Abstract:Coupling phase-stable single-cycle terahertz (THz) pulses to scanning tunneling microscope (STM) junctions enables spatiotemporal imaging with femtosecond temporal and Ångstrom spatial resolution. The time resolution achieved in such THz-gated STM is ultimately limited by the subcycle temporal variation of the tip-enhanced THz field acting as an ultrafast voltage pulse, and hence by the ability to feed high-frequency, broadband THz pulses into the junction. Here, we report on the coupling of ultrabroadband (1-30 THz) single-cycle THz pulses from a spintronic THz emitter (STE) into a metallic STM junction. We demonstrate broadband phase-resolved detection of the THz voltage transient directly in the STM junction via THz-field-induced modulation of ultrafast photocurrents. Comparison to the unperturbed far-field THz waveform reveals the antenna response of the STM tip. Despite tip-induced low-pass filtering, frequencies up to 15 THz can be detected in the tip-enhanced near-field, resulting in THz transients with a half-cycle period of 115 fs. We further demonstrate simple polarity control of the THz bias via the STE magnetization and show that up to 2 V THz bias at 1 MHz repetition rate can be achieved in the current setup. Finally, we find a nearly constant THz voltage and waveform over a wide range of tip-sample distances, which by comparison to numerical simulations confirms the quasi-static nature of the THz pulses. Our results demonstrate the suitability of spintronic THz emitters for ultrafast THz-STM with unprecedented bandwidth of the THz bias and provide insight into the femtosecond response of defined nanoscale junctions.

Symmetry Effects in Broadband, Room-Temperature Field Effect Transistor THz Detectors

Broadband THz Detection from 01 to 22 THz with Large Area Field-Effect Transistors

Broadband Thz Detection and Homodyne Mixing Using Gaas High-Electron-Mobility Transistor Rectifiers

Broadband THz detection from 0.1 to 22 THz with large area field-effect transistors

Picosecond-Scale Terahertz Pulse Characterization with Field-Effect Transistors

Room Temperature Terahertz Detection by Rectifying Field Effect Transistors

Detection of nanosecond-scale, high power THz pulses with a field effect transistor.

Broadband Terahertz Detection With Zero-Bias Field-Effect Transistors Between 100 GHz and 11.8 THz With a Noise Equivalent Power of 250 pW/ $\sqrt{\text{Hz}}$ at 0.6 THz

Comparison of Large Area and Lumped Element Field-Effect Transistors for Broadband Detection of Terahertz

Ultra-fast Transistor-Based Detectors for Precise Timing of Near Infrared and THz Signals.

Helmholtz-Zentrum Dresden-Rossendorf (HZDR) Broadband Terahertz Detection With Zero-Bias Field-Effect Transistors Between 100 GHz and 11.8 THz With a Noise Equivalent Power of 250 pW/√Hz at 0.6 THz

Investigation of Parasitic Coupling of THz Radiation to a Large Area Field-Effect Transistor

Ultrafast voltage-tunable detectors for Terahertz radiation operating above 100K

The Microscopic Mechanisms of Nonlinear Rectification on Si-MOSFETs Terahertz Detector

Broadband Terahertz Detection with an Antenna Coupled Zero-Bias Field-Effect Transistor

Hot-electron resonant terahertz bolometric detection in the graphene/black-AsP field-effect transistors with a floating gate

Phase-Resolved Detection of Ultrabroadband THz Pulses inside a Scanning Tunneling Microscope Junction

Detection of incoherent broadband terahertz light using antenna-coupled high-electron-mobility field-effect transistors

Resonant plasmonic detection of terahertz radiation in field-effect transistors with the graphene channel and the black-As$_x$P$_{1-x}$ gate layer

Ultrabroadband and Multiband Infrared/terahertz Photodetectors with High Sensitivity

Tunnel field-effect transistors for sensitive terahertz detection