Abstract:In order to effectively improve the coupling efficiency of terahertz (THz) detectors, we design a grating-coupled structure on the high-resistivity silicon substrate for 0.2 THz to 0.35 THz band to enhance the ability of coupling terahertz signals. We simulated the electric field distribution of the grating-coupled structure in surface and inside by using the finite difference time domain (FDTD) method. The electric field in the central area of the silicon surface can be enhanced more than 4 times compared with the non-structure silicon substrate. We also simulated the Fabry-Perot cavity in the frequency range from 0.2 THz to 0.35 THz, and the electric field in the central area of the silicon surface can be improved one time compared with the non-structure silicon substrate. In addition, the electric field distribution on the silicon surface can be changed by adjusting parameters of the grating-coupled structure. When the period of the grating is 560 mu m, the width of the gold is 187 mu m, and the thickness of the silicon substrate is 720 mu m, a 4.7 times electric field could be achieved compared with the non-structure silicon substrate at 0.27 THz and around. So, the simulation result shows that the grating-coupled structure has an obvious advantage compared with the Fabry-Perot cavity at THz coupling efficiency.

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