Arbitrarily Polarized CMOS Terahertz Detector with Silicon-Based Plasmonic Antenna

Yiming Liao,Ke Wang,Jingyu Peng,Yaozu Guo,Feng Yan,Xiaoli Ji
DOI: https://doi.org/10.1109/cstic49141.2020.9282395
2020-01-01
Abstract:In this paper, we demonstrate the idea to combine silicon-based plasmonic antennas with MOSFETs to form an arbitrarily polarized terahertz (THz) detector based on standard CMOS technology. For an optimized detector with a size of 162 μm × 161 μm, the simulation results show that the field response to the vertical polarized wave has a radio of 0.91 with 90 degree delay compared to the response to the horizontal polarized wave at 0.25 THz. The proposed arbitrarily polarized on chip detector occupies a small area size, which offers a novel approach to THz array imaging and sensing.
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