Abstract:Collective vibrations of proteins, rotations of small molecules, excitations of high-temperature superconductors, and electronic transitions in semiconductor nanostructures occur with characteristic frequencies between 1 and 10 THz. Applications to medicine, communications, security and other fields are emerging. However, mapping the coldest parts of the universe has been the largest driver for developing THz detectors. The result is a family of exquisitely-sensitive detectors requiring sub-4K temperatures. For earthbound THz science and technology, sensitivity remains important but many applications require high speed and operating temperatures. Room-temperature Schottky diodes enable some of these applications. Here we demonstrate a new type of detector in which THz radiation excites a collective oscillation of ~25,000 electrons between two gates in a microscopic four terminal transistor. The energy dissipates into other modes of the electron gas, warming it and changing the source-drain resistance. The detector shows amplifier-limited rise times near 1 ns and has detected THz laser radiation at temperatures up to 120K. The frequency of the collective oscillation tunes with small gate voltages. The first-generation tunable antenna-coupled intersubband Terahertz (TACIT) detectors tune between 1.5 and 2 THz with voltages <2V.

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to develop an ultrafast voltage - tunable terahertz (THz) detector that can operate at temperatures above 100K. Specifically, the researchers aim to overcome the limitation that existing terahertz detectors require extremely low temperatures (usually below 4K) to achieve high sensitivity, thereby providing more practical and efficient solutions for terahertz science and technology applications on Earth. ### Key Problems and Background 1. **Low - Temperature Requirement**: - Currently, the most sensitive terahertz detectors need to operate at extremely low temperatures (such as below 4K), which limits their application range. - For many application scenarios on Earth (such as medicine, communication, security, etc.), not only high sensitivity is required, but also high - speed response and relatively high operating temperatures. 2. **Limitations of Existing Technologies**: - Although room - temperature Schottky diodes can be used in some applications, their performance is limited. - Quantum well infrared photoconductors (QWIPs) perform well in the 25 - 38 THz frequency range, but perform poorly in the terahertz frequency band (1 - 10 THz) and usually require a low - temperature environment. - Other field - effect transistors based on two - dimensional electron gas (2DEG) can be voltage - tuned, but their coupling efficiency is low, which affects their competitiveness. ### Solution To overcome the above problems, the researchers proposed a new type of terahertz detector - TACIT (Tunable Antenna - Coupled Intersubband Terahertz Detector). This detector achieves improvement in the following aspects: 1. **Structural Design**: - The TACIT detector monolithically integrates the receiving antenna with a tiny electron absorber (consisting of 2DEG in GaAs/AlGaAs quantum wells), enhancing the coupling efficiency. - The antenna is capacitively coupled to the 2DEG, avoiding the series resistance loss caused by ohmic contact. 2. **Voltage Tuning**: - The resonant frequency of the detector can be tuned by applying a small gate voltage, enabling it to operate between 1.5 and 2 THz. - This tuning mechanism allows the detector to work in a wide frequency band and maintains independent control of the carrier density in the 2DEG. 3. **Performance Improvement**: - The TACIT detector shows an amplifier - limited rise time close to 1 nanosecond and has successfully detected terahertz laser radiation at temperatures up to 120K. - Theoretical calculations and experimental results indicate that through further optimization of the coupling and the design of the active area, future TACIT detectors can achieve a noise - equivalent power (NEP) of <1 pW/Hz^1/2 and have a rise time of <10 ps. ### Potential Applications This new type of detector is expected to be applied in various fields, including but not limited to: - **Time - Resolved Experiments**: Due to its fast response characteristics, it can be used for precise time - resolved measurements. - **Lightweight and Compact Asynchronous Receivers**: It can be used for THz communication and radar systems with ultra - high - frequency bandwidth. - **Imaging and Spectrometers**: It can be used for passive and active imaging and chip - level spectrometers. In conclusion, this paper solves the problem of the performance limitation of existing terahertz detectors in high - temperature environments by proposing the TACIT detector, providing new possibilities for future terahertz technology and applications.

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