efficiency and 14.7 ps System Jitter at 1550 nm Wavelength

Nb$_x$Ti$_{1-x}$N low timing jitter single-photon detectors with unity internal efficiency at 1550 nm and 2.5 K

Mid-infrared characterization of NbTiN superconducting nanowire single-photon detectors on silicon-on-insulator

Doped Niobium Superconducting Nanowire Single-Photon Detectors

Wavelength Dependence of Intrinsic Detection Efficiency of NbN Superconducting Nanowire Single-Photon Detector*

64-pixel NbTiN superconducting nanowire single-photon detector array for spatially resolved photon detection

Hotspot Relaxation Time in Disordered Niobium Nitride Films

High Efficiency, Large-Active-area Superconducting Nanowire Single-Photon Detectors

Nb5N6 Buffered Superconducting NbN Nanowire Single-Photon Detector on Si Substrate

Sputtered NbN Films for Ultrahigh Performance Superconducting Nanowire Single-Photon Detectors

Saturation efficiency for detecting 1550 nm photons with a 2 × 2 array of Mo<sub>08</sub>Si<sub>02</sub> nanowires at 22 K

High Efficiency Superconducting Nanowire Single Photon Detector at Wavelength 940 Nm

Bias Sputtered Nbn and Superconducting Nanowire Devices

Ultra-low Dark Count Rate and High System Efficiency Single-Photon Detectors with 50 Nm-Wide Superconducting Wires