Abstract:We report on the modeling and experimental characterization of Si CMOS detectors of terahertz radiation based on antenna-coupled field-effect transistors (TeraFETs). The detectors are manufactured using TSMC's 65-nm technology. We apply two models -- the TSMC RF foundry model and our own ADS-HDM -- to simulate the Si CMOS TeraFET performance and compare their predictions with respective experimental data. Both models are implemented in the commercial circuit simulation software Keysight Advanced Design System (ADS). We find that the compact model TSMC RF is capable to predict the detector responsivity and its dependence on frequency and gate voltage with good accuracy up to the highest frequency of 1.2 THz covered in this study. This frequency is well beyond the tool's intended operation range for 5G communications and 110-GHz millimeter wave applications. We demonstrate that our self-developed physics-based ADS-HDM tool, which relies on an extended one-dimensional hydrodynamic transport model and can be adapted readily to other material technologies, has high predictive qualities comparable to those of the foundry model. We use the ADS-HDM to discuss the contribution of diffusive and plasmonic effects to the THz response of Si CMOS TeraFETs, finding that these effects, while becoming more significant with rising frequency, are never dominant. Finally, we estimate that the electrical NEP (perfect power coupling conditions) is on the order of 5 pW/$\sqrt{\rm{Hz}}$ at room-temperature.

Modeling of an uncooled CMOS THz thermal detector with frequency‐selective cross‐dipole antenna and NMOS temperature sensor

Modeling of an Uncooled CMOS THz Thermal Detector With Frequency-Selective Dipole Antenna and PTAT Temperature Sensor

Modeling of an uncooled CMOS THz thermal detector with frequency-selective loop antenna and NMOS temperature sensor

Design and Measurement of CMOS Terahertz Thermal Detector with Gate-antenna and NMOS Transistors

Monolithic resonant CMOS fully integrated triple-band THz thermal detector

Polysilicon Terahertz Thermal Detector Based on CMOS Technology

Equivalent method of GaAs PHEMT MMIC for thermal simulation

Electrothermal modeling of coaxial through silicon via (TSV) for three-dimensional ICs

Modeling of antenna-coupled Si MOSFETs in the Terahertz Frequency Range

Dual-frequency CMOS Terahertz Detector with Silicon-Based Plasmonic Antenna

A Novel Terahertz Detector Based on Asymmetrical FET Array in 55-nm Standard CMOS Process

Hemispherical lens integrated room temperature ultra-broadband GaAs HEMT terahertz detector

Optical Temperature Sensor Based on Polysilicon Waveguides

Modeling of the substrate influence on multielement THz detector operation

Design of Arbitrarily Polarized CMOS Terahertz Detector Based on Plasmonic Antenna

Arbitrarily Polarized CMOS Terahertz Detector with Silicon-Based Plasmonic Antenna

Integration of semiconductor readout circuits and superconductor THz detectors

Crosstalk Suppression in CMOS Terahertz Detectors by Using a Mushroom-Like AMC Structure.

Concurrent-Mode CMOS Detector IC for Sub-Terahertz Imaging System

Crosstalk suppression in CMOS terahertz detectors by using mushroom-like AMC structure

Design of CMOS Terahertz Detector Array Based on Surface Plasmon Resonance Antenna