Abstract:In this study, we designed a terahertz (THz) detector chip based on field-effect transistors (FET) utilizing a standard 55-nm CMOS process. The chip includes eight different detector structures to explore the impact of various factors on detector performance. Each detector, characterized by its unique structural design, exhibited varying levels of parasitic capacitance, port impedance matching, and asymmetry, all impacting the detector's responsivity (Rv). Building on the previous non-quasi-static (NQS) model, this research introduced a comprehensive THz detector model by incorporating plasma wave detection theory, antenna impedance, parasitic effects of the detector, port impedance, and load effects. We also derived the mathematical expression for Rv in the non-resonant mode. The multiple different structures detectors integrated with antenna-on-chip (AoC) achieved the maximum Rv of 437.6V/W and the minimum noise-equivalent power (NEP) of 119 pW/Hz1/2 at 2.58 THz. We then conducted scanning imaging on a paper envelope containing a screw. The appearance of the screw and the details of creases at various thicknesses on the envelope were clearly visible. Analysis indicated that the detector's Rv and NEP are closely linked to several factors, including the match between the antenna and the detector, the parasitic capacitance at the THz wave coupling site, the maximization of THz wave energy coupled to the detector, the appropriate size of the detector, and the asymmetry between the source and drain.

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Modeling of an uncooled CMOS THz thermal detector with frequency‐selective cross‐dipole antenna and NMOS temperature sensor

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Design Of Planar Antennas For The Superconducting Terahertz Detector

Design Of 1-Thz Field Effect Transistor Detectors In 180-Nm Standard Cmos Process

Design of CMOS Terahertz Detector Array Based on Surface Plasmon Resonance Antenna

A Fully-Integrated 860-Ghz CMOS Terahertz Sensor

A terahertz detector operating at room temperature

A Terahertz Optomechanical Detector Based on Metasurface and Bi-Material Micro-Cantilevers

A Novel Terahertz Detector Based on Asymmetrical FET Array in 55-nm Standard CMOS Process

Modeling of antenna-coupled Si MOSFETs in the Terahertz Frequency Range

Enhancement of Terahertz Coupling Efficiency by Improved Antenna Design in GaN/AlGaN High Electron Mobility Transistor Detectors

Hemispherical lens integrated room temperature ultra-broadband GaAs HEMT terahertz detector

Fabrication and Parameters Calculation of Terahertz Detector with Resonance Cavity Structure