Abstract:The sensitivity of direct terahertz detectors based on self-mixing of terahertz electromagnetic wave in field-effect transistors is being improved with noise-equivalent power close to that of Schottky-barrier-diode detectors. Here we report such detectors based on AlGaN/GaN two-dimensional electron gas at 77~K are able to sense broadband and incoherent terahertz radiation. The measured photocurrent as a function of the gate voltage agrees well with the self-mixing model and the spectral response is mainly determined by the antenna. A Fourier-transform spectrometer equipped with detectors designed for 340, 650 and 900~GHz bands allows for terahertz spectroscopy in a frequency range from 0.1 to 2.0~THz. The 900~GHz detector at 77~K offers an optical sensitivity about $1~\mathrm{pW/\sqrt{Hz}}$ being comparable to a commercial silicon bolometer at 4.2~K. By further improving the sensitivity, room-temperature detectors would find applications in active/passive terahertz imaging and terahertz spectroscopy.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to improve the sensitivity of terahertz (THz) detectors, especially for the direct detection of broadband and incoherent terahertz radiation. The performance of current terahertz imaging systems is limited by the sensitivity of available terahertz detectors. Therefore, the development of a compact, ultrasensitive and broadband terahertz detector is crucial for passive terahertz imaging and spectroscopy applications. Specifically, the authors studied the performance of antenna - coupled detectors based on AlGaN/GaN high - electron - mobility field - effect transistors (HEMTs) at a low temperature of 77 K to achieve effective detection of broadband and incoherent terahertz radiation. By improving the sensitivity of these detectors, it is expected that they can be applied to active/passive terahertz imaging and terahertz spectroscopy at room temperature. ### Main problem summary: 1. **Improve the sensitivity of terahertz detectors**: The current terahertz detectors have insufficient sensitivity, which limits their application in imaging systems. 2. **Direct detection of broadband and incoherent terahertz radiation**: Existing detectors mainly rely on single - frequency or coherent terahertz sources, and the direct detection of broadband and incoherent terahertz radiation has not been fully verified. 3. **Develop high - performance detectors suitable for room - temperature applications**: In order to achieve practical applications, it is necessary to develop high - performance terahertz detectors that can work at room temperature. ### Solutions: - Use AlGaN/GaN HEMT detectors and cool them to 77 K to enhance electron mobility, thereby significantly reducing the noise - equivalent power (NEP). - Explain the response characteristics of the detectors through the self - mixing mechanism and verify this model through experiments. - Demonstrate the ability to use these detectors for terahertz Fourier - transform spectrometers (FTS), covering the frequency range from 0.1 to 2.0 THz. - Provide preliminary imaging experiment results, showing the potential of these detectors in practical applications. ### Key formulas: - Expression of internal photocurrent: \[ i_0=\frac{Z_V\Xi(V_G)M(\omega)}{r_0} \] where: - $Z_V = 377\,\Omega$ is the characteristic impedance of electromagnetic waves in vacuum. - $\Xi(V_G)=\frac{dG_0}{dV_G}$ is the field - effect factor. - $M(\omega)$ is the self - mixing term. - $r_0=\frac{1}{G_0}$ is the channel resistance. - Time - averaged expression of the self - mixing term: \[ M(\omega)=\left\langle\int_0^L E_x(x,t)E_z(x,t)\,dx\right\rangle_t \] - Time - averaged self - mixing factor under incoherent broadband terahertz radiation: \[ M=\int_0^{+\infty}I(\omega)\Lambda(\omega)\,d\omega \] Through these methods and techniques, the authors demonstrated the efficient detection ability of AlGaN/GaN HEMT detectors for broadband and incoherent terahertz radiation at low temperatures and provided directions for future room - temperature applications.

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