Abstract:Terahertz (THz) and sub-THz frequency emitter and detector technologies are receiving increasing attention, underpinned by emerging applications in ultra-fast THz physics, frequency-combs technology and pulsed laser development in this relatively unexplored region of the electromagnetic spectrum. In particular, semiconductor-based ultrafast THz receivers are required for compact, ultrafast spectroscopy and communication systems, and to date, quantum well infrared photodetectors (QWIPs) have proved to be an excellent technology to address this given their intrinsic ps-range response However, with research focused on diffraction-limited QWIP structures (lambda/2), RC constants cannot be reduced indefinitely, and detection speeds are bound to eventually meet un upper limit. The key to an ultra-fast response with no intrinsic upper limit even at tens of GHz is an aggressive reduction in device size, below the diffraction limit. Here we demonstrate sub-wavelength (lambda/10) THz QWIP detectors based on a 3D split-ring geometry, yielding ultra-fast operation at a wavelength of around 100 {\mu}m. Each sensing meta-atom pixel features a suspended loop antenna that feeds THz radiation in the ~20 m3 active volume. Arrays of detectors as well as single-pixel detectors have been implemented with this new architecture, with the latter exhibiting ultra-low dark currents below the nA level. This extremely small resonator architecture leads to measured optical response speeds - on arrays of 300 devices - of up to ~3 GHz and an expected device operation of up to tens of GHz, based on the measured S-parameters on single devices and arrays.

Broadband THz Detection from 01 to 22 THz with Large Area Field-Effect Transistors

Broadband THz detection from 0.1 to 22 THz with large area field-effect transistors

Broadband Terahertz Detection With Zero-Bias Field-Effect Transistors Between 100 GHz and 11.8 THz With a Noise Equivalent Power of 250 pW/ $\sqrt{\text{Hz}}$ at 0.6 THz

Ultra-fast Transistor-Based Detectors for Precise Timing of Near Infrared and THz Signals.

Helmholtz-Zentrum Dresden-Rossendorf (HZDR) Broadband Terahertz Detection With Zero-Bias Field-Effect Transistors Between 100 GHz and 11.8 THz With a Noise Equivalent Power of 250 pW/√Hz at 0.6 THz

Broadband Thz Detection and Homodyne Mixing Using Gaas High-Electron-Mobility Transistor Rectifiers

Ultrabroadband and Multiband Infrared/terahertz Photodetectors with High Sensitivity

Detection of nanosecond-scale, high power THz pulses with a field effect transistor.

Symmetry Effects in Broadband, Room-Temperature Field Effect Transistor THz Detectors

Comparison of Large Area and Lumped Element Field-Effect Transistors for Broadband Detection of Terahertz

Ultrafast voltage-tunable detectors for Terahertz radiation operating above 100K

Broadband Terahertz Detection with an Antenna Coupled Zero-Bias Field-Effect Transistor

Detection of incoherent broadband terahertz light using antenna-coupled high-electron-mobility field-effect transistors

Picosecond-Scale Terahertz Pulse Characterization with Field-Effect Transistors

Room Temperature Terahertz Detection by Rectifying Field Effect Transistors

Tunnel field-effect transistors for sensitive terahertz detection

A Sub-Terahertz Broadband Detector Based on a GaN High-Electron-mobility Transistor with Nanoantennas

Broadband and Photovoltaic THz/IR Response in the GaAs-based Ratchet Photodetector

High intensity study of THz detectors based on field effect transistors

Detection of Incoherent Terahertz Light Using Antenna-Coupled High-Electron-Mobility Field-Effect Transistors

Ultrafast terahertz detectors based on three-dimensional meta-atoms